臺大學術典藏 |
2018-09-10T15:36:25Z |
A Continuous Compact Model Incorporating Higher-Order Correction for Junctionless Nanowire Tansistors with Arbitrary Doping Profiles
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C Hong;L. Yang;Q. Cheng;T. Han;J. B. Kuo;Y. Chen; C Hong; L. Yang; Q. Cheng; T. Han; J. B. Kuo; Y. Chen; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T15:36:25Z |
A Continuous Compact Model Incorporating Higher-Order Correction for Junctionless Nanowire Tansistors with Arbitrary Doping Profiles
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C Hong;L. Yang;Q. Cheng;T. Han;J. B. Kuo;Y. Chen; C Hong; L. Yang; Q. Cheng; T. Han; J. B. Kuo; Y. Chen; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T15:36:25Z |
A Nonlinear Surface-Field Compact Model for Juinctionless Nanowire MOSFET
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C. Hong;L. Yang;Q. Cheng;T. Han;J. B. Kuo;Y. Chen; C. Hong; L. Yang; Q. Cheng; T. Han; J. B. Kuo; Y. Chen; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T15:36:25Z |
A Nonlinear Surface-Field Compact Model for Juinctionless Nanowire MOSFET
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C. Hong;L. Yang;Q. Cheng;T. Han;J. B. Kuo;Y. Chen; C. Hong; L. Yang; Q. Cheng; T. Han; J. B. Kuo; Y. Chen; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T15:25:58Z |
Floating-body-correlated subthreshold behavior of SOI NMOS device considering back-gate-bias effect
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S. K. Hu;J. B. Kuo;Y. J. Chen; S. K. Hu; J. B. Kuo; Y. J. Chen; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T15:25:58Z |
Floating-body-correlated subthreshold behavior of SOI NMOS device considering back-gate-bias effect
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S. K. Hu;J. B. Kuo;Y. J. Chen; S. K. Hu; J. B. Kuo; Y. J. Chen; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T15:25:58Z |
Analysis of Subthreshold Behavior of SOI NMOS De ice Considering Back-Gate-Bias-Related Flaoting Body Effect
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S. K. Hu;J. B. Kuo; S. K. Hu; J. B. Kuo; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T15:25:58Z |
Analysis of Subthreshold Behavior of SOI NMOS De ice Considering Back-Gate-Bias-Related Flaoting Body Effect
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S. K. Hu;J. B. Kuo; S. K. Hu; J. B. Kuo; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T15:00:18Z |
Compact Modeling of 40nm Pd SOI NMOS Devices Considering Floating Body Effect
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J. B. Kuo; J. B. Kuo; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T15:00:18Z |
Compact Modeling of 40nm Pd SOI NMOS Devices Considering Floating Body Effect
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J. B. Kuo; J. B. Kuo; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T15:00:18Z |
MTCMOS low-power optimization technique (LPOT) for 1V pipelined RISC CPU circuit
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C. B. Hsu;Y. S. Hong;J. B. Kuo; C. B. Hsu; Y. S. Hong; J. B. Kuo; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T15:00:18Z |
MTCMOS low-power optimization technique (LPOT) for 1V pipelined RISC CPU circuit
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C. B. Hsu;Y. S. Hong;J. B. Kuo; C. B. Hsu; Y. S. Hong; J. B. Kuo; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T15:00:18Z |
MTCMOS Low-Power Design Technique (LPDT) for Low-Voltage Piepelined Mcoprocessor Circuit
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C. B. Hsu;J. B. Kuo; C. B. Hsu; J. B. Kuo; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T15:00:18Z |
MTCMOS Low-Power Design Technique (LPDT) for Low-Voltage Piepelined Mcoprocessor Circuit
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C. B. Hsu;J. B. Kuo; C. B. Hsu; J. B. Kuo; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T15:00:18Z |
Parasitic BJT versus DIBL: Floating-Body-Related Subthreshold Characteristics of SOI NMOS Device
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D. H. Lung;S. K. Hu;J. B. Kuo;D. Chen; D. H. Lung; S. K. Hu; J. B. Kuo; D. Chen; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T15:00:18Z |
Parasitic BJT versus DIBL: Floating-Body-Related Subthreshold Characteristics of SOI NMOS Device
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D. H. Lung;S. K. Hu;J. B. Kuo;D. Chen; D. H. Lung; S. K. Hu; J. B. Kuo; D. Chen; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T15:00:17Z |
A Surface-Field-Based Model for Nanowire MOSFETs with Spatial Variations of Doping Profiles
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Q. Cheng;C. Y. Hong;J. B. Kuo;Y. J. Chen; Q. Cheng; C. Y. Hong; J. B. Kuo; Y. J. Chen; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T15:00:17Z |
A Surface-Field-Based Model for Nanowire MOSFETs with Spatial Variations of Doping Profiles
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Q. Cheng;C. Y. Hong;J. B. Kuo;Y. J. Chen; Q. Cheng; C. Y. Hong; J. B. Kuo; Y. J. Chen; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T15:00:17Z |
Subthreshold Behavior of the SOI NMOS Device Consdiering BJT and DIBL Effects
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D. H. Lung;J. B. Kuo; D. H. Lung; J. B. Kuo; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T15:00:17Z |
Subthreshold Behavior of the SOI NMOS Device Consdiering BJT and DIBL Effects
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D. H. Lung;J. B. Kuo; D. H. Lung; J. B. Kuo; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T15:00:17Z |
Leakage Power Consumption Reduction Strategy (PCRS) Using Mixed-Vth (MVT) Cells for Low-Voltage/Low-Power SOC
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G. Lin;C. B. Hsu;J. B. Kuo; G. Lin; C. B. Hsu; J. B. Kuo; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T15:00:17Z |
Leakage Power Consumption Reduction Strategy (PCRS) Using Mixed-Vth (MVT) Cells for Low-Voltage/Low-Power SOC
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G. Lin;C. B. Hsu;J. B. Kuo; G. Lin; C. B. Hsu; J. B. Kuo; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T15:00:17Z |
Critical-path aware power consumption optimization methodology (CAPCOM) using mixed-VTH cells for low-power SOC designs
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JAMES-B KUO; J. B. Kuo; G. Lin; G. Lin;J. B. Kuo |
臺大學術典藏 |
2018-09-10T15:00:17Z |
Critical-path aware power consumption optimization methodology (CAPCOM) using mixed-VTH cells for low-power SOC designs
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JAMES-B KUO; J. B. Kuo; G. Lin; G. Lin;J. B. Kuo |
臺大學術典藏 |
2018-09-10T15:00:17Z |
Power consumption optimization methodology (PCOM) for low-power/ low-voltage 32-bit microprocessor circuit design via MTCMOS
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C. B. Hsu;J. B. Kuo; C. B. Hsu; J. B. Kuo; JAMES-B KUO |