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教育部委託研究計畫 計畫執行:國立臺灣大學圖書館
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"aluguri rakesh"的相關文件
顯示項目 1-8 / 8 (共1頁)
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| 國立交通大學 |
2019-04-03T06:39:55Z |
Overview of Selector Devices for 3-D Stackable Cross Point RRAM Arrays
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Aluguri, Rakesh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:58Z |
One Bipolar Selector-One Resistor for Flexible Crossbar Memory Applications
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Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:50Z |
The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random access memory devices
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Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Aluguri, Rakesh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:57:08Z |
High Performance Bipolar Resistive Switching Characteristics in SiO2/ZrO2/SiO2 Tri-layer Based CBRAM Device
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Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:54:05Z |
Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al2O3 thin layer
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Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:53:36Z |
Role of Al2O3 thin layer on improving the resistive switching properties of Ta5Si3-based conductive bridge random accesses memory device
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Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:53:18Z |
Conductive bridge random access memory characteristics of SiCN based transparent device due to indium diffusion
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Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:29:44Z |
Enhanced charge storage characteristics of nickel nanocrystals embedded flash memory structures
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Ray, Sounak K.; Panda, Debashis; Aluguri, Rakesh |
顯示項目 1-8 / 8 (共1頁)
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