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机构 日期 题名 作者
國立臺灣大學 2002 Analysis, design, and optimization of InGaP-GaAs HBTmatched-impedance wide-band amplifiers with multiple feedback loops Chiang, Ming-Chou; Lu, Shey-Shi; Meng, Chin-Chun; Yu, Shih-An; Yang, Shih-Cheng; Chan, Yi-Jen
國立臺灣大學 2002 A 5.7 GHz interpolative VCO using InGaP/GaAs HBT technology Yu, Shih-An; Meng, Chin-Chun; Lu, Shey-Shi
國立臺灣大學 2002 A Simple Method for the Determination of Noise Coefficients P, R, and C by Two Port Noise Parameters Chen, Ping-Yu; Lu, Shey-Shi; Wang, Huei
國立臺灣大學 2002 An Analysis of the Anomalous Dip in Scattering Parameter S22 of InGaP–GaAs Heterojunction Bipolar Transistors (HBTs) Tu, Hsing-Yuan; Lin, Yo-Sheng; Chen, Ping-Yu; Lu, Shey-Shi; Pan, Hsuan-Yu
國立臺灣大學 2001-12 Quality factor improvement of on-chip inductors for HIPERLAN RFIC by micromachining Chiu, Hong-Wei; Chen, Hsiao-Chin; Lu, Shey-shi
國立臺灣大學 2001-02 A Novel Interpretation of Transistor -Parameters by Poles and Zeros for RF IC Circuit Design Lu, Shey-Shi; Meng, Chin-Chun; Chen, To-Wei; Chen, Hsiao-Chin
國立臺灣大學 2001 A process for the formation of submicron V-gate by micromachinedV-grooves using GaInP/GaAs selective etching technique Chiu, Hong-Wei; Ho, Nien-Show; Lu, Shey-Shi
國立臺灣大學 2001 A novel interpretation of Transducer Power Gain by Optical Analogy Pan, Hsuan-Yu; Tu, Hsing-Yuan; Lu, Shey-Shi; Meng, C. C.
國立臺灣大學 1999-02 Ga0.51In0.49P/InxGa1-xAs/GaAs Lattice-Matched and Strained Doped-Channel Field-Effect-Transistors Grown by Gas-Source Molecular-Beam-Epitaxy Lin, Yo-Sheng; Lu, Shey-Shi; Chang, Pei-Zen
臺大學術典藏 1999-02 Ga0.51In0.49P/InxGa1-xAs/GaAs Lattice-Matched and Strained Doped-Channel Field-Effect-Transistors Grown by Gas-Source Molecular-Beam-Epitaxy Chang, Pei-Zen; Lu, Shey-Shi; Lin, Yo-Sheng; Lin, Yo-Sheng;Lu, Shey-Shi;Chang, Pei-Zen

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