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| 國立交通大學 |
2014-12-08T15:48:55Z |
A novel process to form cobalt silicided p(+) poly-Si gates by BF2+ implantation into bilayered CoSi/a-Si films and subsequent anneal
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Lai, WK; Liu, HW; Juang, MH; Chen, NC; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:47:36Z |
Effects of CoSi2 on p(+) polysilicon gates fabricated by BF2+ implantation into CoSi amorphous Si bilayers
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Cheng, HC; Lai, WK; Liu, HW; Juang, MH |
| 國立交通大學 |
2014-12-08T15:46:51Z |
Formation of silicided shallow p(+) n junctions by BF2+ implantation into thin amorphous-Si or Ni/amorphous-Si films on Si substrates and subsequent Ni silicidation
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Juang, MH; Hu, MC; Yang, CJ |
| 國立交通大學 |
2014-12-08T15:46:27Z |
Effects of rapid thermal annealing on cobalt silicided p(+) poly-Si gates fabricated by BF2+ implantation into bilayered CoSi/a-Si films
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Lai, WK; Liu, HW; Juang, MH; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:46:12Z |
Suppression of boron penetration for p(+) stacked poly-Si gates by using inductively coupled N-2 plasma treatment
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Cheng, HC; Lai, WK; Hwang, CC; Juang, MH; Chu, SC; Liu, TF |
| 國立交通大學 |
2014-12-08T15:44:34Z |
Effect of rapid thermal annealed TiN barrier layer on BST capacitors prepared by RF magnetron cosputter system at low substrate temperatures
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Hwang, CC; Jaing, CC; Lai, MJ; Chen, JS; Huang, S; Juang, MH; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:44:31Z |
Low-temperature process to improve the leakage current of (Ba, Sr)TiO3 films on Pt/TiN/Ti/Si substrates
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Hwang, CC; Lai, MJ; Jaing, CC; Chen, JS; Huang, S; Juang, MH; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:44:19Z |
Effect of rapid-thermal-annealed TiN barrier layer on the Pt/BST/Pt capacitors prepared by RF magnetron co-sputter technique at low substrate temperature
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Hwang, CC; Juang, MH; Lai, MJ; Jaing, CC; Chen, JS; Huang, S; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:41:20Z |
Effects of post-oxygen plasma treatment on Pt/(Ba,Sr)TiO3/Pt capacitors at low substrate temperatures
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Shye, DC; Hwang, CC; Lai, MJ; Jaing, CC; Chen, JS; Huang, S; Juang, MH; Chiou, BS; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:38:50Z |
Fabrication of trench-gate power MOSFETs by using a dual doped body region
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Juang, MH; Chen, WT; Ou-Yang, CI; Jang, SL; Lin, MJ; Cheng, HC |
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