|
|
???tair.name??? >
???browser.page.title.author???
|
"lu ying hsin"???jsp.browse.items-by-author.description???
Showing items 1-25 of 29 (2 Page(s) Totally)
1 2 > >>
View [10|25|50] records per page
| 國立交通大學 |
2019-09-02T07:46:10Z |
A Dual-Gate InGaZnO4-Based Thin-Film Transistor for High-Sensitivity UV Detection
|
Chen, Po-Hsun; Tsao, Yu-Ching; Chien, Yu-Chieh; Chiang, Hsiao-Cheng; Chen, Hua-Mao; Lu, Ying-Hsin; Shih, Chih-Cheng; Tai, Mao-Chou; Chen, Guan-Fu; Tsai, Yu-Lin; Huang, Hui-Chun; Tsai, Tsung-Ming; Chang, Ting-Chang |
| 國立交通大學 |
2018-08-21T05:54:10Z |
Fast-IV Measurement Investigation of the Role of TiN Gate Nitrogen Concentration on Bulk Traps in HfO2 Layer in p-MOSFETs
|
Lu, Ying-Hsin; Chang, Ting-Chang; Liao, Jih-Chien; Chen, Li-Hui; Lin, Yu-Shan; Chen, Ching-En; Liu, Kuan-Ju; Liu, Xi-Wen; Lin, Chien-Yu; Lien, Chen-Hsin; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Yen, Wei-Ting |
| 國立交通大學 |
2018-08-21T05:54:04Z |
Analysis of Contrasting Degradation Behaviors in Channel and Drift Regions Under Hot Carrier Stress in PDSOI LD N-Channel MOSFETs
|
Lin, Chien-Yu; Chang, Ting-Chang; Liu, Kuan-Ju; Chen, Li-Hui; Tsai, Jyun-Yu; Chen, Ching-En; Lu, Ying-Hsin; Liu, Hsi-Wen; Liao, Jin-Chien; Chang, Kuan-Chang |
| 國立交通大學 |
2018-08-21T05:53:13Z |
Combined Effects of Light Illumination and Various Bottom Gate Length on the Instability of Via-Contact-Type Amorphous InGaZnO Thin-Film Transistors
|
Yang, Chung-I; Chang, Ting-Chang; Liao, Po-Yung; Chen, Bo-Wei; Chou, Wu-Ching; Chen, Guan-Fu; Huang, Shin-Ping; Zheng, Yu-Zhe; Wang, Yu-Xuan; Liu, Hsi-Wen; Lin, Chien-Yu; Lin, Yu-Shan; Lu, Ying-Hsin; Zhang, Shengdong |
| 國立交通大學 |
2018-08-21T05:52:56Z |
Analysis of abnormal transconductance in body-tied partially-depleted silicon-on-insulator n-MOSFETs
|
Lin, Chien-Yu; Chang, Ting-Chang; Liu, Kuan-Ju; Chen, Li-Hui; Chen, Ching-En; Tsai, Jyun-Yu; Liu, Hsi-Wen; Lu, Ying-Hsin; Liao, Jin-Chien; Ciou, Fong-Min; Lin, Yu-Shan |
| 國立交通大學 |
2017-04-21T06:56:31Z |
Analysis of Oxide Trap Characteristics by Random Telegraph Signals in nMOSFETs With HfO2-Based Gate Dielectrics
|
Chen, Ching-En; Chang, Ting-Chang; You, Bo; Tsai, Jyun-Yu; Lo, Wen-Hung; Ho, Szu-Han; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Hung, Yu-Ju; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen |
| 國立交通大學 |
2017-04-21T06:56:20Z |
Effects of fabrication method on defects induced by nitrogen diffusion to the hafnium oxide layer in metal-oxide-semiconductor field effect transistors
|
Lu, Ying-Hsin; Chang, Ting-Chang; Ho, Szu-Han; Chen, Ching-En; Tsai, Jyun-Yu; Liu, Kuan-Ju; Liu, Xi-Wen; Lin, Chien-yu; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Yen, Wei-Ting |
| 國立交通大學 |
2017-04-21T06:56:20Z |
