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"jone f"的相关文件
显示项目 1-6 / 6 (共1页)
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| 國立成功大學 |
2022-04 |
Simulation-Based Study of Low Minimum Operating Voltage SRAM With Inserted-Oxide FinFETs and Gate-All-Around Transistors
|
Wu;Yi-Ting;Ding;Fei;Chiang;Meng-Hsueh;Chen;Jone, F.;Liu;King, Tsu-Jae |
| 國立成功大學 |
2021-11 |
Simulation-Based Study of High-Permittivity Inserted-Oxide FinFET With Low-Permittivity Inner Spacers
|
Wu;Yi-Ting;Chiang;Meng-Hsueh;Chen;Jone, F.;Liu;King, Tsu-Jae |
| 國立成功大學 |
2021-05-1 |
Investigating the Photodetectors and pH Sensors of Two-Dimensional MoS2 with Different Substrates
|
Chang;Sheng-Po;Chen;Tzu-Hsin;Liou;Guan-Yuan;Huang;Wei-Lun;Lai;Wei-Chih;Chang;Shoou-Jinn;Chen;Jone, F. |
| 國立成功大學 |
2019-04 |
Simulation-Based Study of High-Density SRAM Voltage Scaling Enabled by Inserted-Oxide FinFET Technology
|
Wu;Yi-Ting;Ding;Fei;Connelly;Daniel;Chiang;Meng-Hsueh;Chen;Jone, F.;Liu;King, Tsu-Jae |
| 國立成功大學 |
2018-12 |
Investigation of characteristics and hot-carrier reliability of high-voltage MOS transistors with various doping concentrations in the drift region
|
Tsai;Yen-Lin;Chen;Jone, F.;Shen;Shang-Feng;Hsu;Hao-Tang;Kao;Chia-Yu;Chang;Kuei-Fen;Hwang;Hann-Ping |
| 國立成功大學 |
2017-10 |
Simulation-Based Study of Hybrid Fin/Planar LDMOS Design for FinFET-Based System-on-Chip Technology
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Wu;Yi-Ting;Ding;Fei;Connelly;Daniel;Zheng;Peng;Chiang;Meng-Hsueh;Chen;Jone, F.;Liu;King, Tsu-Jae |
显示项目 1-6 / 6 (共1页)
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