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Showing items 1-12 of 12  (1 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 2018-09-10T15:00:18Z Parasitic BJT versus DIBL: Floating-Body-Related Subthreshold Characteristics of SOI NMOS Device D. H. Lung;S. K. Hu;J. B. Kuo;D. Chen; D. H. Lung; S. K. Hu; J. B. Kuo; D. Chen; JAMES-B KUO
臺大學術典藏 2018-09-10T15:00:18Z Parasitic BJT versus DIBL: Floating-Body-Related Subthreshold Characteristics of SOI NMOS Device D. H. Lung;S. K. Hu;J. B. Kuo;D. Chen; D. H. Lung; S. K. Hu; J. B. Kuo; D. Chen; JAMES-B KUO
臺大學術典藏 2018-09-10T15:00:17Z Subthreshold Behavior of the SOI NMOS Device Consdiering BJT and DIBL Effects D. H. Lung;J. B. Kuo; D. H. Lung; J. B. Kuo; JAMES-B KUO
臺大學術典藏 2018-09-10T15:00:17Z Subthreshold Behavior of the SOI NMOS Device Consdiering BJT and DIBL Effects D. H. Lung;J. B. Kuo; D. H. Lung; J. B. Kuo; JAMES-B KUO
臺大學術典藏 2018-09-10T15:00:17Z Back-Gate-Baias Induced Floating-Body-Related Subthreshold Characteristics of SOI NMOS Device S. K. Hu;D. H. Lung;J. B. Kuo;D. Chen; S. K. Hu; D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO
臺大學術典藏 2018-09-10T15:00:17Z Back-Gate-Baias Induced Floating-Body-Related Subthreshold Characteristics of SOI NMOS Device S. K. Hu;D. H. Lung;J. B. Kuo;D. Chen; S. K. Hu; D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO
臺大學術典藏 2018-09-10T09:50:25Z Turn-off Transient Behavior of PD SOI NMOS Device Considering the Back-Gate Bias Effect D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO; D. H. Lung;J. B. Kuo;D. Chen
臺大學術典藏 2018-09-10T09:50:25Z Turn-off Transient Behavior of PD SOI NMOS Device Considering the Back-Gate Bias Effect D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO; D. H. Lung;J. B. Kuo;D. Chen
臺大學術典藏 2018-09-10T09:50:25Z Back-Gate Bias Effect of PD SOI NMOS Device Considering BJT D. H. Lung;J. B. Kuo; D. H. Lung; J. B. Kuo; JAMES-B KUO
臺大學術典藏 2018-09-10T09:50:25Z Back-Gate Bias Effect of PD SOI NMOS Device Considering BJT D. H. Lung;J. B. Kuo; D. H. Lung; J. B. Kuo; JAMES-B KUO
臺大學術典藏 2013-12 Turn-on Transient Behavior of PD SOI NMOS Device Considering the Back-Gate Bias Effect D. H. Lung;J. B. Kuo;D. Chen; D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO
臺大學術典藏 2013-12 Turn-on Transient Behavior of PD SOI NMOS Device Considering the Back-Gate Bias Effect D. H. Lung;J. B. Kuo;D. Chen; D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO

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