Impact of post-metal deposition annealing temperature on performance and reliability of high-K metal-gate n-FinFETs
|
Lin, Chien-Yu; Chang, Ting-Chang; Liu, Kuan-Ju; Tsai, Jyun-Yu; Chen, Ching-En; Liu, Hsi-Wen; Lu, Ying-Hsin; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung |
| 國立交通大學 |
2017-04-21T06:55:25Z |
Abnormal Transconductance Enhancement under Positive Bias Stress in Nanoscale n-Channel Fin Field-Effect-Transistors
|
Liu, Kuan-Ju; Chang, Ting-Chang; Lin, Chien-Yu; Chen, Ching-En; Tsai, Jyun-Yu; Lu, Ying-Hsin; Liu, Hsi-Wen; Cheng, Osbert; Huang, Cheng-Tung |
| 國立交通大學 |
2017-04-21T06:55:22Z |
Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate
|
Liu, Hsi-Wen; Chang, Ting-Chang; Tsai, Jyun-Yu; Chen, Ching-En; Liu, Kuan-Ju; Lu, Ying-Hsin; Lin, Chien-Yu; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Ye, Yi-Han |
| 國立交通大學 |
2017-04-21T06:48:50Z |
Investigation of Abnormal Off-Current in p-Channel Double Diffused Drain Metal-Oxide-Semiconductor Transistors after Hot Carrier Stress
|
Chen, Ching-En; Chang, Ting-Chang; Lu, Ying-Hsin; Chen, Hua-Mao; Chen, Bo-Wei; Pan, Chih-Hung; Hung, Yu-Ju |
| 國立成功大學 |
2016-12 |
Effects of fabrication method on defects induced by nitrogen diffusion to the hafnium oxide layer in metal-oxide-semiconductor field effect transistors
|
Lu, Ying-Hsin; Chang, Ting-Chang; Ho, Szu-Han; Chen, Ching-En; Tsai, Jyun-Yu; Liu, Kuan-Ju; Liu, Xi-Wen; Lin, Chien-yu; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Yen, Wei-Ting |
| 國立成功大學 |
2016-06 |
Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric
|
Tsai, Shu-Ju; Wang, Chiang-Lun; Lee, Hung-Chun; Lin, Chun-Yeh; Chen, Jhih-Wei; Shiu, Hong-Wei; Chang, Lo-Yueh; Hsueh, Han-Ting; Chen, Hung-Ying; Tsai, Jyun-Yu; Lu, Ying-Hsin; Chang, Ting-Chang; Tu, Li-Wei; Teng, Hsisheng; Chen, Yi-Chun; Chen, Chia-Hao; Wu, Chung-Lin |
| 國立成功大學 |
2016-04-25 |
Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate
|
Liu, Hsi-Wen; Chang, Ting-Chang; Tsai, Jyun-Yu; Chen, Ching-En; Liu, Kuan-Ju; Lu, Ying-Hsin; Lin, Chien-Yu; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Ye, Yi-Han |
| 國立成功大學 |
2016-04 |
Analysis of Oxide Trap Characteristics by Random Telegraph Signals in nMOSFETs With HfO2-Based Gate Dielectrics
|
Chen, Ching-En; Chang, Ting-Chang; You, Bo; Tsai, Jyun-Yu; Lo, Wen-Hung; Ho, Szu-Han; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Hung, Yu-Ju; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen |
| 國立成功大學 |
2016 |
Abnormal Transconductance Enhancement under Positive Bias Stress in Nanoscale n-Channel Fin Field-Effect-Transistors
|
Liu, Kuan-Ju; Chang, Ting-Chang; Lin, Chien-Yu; Chen, Ching-En; Tsai, Jyun-Yu; Lu, Ying-Hsin; Liu, Hsi-Wen; Cheng, Osbert; Huang, Cheng-Tung |
| 國立交通大學 |
2015-12-02T02:59:33Z |
A Method to Determine the Located Region of Lateral Trap Position by Analysis of Three-Level Random Telegraph Signals in n-MOSFETs
