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"jenn gwo hwu"
Showing items 101-110 of 119 (12 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T04:08:53Z |
Local thinning-induced oxide nonuniformity effect on the tunneling current of ultrathin gate oxide
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Hong, C.-C.; Chen, W.-R.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T03:44:50Z |
Effect of oxide resistance on the characterization of interface trap density in MOS structures
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Lin, J.-J.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T03:44:49Z |
Improvement in oxide thickness uniformity by repeated spike oxidation
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Hong, C.-C.; Lee, C.-Y.; Hsieh, Y.-L.; Liu, C.-C.; Fong, I.-K.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T03:44:49Z |
Degradation in metal-oxide-semiconductor structure with ultrathin gate oxide due to external compressive stress
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Hong, C.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T03:44:49Z |
Application of anodization to reoxidize silicon nitride film
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Lin, Y.-P.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T03:44:49Z |
Improvement of hot-carrier resistance and radiation hardness of nMOSFETs by irradiation-then-anneal treatments
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Chang-Liao, K.-S.;Hwu, J.-G.; Chang-Liao, K.-S.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T03:44:48Z |
Ultra-thin gate oxides prepared by alternating current anodization of silicon followed by rapid thermal anneal
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Chen, Y.-C.; Lee, C.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T03:44:48Z |
Stress effect on the kinetics of silicon thermal oxidation
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Yen, J.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2011 |
Comprehensive study on negative capacitance effect observed in MOS(n) capacitors with ultrathin gate oxides
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Chang, S.-J.;Hwu, J.-G.; Chang, S.-J.; Hwu, J.-G.; JENN-GWO HWU |
| 國立高雄師範大學 |
2005 |
The Effect of Photon Illumination in Rapid Thermal Processing on the Characteristics of MOS Structures with Ultra-thin Oxides Examined by Substrate Injection
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Chia-Hong Huang;Jenn-Gwo Hwu; 黃嘉宏 |
Showing items 101-110 of 119 (12 Page(s) Totally)
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