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Institution Date Title Author
國立成功大學 2009 Improved hydrogen gas generation rate of n-GaN photoelectrode with SiO2 protection layer on the Ohmic contacts from the electrolyte Liu, Shu-Yen; �Sheu, �Jinn-Kong; Tseng, Chun-Kai; Ye, Jhao-Cheng; Chang, K. H.; Lee, M. L.; Lai, W. C.
國立成功大學 2009 Array of GaN-based transverse junction blue light emitting diodes with regrown n-type regimes Guol,� Shi-Hao; �Huang,� H. W.; �Lin, �C. S.; �Sheu, �Jinn-Kong; �Tin,� C. J.; �Kuo,� C. H.; �Shi, �Jin-Wei
國立成功大學 2009 Asymmetric external field effects on photoluminescence efficiency in a blue (In,Ga)N quantum-well diode with an additional n -type electron reservoir layer Kenzo Fujiwara; Hirofumi Katou; Takao Inoue; �Sheu, �Jinn-Kong
國立成功大學 2008 The CL emission observation of the InGaN/GaN MQWs V shaped pits with different superlattices underlayers Lai, W. C.; Huang, Y. S.; Yen, Y. W.; �Sheu, �Jinn-Kong; Hsueh, T. H.; �Kuo,� C. H.; �Chang,� Shoou-Jinn
國立成功大學 2008 Non-lithographic nanopatterning of InGaN/GaN multiple quantum well nanopillars by focused ion beams Wu, S. E.; Hsueh, T. H.; Liu, C. P.; �Sheu, �Jinn-Kong; Lai, W. C.; �Chang,� Shoou-Jinn
國立成功大學 2007 Effect of Thermal Annealing on Ga-doped ZnO Films Prepared by Magnetron Cosputtering �Sheu, �Jinn-Kong; Shu, K. W.; Lee, M. L.; Tun, C. J.; Chi, G. C.
國立成功大學 2007 Non-alloyed Cr/Au Ohmic contacts to n-GaN Lee, M. L.; �Sheu, �Jinn-Kong; Hu, C. C.
國立成功大學 2006 Effects of thermal annealing on transparent Al-doped ZnO films deposited on p-GaN Tun,�C.�J.; �Sheu, �Jinn-Kong; Lee, M. L.; Hu, C. C.; �Hsieh,� C. �K.; Chi, G. C.
國立成功大學 2006 Applications of transparent Al-doped ZnO contact on GaN-based power LED Tun,�C.�J.; �Sheu, �Jinn-Kong; �Pong, �B.� J.; �Lee,� M.� L.; �Lee, �M.� Y.; �Hsieh,� C. �K.; Hu, C. C.; Chi,�G.�C.
國立成功大學 2005 Comparison of Low Temperature GaN/SiO2/Si3N4 as gate insulators on AlGaN/GaN Heterostructure Field Effect Transistors Kao, C. J.; Chen, M. C.; Tun, C. J.; Chi, G. C.; �Sheu, �Jinn-Kong; Lai, W. C.; �Lee,� M.� L.; Ren, F.; Pearton, S. J.

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