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机构	日期	题名	作者
國立高雄師範大學	1996	A new functional AlGaAs/InGaAs/GaAs heterostructure-emitter bipolar transistors (HEHBT's)	Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;H. R. Chen;Shiou-Ying Cheng;Wei-Chou Wang;Po-Hung Lin;Jing-Yuh Chen; 蔡榮輝
國立高雄師範大學	1996	Metal-insultor-semiconductor (MIS)-like field-effect-transistor for power system application	Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Wen-Shiung Lour;Kun-Wei Lin;Chin-Chuan Cheng; 蔡榮輝
國立高雄師範大學	1996	High current drivability d-doping sheet InGaP/GaAs heterostructure bipolar transistor for power system applications	Jung-Hui Tsai;Wen-Chau Liu;Wen-Shiung Lour;Kun-Wei Lin;Chin-Chuan Cheng,; 蔡榮輝
國立高雄師範大學	1996	Investigation of InGaP/GaAs multiple-differential-resistance (NDR) device prepared by MOCVD	Jung-Hui Tsai;Wen-Chau Liu;Kong-Beng Thei;Chin-Chuan Cheng;Kun-Wei Lin;H. R. Chen,; 蔡榮輝
國立高雄師範大學	1996	Characteristics of InGaP/GaAs single-heterojunction bipolar transistor with zero potential spike by d-doped sheet	Jung-Hui Tsai;Wen-Shiung Lour;Wen-Chau Liu;H. R. Chen; 蔡榮輝
國立高雄師範大學	1996	A new multiple negative-differential-resistance (MNDR) device with AlGaAs/step-graded InxGa1-xAs quantum well/GaAs structure	Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Chin-Chuan Cheng;Kun-Wei Lin; 蔡榮輝
國立高雄師範大學	1996	A new heterostructure-base bipolar transistor with multiple negative-differential-resistance	Jung-Hui Tsai;Wen-Chau Liu;Wen-Shiung Lour;Lih-Wen Laih;Chin-Chuan Cheng;Kun-Wei Lin; 蔡榮輝
國立高雄師範大學	1996	A new InGaP/GaAs DHBT with delta-sheet and application to power transistors	Jung-Hui Tsai;Wen-Shiung Lour;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1996	High-performance InGaP/GaAs single-heterojunction bipolar transistor by d-doped sheet	Jung-Hui Tsai;Wen-Shiung Lour;Wen-Chau Liu;H. R. Chen; 蔡榮輝
國立高雄師範大學	1996	On the InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with multiple S-shaped negative-differential-resistance	Jung-Hui Tsai;Wen-Chau Liu;Kong-Beng Thei;Kun-Wei Lin;Chin-Chuan Cheng;H. R. Chen; 蔡榮輝
國立高雄師範大學	1995-01	Characteristics of metal-insulated-semiconductor (MIS) like In0.2Ga0.8As/GaAs doped-channel structure	Jung-Hui Tsai;Lih-Wen Laih;Wen-Shiung Lour;Wen-Chau Liu;Cheng-Zu Wu;Kong-Beng Thei;Rong-Chau Liu; 蔡榮輝
國立高雄師範大學	1995	Characteristics of a GaAs-InGaAs quantum-well resonant-tunneling switch	Jung-Hui Tsai;Der-Feng Guo;Lih-Wen Laih;Wen-Chau Liu;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1995	Observation of the anomalous current-voltage characteristics of GaAs/n+-InGaAs/GaAs doped-channel structure	Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Wei-Chou Hsu;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學	1995	Performances enhancement in a metal-insulator-semiconductor-like pseudomorphic transistor by utilizing n--GaAs/n+-In0.2Ga0.8As two-layer structure	Jung-Hui Tsai;Wen-Chau Liu;Wei-Chou Hsu;Lih-Wen Laih;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學	1995	Heterostructure confinement effect on the negative-differential-resistance (NDR) bipolar transistor	Jung-Hui Tsai;Wen-Chau Liu;Wei-Chou Hsu;Lih-Wen Laih;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學	1995	MBE grown GaAs tri-step doping channel camel-gate FET	Jung-Hui Tsai;Wen-Chau Liu;Wen-Shiung Lour;Lih-Wen Laih;Kong-Beng Thei;Cheng-Zu Wu;Rong-Chau Liu; 蔡榮輝
國立高雄師範大學	1995	Negative-differential-resistorance (NDR) field-effect transistor with n--GaAs/n+-InGaAs/i-GaAs doping-channel structure	Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Cheng-Zu Wu;Kong-Beng Thei;Wen-Shiung Lour;Rong-Chau Liu; 蔡榮輝
國立高雄師範大學	1995	Application of InGaAs-GaAs delta-doped quantum wells to bolk-barrier switching devices	Jung-Hui Tsai;Der-Feng Guo;Lih-Wen Laih;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1995	Fabrication and analysis of camel-gate field-effect transistors (CAMFET’s) with active doping channel profiles	Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Kong-Beng Thei;Cheng-Zu Wu;Wen-Shiung Lour;Rong-Chau Liu; 蔡榮輝
國立高雄師範大學	1995	Linear and enhanced transconductance using high-medium-low doping channel	Jung-Hui Tsai;Wen-Shiung Lour;Wen-Chau Liu;Lih-Wen Laih; 蔡榮輝
國立高雄師範大學	1995	GaAs-InGaAs doping-channel negative-differential-resistance field-effect transistor (NDRFET)	Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Kong-Beng Thei;Cheng-Zu Wu;Wen-Shiung Lour;Yuan-Tzu Liu;Rong-Chau Liu; 蔡榮輝
國立高雄師範大學	1995	Three-terminal switching device with InGaAs/GaAs/InGaAs hole confinement layer	Jung-Hui Tsai;Wen-Shiung Lour;Wen-Chau Liu;Lih-Wen Laih; 蔡榮輝
國立高雄師範大學	1995	GaAs tristep low-low doping channel field effect transistor	Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Kong-Beng Thei;Cheng-Zu Wu;Wen-Shiung Lour;Yuan-Tzu Liu;Rong-Chau Liu; 蔡榮輝
國立高雄師範大學	1994	Investigation of InGaAs/GaAs doped-channel MIS-like pseudomorphic transistor	Jung-Hui Tsai;Wen-Chau Liu;Wei-Chou Hsu;Lih-Wen Laih;Wen-Shiung Lour; 蔡榮輝

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