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"jenn gwo hwu"的相关文件
显示项目 61-70 / 119 (共12页) << < 2 3 4 5 6 7 8 9 10 11 > >> 每页显示[10|25|50]项目
| 臺大學術典藏 |
2018-09-10T07:29:07Z |
Effect of tensile stress on mos capacitors with ultra-thin gate oxide
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Chen, H.-L.;Lee, C.-J.;Hwu, J.-G.; Chen, H.-L.; Lee, C.-J.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T07:29:07Z |
Comprehensive study on the deep depletion capacitance-voltage behavior for metal-oxide-semiconductor capacitor with ultrathin oxides
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Cheng, J.-Y.;Huang, C.-T.;Hwu, J.-G.; Cheng, J.-Y.; Huang, C.-T.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T07:29:07Z |
Comparison of lateral non-uniformity phenomena between HfO2 and SiO2 from magnified C-V curves in inversion region
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Cheng, J.Y.;Huang, C.T.;Lu, H.T.;Hwu, J.G.; Cheng, J.Y.; Huang, C.T.; Lu, H.T.; Hwu, J.G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T07:29:07Z |
Characterization of the electrostatic discharge induced interface traps in metal-oxide-semiconductor field-effect transistors
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Tseng, J.-C.;Hwu, J.-G.; Tseng, J.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T07:29:07Z |
Low temperature tandem aluminum oxides prepared by DAC-ANO compensation in nitric acid
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Yang, C.-Y.;Hwu, J.-G.; Yang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T07:29:06Z |
Trapping characteristics of Al2O3/HfO 2/SiO1-2 stack structure prepared by low temperature in situ oxidation in dc sputtering
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Chang, C.-H.; Hwu, J.-G.; JENN-GWO HWU; Chang, C.-H.;Hwu, J.-G. |
| 臺大學術典藏 |
2018-09-10T07:29:06Z |
Thin silicon oxide films on N-type 4H-SiC prepared by scanning frequency anodization method
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Chuang, K.-C.;Hwu, J.-G.; Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:01Z |
Edge-illuminated metal-oxide-semiconductor (MOS) solar cells with oxides prepared by liquid phase deposition method
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Lee, Kuo-Chung; Lin, Jin-Sheng; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:01Z |
Application of anodization followed by rapid thermal treatment to thin gate oxide growth
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Jeng, Ming-Jer; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:01Z |
The radiation hardness property of dry oxide grown by postoxidation cooling in oxygen ambient
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Hwu, J.-G.;Fu, S.-L.; Hwu, J.-G.; Fu, S.-L.; JENN-GWO HWU |
显示项目 61-70 / 119 (共12页) << < 2 3 4 5 6 7 8 9 10 11 > >> 每页显示[10|25|50]项目
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