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"楊宜霖"

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Institution	Date	Title	Author
國立高雄師範大學	2015-08	具不同摻雜濃度之超薄絕緣層上矽晶及超薄底絕緣層金氧半場效電晶體閘極絕緣層可靠度之分析與探討	楊宜霖
國立高雄師範大學	2014-08	非平面結構金氧半場效電晶體閘極絕緣層可靠度之分析與探討	楊宜霖
國立高雄師範大學	2013-08	電阻式記憶體之低能耗製程技術開發(II)	楊宜霖
國立高雄師範大學	2012-08	Reliability Improvement of 28nm High-k/Metal Gate-Last MOSFET using Appropriate Oxygen Annealing	Yi-Lin Yang;Wenqi Zhang;Chi-Yun Cheng;Yi-Ping Huang;Pin-Tseng Chen;Chia-Wei Hsu;Li-Kong Chin;Chien-Ting Lin;Che-Hua Hsu;Chien-Ming Lai ;Wen-Kuan Yeh; 楊宜霖
國立高雄師範大學	2012-06	Reliability Improvement of 28nm High-k/Metal Gate Device by Using Oxygen Annealing	Yi-Lin Yang;Wenqi Zhang;Chi-Yun Cheng;Yi-Ping Huang;Pin-Tseng Chen;Li-Kong Chin;Chia-Wei Hsu;Wen-Kuan Yeh; 楊宜霖
國立高雄師範大學	2012	The Improvement of Reliability of High-k/Metal Gate pMOSFET Device with Various PMA Conditions	Yi-Lin Yang;Wenqi Zhang;Chi-Yun Cheng;Wen-Kuan Yeh; 楊宜霖
國立高雄師範大學	2011-11	Reliability Improvement of 28nm Gate Last High-k/Metal Gate Device with Oxygen Annealing	Y.L. Yang;Y.P. Huang;P.T. Chen;W.Q. Zhang;C.Y. Cheng;L.K. Chin;C.W. Hsu;W.K. Yeh; 楊宜霖
國立高雄師範大學	2011-10	A Proposed High Manufacturability Strain Technology for High-k/Metal Gate SiGe-SOI CMOSFET	W.K. Yeh;C.Y. Cheng;Y.L Yang;C.T. Lin;C.M. Lai;Y.W. Chen;C. H. Hsu;C.W. Yang;P.Y. Chen; 楊宜霖
國立高雄師範大學	2011-08	電阻式記憶體之低能耗製程技術開發(I)	楊宜霖
國立高雄師範大學	2011-04	The Improvement of Reliability of 28nm High-k/Metal Gate Device with Various PMA Conditions	Chi-Yun Cheng;Wen-Kuan Yeh;Yi-Lin Yang;Chia-Wei Hsu; 楊宜霖
國立高雄師範大學	2009-12	Inelastic Electron Tunneling Spectroscopy Study of Ultra-Thin TiO2/Al2O3 on GaAs	Z. Liu;X.W. (Sharon) Wang;W. Zhang;Y.L. Yang;T.P. Ma; 楊宜霖
國立臺灣大學	2009	超薄氧化層純水補償技術及氫對ONO介電層可靠度之影響	楊宜霖; Yang, Yi-Lin
國立高雄師範大學	2008-12	Charge Trapping Memory Stack with Aluminum Oxide as the Tunnel Barrier	J.F Yang;X.W. (Sharon) Wang;Y.L. Yang;T.P. Ma; 楊宜霖
國立高雄師範大學	2008-09	Effect of Strain-Temperature Stress on MOS Structure with Ultra-thin Gate Oxide	C.N. Lin;Y.L. Yang;W.T. Chen;S.C. Lin;K.C. Chuang;J.G. Hwu; 楊宜霖
國立高雄師範大學	2007-12	Investigation of Strain-Temperature Stress Effects on the Characteristics of MOS Capacitors with Ultra-thin Gate Oxides	C.N. Lin;Y.L. Yang;W.T. Chen;S.C. Lin;J.G. Hwu; 楊宜霖
國立中山大學	2007-09-07	冷軋乳化液之磨潤特性研究	楊宜霖
國立高雄師範大學	2007-06	Modeling and Characterization of Hydrogen Induced Charge Loss in Nitride Trapping Memory	Y.L. Yang;C.H. Chang;Y.H. Shih;K.Y. Hsieh;J.G. Hwu; 楊宜霖
國立高雄師範大學	2006-12	Hydrogen Eraser for Tightening VT Distribution of Nitride Trapping Memory	Y.L. Yang;C.H. Chang;Y.H. Shih;K.Y. Hsieh;J.G. Hwu; 楊宜霖
國立高雄師範大學	2006-07	Impact of Strain-Temperature Stress on Ultrathin Oxide	C.W. Tung, Y.L. Yang and J.G. Hwu; 楊宜霖
國立高雄師範大學	2004-10	Quality Improvement of Ultra-Thin Gate Oxide by Using Thermal-Growth Followed by Scanning-Frequency Anodization (SF ANO) Technique	Y.L. Yang;J.G. Hwu; 楊宜霖
國立高雄師範大學	2004-09	Growth-Then-Anodization Technique for Reliable Ultra-Thin Gate Oxides	W.J. Liao;Y.L. Yang;S.C. Chuang;J.G. Hwu; 楊宜霖

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