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显示项目 76-100 / 129 (共6页)
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机构 日期 题名 作者
國立交通大學 2014-12-08T15:26:21Z MOS-bounded diodes for on-chip ESD protection in a 0.15-mu m shallow-trench-isolation salicided CMOS process Ker, MD; Lin, KH; Chuang, CH
國立交通大學 2014-12-08T15:26:21Z Evaluation on ESD robustness of UPS diode and TFT device by transmission line pulsing (TLP) technique Ker, MD; Tseng, TK; Yang, SC; Shih, A; Tsai, YM
國立交通大學 2014-12-08T15:26:15Z Design of 2.5V/5V mixed-voltage CMOS I/O buffer with only thin oxide device and dynamic N-well bias circuit Ker, MD; Tsai, CS
國立交通大學 2014-12-08T15:26:14Z ESD protection design for mixed-voltage-tolerant I/O buffers with substrate-triggered technique Ker, MD; Hsu, HC
國立交通大學 2014-12-08T15:26:13Z Test structure and verification on the MOSFET under bond pad for area-efficient I/O layout in high-pin-count SOCIC's Ker, MD; Peng, JJ; Jiang, HC
國立交通大學 2014-12-08T15:26:09Z A novel LC-Tank ESD protection design for giga-Hz RF circuits Ker, MD; Chou, CI; Lee, CM
國立交通大學 2014-12-08T15:26:04Z Interference of esd protection diodes on RF performance in GIGA-HZ RF circuits Ker, MD; Lee, CM
國立交通大學 2014-12-08T15:25:56Z Native-NMOS-triggered SCR (NANSCR) for ESD protection in 0.13-mu m CMOS integrated circuits Ker, MD; Hsu, KC
國立交通大學 2014-12-08T15:25:51Z Correlation between transmission-line-pulsing I-V curve and human-body-model ESD level on low temperature poly-Si TFT devices Ker, MD; Hou, CL; Chang, CY; Chu, FT
國立交通大學 2014-12-08T15:25:51Z Layout optimization on low-voltage-triggered PNP devices for ESD protection in mixed-voltage I/O interfaces Chang, WJ; Ker, MD
國立交通大學 2014-12-08T15:25:51Z Low-voltage-triggered PNP devices for ESD protection design in mixed-voltage I/O interface with over-VDD and under-VSS signal levels Ker, MD; Chang, WJ; Lo, WY
國立交通大學 2014-12-08T15:25:51Z Design to avoid the over-gate-driven effect on ESD protection circuits in deep-submicron CMOS processes Ker, MD; Chen, WY
國立交通大學 2014-12-08T15:25:49Z Characterization on ESD devices with test structures in silicon germanium RF BiCMOS process Ker, MD; Wu, WL; Chang, CY
國立交通大學 2014-12-08T15:25:49Z Test structures to verify ESD robustness of on-glass devices in UPS technology Ker, MD; Deng, CK; Yang, SC; Tasi, YM
國立交通大學 2014-12-08T15:25:47Z ESD protection design for broadband RF circuits with decreasing-size distributed protection scheme Ker, MD; Kuo, BJ
國立交通大學 2014-12-08T15:25:44Z A new output buffer for 3.3-V PCI-X application in a 0.13-mu m 1/2.5-V Chen, SL; Ker, MD
國立交通大學 2014-12-08T15:25:43Z Transient-induced latchup in CMOS technology: Physical mechanism and device simulation Ker, MD; Hsu, SF
國立交通大學 2014-12-08T15:25:38Z Self-substrate-triggered technique to enhance turn-on uniformity of multi-finger ESD protection devices Ker, MD; Chen, JH; Hsu, KC
國立交通大學 2014-12-08T15:25:38Z Methods to improve machine-model ESD robustness of NMOS devices in fully-salicided CMOS technology Hsu, HC; Chen, CM; Ker, MD
國立交通大學 2014-12-08T15:25:32Z ESD protection structure with embedded high-voltage p-type SCR for automotive vacuum-fluorescent-display (VFD) applications Ker, MD; Chang, WJ; Yang, M; Chen, CC; Chan, MC; Shieh, WT; Yen, KL
國立交通大學 2014-12-08T15:25:24Z New curvature-compensation technique for CMOS bandgap reference with sub-1-v operation Ker, MD; Chen, JS; Chu, CY
國立交通大學 2014-12-08T15:25:23Z Design on mixed-voltage I/O buffer with blocking NMOS and dynamic gate-controlled circuit for high-voltage-tolerant applications Ker, MD; Chen, SL; Tsai, CS
國立交通大學 2014-12-08T15:25:22Z Evaluation on efficient measurement setup for transient-induced latchup with bi-polar trigger Ker, MD; Hsu, SF
國立交通大學 2014-12-08T15:25:22Z Impact of MOSFET gate-oxide reliability on CMOS operational amplifiers in a 130-nm low-voltage CMOS process Chen, JS; Ker, MD
國立交通大學 2014-12-08T15:25:22Z Design on power-rail ESD clamp circuit for 3.3-V I/O interface by using only 1-V/2.5-V low-voltage devices in a 130-nm CMOS process Ker, MD; Chen, WY; Hsu, KC

显示项目 76-100 / 129 (共6页)
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