| 臺大學術典藏 |
2018-09-10T04:08:53Z |
Local thinning-induced oxide nonuniformity effect on the tunneling current of ultrathin gate oxide
|
Hong, C.-C.; Chen, W.-R.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T03:44:50Z |
Effect of oxide resistance on the characterization of interface trap density in MOS structures
|
Lin, J.-J.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T03:44:49Z |
Improvement in oxide thickness uniformity by repeated spike oxidation
|
Hong, C.-C.; Lee, C.-Y.; Hsieh, Y.-L.; Liu, C.-C.; Fong, I.-K.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T03:44:49Z |
Degradation in metal-oxide-semiconductor structure with ultrathin gate oxide due to external compressive stress
|
Hong, C.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T03:44:49Z |
Application of anodization to reoxidize silicon nitride film
|
Lin, Y.-P.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T03:44:49Z |
Improvement of hot-carrier resistance and radiation hardness of nMOSFETs by irradiation-then-anneal treatments
|
Chang-Liao, K.-S.;Hwu, J.-G.; Chang-Liao, K.-S.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T03:44:48Z |
Ultra-thin gate oxides prepared by alternating current anodization of silicon followed by rapid thermal anneal
|
Chen, Y.-C.; Lee, C.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T03:44:48Z |
Stress effect on the kinetics of silicon thermal oxidation
|
Yen, J.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2011 |
Comprehensive study on negative capacitance effect observed in MOS(n) capacitors with ultrathin gate oxides
|
Chang, S.-J.;Hwu, J.-G.; Chang, S.-J.; Hwu, J.-G.; JENN-GWO HWU |
| 國立高雄師範大學 |
2005 |
The Effect of Photon Illumination in Rapid Thermal Processing on the Characteristics of MOS Structures with Ultra-thin Oxides Examined by Substrate Injection
|
Chia-Hong Huang;Jenn-Gwo Hwu; 黃嘉宏 |
| 國立高雄師範大學 |
2002 |
Effect of Mechanical Stress on the Characteristics of Silicon Thermal Oxides
|
Chia-Hong Huang;Jui-Yuan Yen;Jenn-Gwo Hwu; 黃嘉宏 |
| 國立高雄師範大學 |
2001 |
Breakdown Characteristics of Ultra-thin Gate Oxide ( < 4nm ) in MOS Structure Subjected Substrate Injection
|
Chia-Hong Huang;Jenn-Gwo Hwu; 黃嘉宏 |
| 國立高雄師範大學 |
2001 |
Anomalous Low-Voltage Tunneling Current ( LVTC ) Characteristics of Ultra-Thin Gate Oxide ( ~2nm ) after High Field Stress
|
Chia-Hong Huang;Jenn-Gwo Hwu; 黃嘉宏 |
| 臺大學術典藏 |
2001 |
Anomalous low-voltage tunneling current characteristics of ultrathin gate oxide (∼2 nm) after high-field stress
|
JENN-GWO HWU; Hwu, J.-G.; Huang, C.-H. |
| 臺大學術典藏 |
2001 |
An on-chip temperature sensor by utilizing a MOS tunneling diode
|
Shih, Y.-H.; Hwu, J.-G.; JENN-GWO HWU |
| 國立高雄師範大學 |
2000 |
Enhancement in Soft Breakdown Occurrence on Ultra-thin Gate Oxides Caused by Photon Effect in Rapid Thermal Post Oxidation Annealing
|
Chia-Hong Huang;Jenn-Gwo Hwu; 黃嘉宏 |
| 國立高雄師範大學 |
2000 |
Role of Interface Trap Generation in the Low-Voltage Tunneling Current ( LVTC ) Characteristics of Ultra-Thin Gate Oxide ( ~2nm ) under High Field Stress
|
Chia-Hong Huang;Jenn-Gwo Hwu; 黃嘉宏 |
| 國立高雄師範大學 |
1999 |
The Breakdown Properties of Front- and Back-side Post Oxidation Annealed( POA ) Ultrathin Gate Oxide ( <3nm ) under High Field Stress
|
Chia-Hong Huang;Jenn-Gwo Hwu; 黃嘉宏 |
| 臺大學術典藏 |
1996 |
Reliable fluorinated thin gate oxides prepared by liquid phase deposition following rapid thermal process
|
JENN-GWO HWU; Hwu, J.-G.; Lu, W.-S.; Lu, W.-S.;Hwu, J.-G. |
