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机构 日期 题名 作者
臺大學術典藏 2018-09-10T07:29:07Z Effect of tensile stress on mos capacitors with ultra-thin gate oxide Chen, H.-L.;Lee, C.-J.;Hwu, J.-G.; Chen, H.-L.; Lee, C.-J.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T07:29:07Z Comprehensive study on the deep depletion capacitance-voltage behavior for metal-oxide-semiconductor capacitor with ultrathin oxides Cheng, J.-Y.;Huang, C.-T.;Hwu, J.-G.; Cheng, J.-Y.; Huang, C.-T.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T07:29:07Z Comparison of lateral non-uniformity phenomena between HfO2 and SiO2 from magnified C-V curves in inversion region Cheng, J.Y.;Huang, C.T.;Lu, H.T.;Hwu, J.G.; Cheng, J.Y.; Huang, C.T.; Lu, H.T.; Hwu, J.G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T07:29:07Z Characterization of the electrostatic discharge induced interface traps in metal-oxide-semiconductor field-effect transistors Tseng, J.-C.;Hwu, J.-G.; Tseng, J.-C.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T07:29:07Z Low temperature tandem aluminum oxides prepared by DAC-ANO compensation in nitric acid Yang, C.-Y.;Hwu, J.-G.; Yang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T07:29:06Z Trapping characteristics of Al2O3/HfO 2/SiO1-2 stack structure prepared by low temperature in situ oxidation in dc sputtering Chang, C.-H.; Hwu, J.-G.; JENN-GWO HWU; Chang, C.-H.;Hwu, J.-G.
臺大學術典藏 2018-09-10T07:29:06Z Thin silicon oxide films on N-type 4H-SiC prepared by scanning frequency anodization method Chuang, K.-C.;Hwu, J.-G.; Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T06:57:01Z Edge-illuminated metal-oxide-semiconductor (MOS) solar cells with oxides prepared by liquid phase deposition method Lee, Kuo-Chung; Lin, Jin-Sheng; Hwu, Jenn-Gwo; JENN-GWO HWU
臺大學術典藏 2018-09-10T06:57:01Z Application of anodization followed by rapid thermal treatment to thin gate oxide growth Jeng, Ming-Jer; Hwu, Jenn-Gwo; JENN-GWO HWU
臺大學術典藏 2018-09-10T06:57:01Z The radiation hardness property of dry oxide grown by postoxidation cooling in oxygen ambient Hwu, J.-G.;Fu, S.-L.; Hwu, J.-G.; Fu, S.-L.; JENN-GWO HWU

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