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Showing items 1-5 of 5 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T05:59:53Z |
Evolution of RESET current and filament morphology in low-power HfO2 unipolar resistive switching memory
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Hou, Tuo-Hung; Lin, Kuan-Liang; Shieh, Jiann; Lin, Jun-Hung; Chou, Cheng-Tung; Lee, Yao-Jen |
| 國立交通大學 |
2019-04-02T05:58:49Z |
Electrode dependence of filament formation in HfO2 resistive-switching memory
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Lin, Kuan-Liang; Hou, Tuo-Hung; Shieh, Jiann; Lin, Jun-Hung; Chou, Cheng-Tung; Lee, Yao-Jen |
| 國立交通大學 |
2014-12-08T15:29:52Z |
Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni Electrode
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Lin, Kuan-Liang; Hou, Tuo-Hung; Lee, Yao-Jen; Chang, Jhe-Wei; Lin, Jun-Hung; Shieh, Jiann; Chou, Cheng-Tung; Lei, Tan-Fu; Chang, Wen-Hsiung; Jang, Wen-Yueh; Lin, Chen-Hsi |
| 國立交通大學 |
2014-12-08T15:11:55Z |
Evolution of RESET current and filament morphology in low-power HfO(2) unipolar resistive switching memory
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Hou, Tuo-Hung; Lin, Kuan-Liang; Shieh, Jiann; Lin, Jun-Hung; Chou, Cheng-Tung; Lee, Yao-Jen |
| 國立交通大學 |
2014-12-08T15:11:44Z |
Electrode dependence of filament formation in HfO(2) resistive-switching memory
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Lin, Kuan-Liang; Hou, Tuo-Hung; Shieh, Jiann; Lin, Jun-Hung; Chou, Cheng-Tung; Lee, Yao-Jen |
Showing items 1-5 of 5 (1 Page(s) Totally)
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