| 國立臺灣大學 |
2002 |
Analysis, design, and optimization of InGaP-GaAs HBTmatched-impedance wide-band amplifiers with multiple feedback loops
|
Chiang, Ming-Chou; Lu, Shey-Shi; Meng, Chin-Chun; Yu, Shih-An; Yang, Shih-Cheng; Chan, Yi-Jen |
| 國立臺灣大學 |
2002 |
A 5.7 GHz interpolative VCO using InGaP/GaAs HBT technology
|
Yu, Shih-An; Meng, Chin-Chun; Lu, Shey-Shi |
| 國立臺灣大學 |
2002 |
A Simple Method for the Determination of Noise Coefficients P, R, and C by Two Port Noise Parameters
|
Chen, Ping-Yu; Lu, Shey-Shi; Wang, Huei |
| 國立臺灣大學 |
2002 |
An Analysis of the Anomalous Dip in Scattering Parameter S22 of InGaP–GaAs Heterojunction Bipolar Transistors (HBTs)
|
Tu, Hsing-Yuan; Lin, Yo-Sheng; Chen, Ping-Yu; Lu, Shey-Shi; Pan, Hsuan-Yu |
| 國立臺灣大學 |
2001-12 |
Quality factor improvement of on-chip inductors for HIPERLAN RFIC by micromachining
|
Chiu, Hong-Wei; Chen, Hsiao-Chin; Lu, Shey-shi |
| 國立臺灣大學 |
2001-02 |
A Novel Interpretation of Transistor -Parameters by Poles and Zeros for RF IC Circuit Design
|
Lu, Shey-Shi; Meng, Chin-Chun; Chen, To-Wei; Chen, Hsiao-Chin |
| 國立臺灣大學 |
2001 |
A process for the formation of submicron V-gate by micromachinedV-grooves using GaInP/GaAs selective etching technique
|
Chiu, Hong-Wei; Ho, Nien-Show; Lu, Shey-Shi |
| 國立臺灣大學 |
2001 |
A novel interpretation of Transducer Power Gain by Optical Analogy
|
Pan, Hsuan-Yu; Tu, Hsing-Yuan; Lu, Shey-Shi; Meng, C. C. |
| 國立臺灣大學 |
1999-02 |
Ga0.51In0.49P/InxGa1-xAs/GaAs Lattice-Matched and Strained Doped-Channel Field-Effect-Transistors Grown by Gas-Source Molecular-Beam-Epitaxy
|
Lin, Yo-Sheng; Lu, Shey-Shi; Chang, Pei-Zen |
| 臺大學術典藏 |
1999-02 |
Ga0.51In0.49P/InxGa1-xAs/GaAs Lattice-Matched and Strained Doped-Channel Field-Effect-Transistors Grown by Gas-Source Molecular-Beam-Epitaxy
|
Chang, Pei-Zen; Lu, Shey-Shi; Lin, Yo-Sheng; Lin, Yo-Sheng;Lu, Shey-Shi;Chang, Pei-Zen |
| 國立臺灣大學 |
1999-01 |
S-Band MMIC Amplifier Using Ga0.51In0.49P/GaAs MISFET’s as Active Devices
|
Lin, Yo-Sheng; Lu, Shey-Shi; Lan-Hai; Chang, Pei-Zen |
| 國立臺灣大學 |
1999 |
Single-voltage-supply operation of Ga0.51In0.49P/In0.15Ga0.85As insulated-gate FETs forpower application
|
Lu, Shey-Shi; Hsu, Yao-Wen; Meng, Chin-Chun; Chen, Liang-Po |
| 國立臺灣大學 |
1999 |
The effect of gate recess profile on device performance ofGa0.51In0.49P/In0.2Ga0.8Asdoped-channel FET's
|
Lu, Shey-Shi; Meng, Chin-Chun; Lin, Yo-Sheng; Lan, Hai |
| 國立臺灣大學 |
1999 |
Ga0.51In0.49P/InxGa1 – xAs/GaAs lattice-matched and strained doped-channel field-effect transistors grown by gas source molecular beam epitaxy
|
Lin, Yo-Sheng; Lu, Shey-Shi; Chang, Pei-Zen |
| 臺大學術典藏 |
1999 |
S-Band MMIC Amplifier Using Ga0.51In0.49P/GaAs MISFET’s as Active Devices
|
Lan-Hai;Lin, Yo-Sheng;Lu, Shey-Shi;Chang, Pei-Zen; Lin, Yo-Sheng; Lu, Shey-Shi; Lan-Hai; Chang, Pei-Zen |
| 國立臺灣大學 |
1997-06 |
Fabrication and simulation of Ga0.51In0.49P/InxGa1-xAs doped-channel FETs and MMIC amplifiers grown by GSMBE
|
Lu, Shey-Shi; Lin, Yo-Sheng |
| 國立臺灣大學 |
1997-05 |
High-power high-speed Ga0.51In0.49P/InxGa1-xAs doped-channel FET's
|
Lin, Yo-Sheng; Lu, Shey-Shi |
| 國立臺灣大學 |
1997 |
Ga0.51In0.49P/In0.15Ga0.85 As/GaAs pseudomorphic doped-channel FET with high-current density and high-breakdown voltage
|
Lin, Yo-Sheng; Sun, Tai-Ping; Lu, Shey-Shi |
| 國立臺灣大學 |
1997 |
High-performance Ga0.51In0.49P/GaAs airbridgegate MISFET's grown by gas-source MBE
|
Lin, Yo-Sheng; Lu, Shey-Shi; Wang, Yo-Jen |
| 國立臺灣大學 |
1996-11 |
Fabrication and simulation of high-power high-speed Ga0.51In0.49P/GaAs airbridge gate MISFET's grown by GSMBE
|
Lin, Yo-Sheng; Wang, Yo-Jen; Lu, Shey-Shi; Meng, Charles Chin-Chun |
| 國立臺灣大學 |
1996-10 |
The effect of extrinsic capacitances on the microwave performance of Ga0.51In0.49P/GaAs MISFETs (0 nm ≦ t ≦10 nm) grown by GSMBE
|
Lin, Yo-Sheng; Lu, Shey-Shi |
| 國立臺灣大學 |
1996 |
High-breakdown-voltage Ga0.51In0.49P channel MESFET's grown by GSMBE
|
Lin, Yo-Sheng; Lu, Shey-Shi |
| 國立臺灣大學 |
1996 |
複合式半導體微型壓力感測計之研究(總計畫)
|
呂學士; 胡振國; 張培仁; Lu, Shey-Shi; Hwu, Jenn-Gwo; Chang, Pei-Zen |
| 國立臺灣大學 |
1995-11 |
A Wide-G Range Silicon Piezoresistive Accelerometer
|
Hsu, Yu-Wen; Lu, Shey-Shi; Yang, Lung-Jieh; Chang, Pei-Zen |
| 國立臺灣大學 |
1995-10 |
High-linearity high current drivability GaInP/GaAs MISFET using GaInP airbridge gate structure grown by GSMBE
|
Lu, Shey-Shi; Lin, Yo-Shen |
