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机构 日期 题名 作者
國立交通大學 2020-05-15 Berezinskii-Kosterlitz-Thouless transition in an Al superconducting nanofilm grown on GaAs by molecular beam epitaxy Liang, Chi-Te; Chow, Lee; Lin, Sheng-Di; Patel, Dinesh K.; Yeh, Ching-Chen; Chang, Chau-Shing; Kumar, Ankit; Wu, Bi-Yi; Fan, Yen-Ting; Su, Guan-Ming
國立交通大學 2020-02-02T23:54:27Z Topological Transition in a 3nm Thick Al Film Grown by Molecular Beam Epitaxy Kumar, Ankit; Su, Guan-Ming; Chang, Chau-Shing; Yeh, Ching-Chen; Wu, Bi-Yi; Patel, Dinesh K.; Fan, Yen-Ting; Lin, Sheng-Di; Chow, Lee; Liang, Chi-Te
亞洲大學 201310 Effect of Trench Depth and Trench Angle in a High Voltage Polyflanked-Super junction MOSFET Kumar, Vijay;Srinat, Grama;Shreyas, Grama Srinath;Nidhi, Karuna;Nidhi, Karuna;Agarw, Neelam;Agarwal, Neelam;Kumar, Ankit;Kumar, Ankit;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming;Mri, Aryadeep;Mrinal, Aryadeep
亞洲大學 201310 Design of a low on resistance high voltage (<100V) novel 3D NLDMOS with side STI and single P-top layer based on 0.18um BCD Process Technology Kumar, Ankit;Kumar, Ankit;Yulia, Emita;Hapsari, Emita Yulia;Kuma, Vasanth;Kumar, Vasanth;Mri, Aryadeep;Mrinal, Aryadeep;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming;Ningar, Vivek;Ningaraju, Vivek
亞洲大學 2013-10 Effect of Trench Depth and Trench Angle in a High Voltage Polyflanked-Super junction MOSFET Kumar, Vijay;Srinat, Grama;Shreyas, Grama Srinath;Nidhi, Karuna;Nidhi, Karuna;Agarw, Neelam;Agarwal, Neelam;Kumar, Ankit;Kumar, Ankit;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming;Mri, Aryadeep;Mrinal, Aryadeep

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