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Showing items 1-5 of 5 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:03:44Z |
CALCULATION OF HOLE MOBILITY IN DOPED SIGE ALLOYS USING A MONTE-CARLO METHOD WITH A BOND ORBITAL BAND-STRUCTURE
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LIOU, TS; WANG, TH; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:19Z |
CALCULATION OF THE STRUCTURAL DEPENDENCE OF INFRARED-ABSORPTION IN P-TYPE STRAINED-LAYER SIGE/SI QUANTUM-WELLS
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LIOU, TS; WANG, TH; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:13Z |
ABRUPTNESS OF GE COMPOSITION AT THE SI/SIGE INTERFACE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
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TSAI, WC; CHANG, CY; JUNG, TG; LIOU, TS; HUANG, GW; CHANG, TC; CHEN, LP; LIN, HC |
| 國立交通大學 |
2014-12-08T15:02:57Z |
Analysis of high-field hole transport characteristics in Si1-xGex alloys with a bond orbital band structure
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Liou, TS; Wang, TH; Chang, CY |
| 國立交通大學 |
2014-12-08T15:01:15Z |
Conditional expectation for evaluation of risk groundwater flow and solute transport: one-dimensional analysis
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Liou, TS; Yeh, HD |
Showing items 1-5 of 5 (1 Page(s) Totally)
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