|
Chen, Ching-En; Chang, Ting-Chang; You, Bo; Tsai, Jyun-Yu; Lo, Wen-Hung; Ho, Szu-Han; Liu, Kuan-Ju; Lu, Ying-Hsin; Hung, Yu-Ju; Tseng, Tseung-Yuen; Wu, James; Tsai, Wei-Kung; Chenge, Kuo-Yu; Syu, Yong-En |
| 國立交通大學 |
2015-12-02T02:59:24Z |
Investigation of defect-induced abnormal body current in fin field-effect-transistors
|
Liu, Kuan-Ju; Chang, Ting-Chang; Chen, Ching-En; Yang, Ren-Ya; Tsai, Jyun-Yu; Lu, Ying-Hsin; Liu, Xi-Wen; Cheng, Osbert; Huang, Cheng-Tung |
| 國立交通大學 |
2015-12-02T02:59:14Z |
The Impact of Pre/Post-metal Deposition Annealing on Negative-Bias-Temperature Instability in HfO2 Stack p-Channel Metal-Oxide-Semiconductor Field Effect Transistors
|
Lu, Ying-Hsin; Chang, Ting-Chang; Ho, Szu-Han; Chen, Ching-En; Tsai, Jyun-Yu; Liu, Kuan-Ju; Liu, Xi-Wen; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen |
| 國立成功大學 |
2015-08-24 |
Investigation of defect-induced abnormal body current in fin field-effect-transistors
|
Liu, Kuan-Ju; Chang, Ting-Chang; Chen, Ching-En; Yang, Ren-Ya; Tsai, Jyun-Yu; Lu, Ying-Hsin; Liu, Xi-Wen; Cheng, Osbert; Huang, Cheng-Tung |
| 國立交通大學 |
2015-07-21T11:20:52Z |
Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks
|
Tsai, Jyun-Yu; Chang, Ting-Chang; Chen, Ching-En; Ho, Szu-Han; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen |
| 國立成功大學 |
2015 |
A Method to Determine the Located Region of Lateral Trap Position by Analysis of Three-Level Random Telegraph Signals in n-MOSFETs
|
Chen, Ching-En; Chang, Ting-Chang; You, Bo; Tsai, Jyun-Yu; Lo, Wen-Hung; Ho, Szu-Han; Liu, Kuan-Ju; Lu, Ying-Hsin; Hung, Yu-Ju; Tseng, Tseung-Yuen; Wu, James; Tsai, Wei-Kung; Chenge, Kuo-Yu; Syu, Yong-En |
| 國立成功大學 |
2015 |
The Impact of Pre/Post-metal Deposition Annealing on Negative-Bias-Temperature Instability in HfO2 Stack p-Channel Metal-Oxide-Semiconductor Field Effect Transistors
|
Lu, Ying-Hsin; Chang, Ting-Chang; Ho, Szu-Han; Chen, Ching-En; Tsai, Jyun-Yu; Liu, Kuan-Ju; Liu, Xi-Wen; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen |
| 國立交通大學 |
2014-12-08T15:36:22Z |
On the Origin of Anomalous OffCurrent Under Hot Carrier Stress in p-Channel DDDMOS Transistors With STI Structure
|
Chen, Ching-En; Chang, Ting-Chang; Chen, Hua-Mao; You, Bo; Yang, Kai-Hsiang; Ho, Szu-Han; Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Hung, Yu-Ju; Tai, Ya-Hsiang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:35:55Z |
Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO2 structure using fast I-V measurement
|
Ho, Szu-Han; Chang, Ting-Chang; Lu, Ying-Hsin; Chen, Ching-En; Tsai, Jyun-Yu; Liu, Kuan-Ju; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen |
Showing items 1-25 of 29 (2 Page(s) Totally)
1 2 > >>
View [10|25|50] records per page
|
