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教育部委託研究計畫      計畫執行:國立臺灣大學圖書館
 
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機構 日期 題名 作者
國立交通大學 2014-12-08T15:27:05Z New diode string design with very low leakage current for using in power supply ESD clamp circuits Ker, MD; Lo, WY; Chang, HH
國立交通大學 2014-12-08T15:26:55Z Investigation on ESD robustness of CMOS devices in a 1.8-v 0.15-mu m partially-depleted SOI salicide CMOS technology Ker, MD; Hong, KK; Chen, TY; Tang, H; Huang, SC; Chen, SS; Huang, CT; Wang, MC; Loh, YT
國立交通大學 2014-12-08T15:26:55Z ESD protection strategy for sub-quarter-micron CMOS technology: Gate-driven design versus substrate-triggered design Chen, TY; Ker, MD
國立交通大學 2014-12-08T15:26:55Z Level shifters for high-speed 1-v to 3.3-v interfaces in a 0.13-mu m Cu-Interconnection/Low-k CMOS technology Wang, WT; Ker, MD; Chiang, MC; Chen, CH
國立交通大學 2014-12-08T15:26:51Z Design on ESD protection circuit with very low and constant input capacitance Chen, TY; Ker, MD
國立交通大學 2014-12-08T15:26:51Z Compact layout rule extraction for latchup prevention in a 0.25-mu m shallow-trench-isolation silicided bulk CMOS process Ker, MD; Lo, WY; Chen, TY; Tang, H; Chen, SS; Wang, MC
國立交通大學 2014-12-08T15:26:50Z Automatic methodology for placing the guard rings into chip layout to prevent latchup in CMOS IC's Ker, MD; Jiang, HC; Peng, JJ; Shieh, TL
國立交通大學 2014-12-08T15:26:50Z ESD test methods on integrated circuits: An overview Ker, MD; Peng, JH; Jiang, HC
國立交通大學 2014-12-08T15:26:45Z Whole-chip ESD protection strategy for CMOS integrated circuits in nanotechnology Ker, MD; Jiang, HC
國立交通大學 2014-12-08T15:26:45Z ESD implantations in 0.18-mu m salicided CMOS technology for on-chip ESD protection with layout consideration Ker, MD; Chuang, CH
國立交通大學 2014-12-08T15:26:45Z Novel diode structures and ESD protection circuits in a 1.8-V 0.15-mu m partially-depleted SOI salicided CMOS process Ker, MD; Hung, KK; Tang, HTH; Huang, SC; Chen, SS; Wang, MC
國立交通大學 2014-12-08T15:26:43Z Layout design on multi-finger MOSFET for on-chip ESD protection circuits in a 0.18-mu m salicided CMOS process Ker, MD; Chuang, CH; Lo, WY
國立交通大學 2014-12-08T15:26:38Z ESD protection circuits with novel MOS-bounded diode structures Ker, MD; Chuang, CH
國立交通大學 2014-12-08T15:26:38Z Latchup current self-stop circuit for whole-chip latchup prevention in bulk CMOS integrated circuits Peng, JJ; Ker, MD; Jiang, HC
國立交通大學 2014-12-08T15:26:37Z On-chip ESD protection circuit design with novel substrate-triggered SCR device in sub-quarter-micron CMOS process Ker, MD; Hsu, KC
國立交通大學 2014-12-08T15:26:36Z ESD protection design to overcome internal damages on interface circuits of CMOS IC with multiple separated power pins Ker, MD; Chang, CY; Chang, YS
國立交通大學 2014-12-08T15:26:36Z Design of negative charge pump circuit with polysilicon diodes in a 0.25-mu m CMOS process Ker, MD; Chang, CY; Jiang, HC
國立交通大學 2014-12-08T15:26:35Z Novel ESD implantation for sub-quarter-micron CMOS technology with enhanced machine-model ESD robustness Ker, MD; Hsu, HC; Peng, JH
國立交通大學 2014-12-08T15:26:34Z ESD protection design for mixed-voltage I/O circuit with substrate-triggered technique in sub-quarter-micron CMOS process Ker, MD; Chuang, CH; Hsu, KC; Lo, WY
國立交通大學 2014-12-08T15:26:31Z ESD protection design for 900-MHz RF receiver with 8-kV HBM ESD robustness Ker, MD; Lo, WY; Lee, CM; Chen, CP; Kao, HS
國立交通大學 2014-12-08T15:26:31Z ESD protection design for 900-MHz RF receiver with 8-kV HBM ESD robustness Ker, MD; Lo, WY; Lee, CM; Chen, CP; Kao, HS
國立交通大學 2014-12-08T15:26:29Z Complementary substrate-triggered SCR devices for on-chip ESD protection circuits Ker, MD; Hsu, KC
國立交通大學 2014-12-08T15:26:28Z Failure analysis of ESD damage in a high-voltage driver IC and the effective ESD protection solution Ker, MD; Peng, JJ; Jiang, HC
國立交通大學 2014-12-08T15:26:23Z Electrostatic discharge implantation to improve machine-model ESD robustness of stacked NMOS in mixed-voltage I/O interface circuits Ker, MD; Hsu, HC; Peng, JJ
國立交通大學 2014-12-08T15:26:22Z Novel electrostatic discharge protection design for nanoelectronics in nanoscale CMOS technology Ker, MD; Tseng, TK

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