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机构 日期 题名 作者
國立交通大學 2014-12-08T15:46:14Z A new technique for hot carrier reliability evaluations of flash memory cell after long-term program/erase cycles Chung, SS; Yih, CM; Cheng, SM; Liang, MS
國立交通大學 2014-12-08T15:44:20Z New degradation mechanisms of width-dependent hot carrier effect in quarter-micron shallow-trench-isolated p-channel metal-oxide-semiconductor field-effect-transistors Chung, SS; Chen, SJ; Yang, WJ; Yih, CM; Yang, JJ
國立交通大學 2014-12-08T15:44:13Z Characterization of hot-hole injection induced SILC and related disturbs in flash memories Yih, CM; Ho, ZH; Liang, MS; Chung, SS
國立交通大學 2014-12-08T15:27:48Z Direct observation of the lateral nonuniform channel doping profile in submicron MOSFET's from an anomalous charge pumping measurement results Chung, SS; Cheng, SM; Lee, GH; Guo, JC
國立交通大學 2014-12-08T15:27:45Z Accurate MOS device hot carrier models for VLSI reliability simulation CHUNG, SS; YANG, JJ; SU, JS
國立交通大學 2014-12-08T15:27:35Z A numerical model for simulating MOSFET gate current degradation by considering the interface state generation Yih, CM; Chung, SS; Hsu, CCH
國立交通大學 2014-12-08T15:27:33Z A physically-based built-in Spice Poly-Si TFT model for circuit simulation and reliability evaluation Chung, SS; Chen, DC; Cheng, CT; Yeh, CF
國立交通大學 2014-12-08T15:27:25Z A new bride damage characterization technique for evaluating hot carrier reliability of flash memory cell after P/E cycles Chung, SS; Yih, CM; Cheng, SM; Liang, MS
國立交通大學 2014-12-08T15:27:23Z Performance and reliability evaluations of P-channel flash memories with different programming schemes Chung, SS; Kuo, SN; Yih, CM; Chao, TS
國立交通大學 2014-12-08T15:27:09Z Universal switched-current integrator blocks for SI filter design Chan, JL; Chung, SS

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