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Showing items 1-10 of 12 (2 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:45:32Z |
Fermi and anti-Fermi glass transition and subband resonant quantum tunneling in Nb/Ti metallic multilayer films
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Lue, JT; Liang, SY; Lee, YW; Lue, HT |
| 國立交通大學 |
2014-12-08T15:45:11Z |
Photoluminescence and electron paramagnetic resonance studies of defect centers in porous silicon
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Lue, HT; Huang, BY; Lue, JT |
| 國立交通大學 |
2014-12-08T15:43:15Z |
Application of on-wafer TRL calibration on the measurement of microwave properties of Ba0.5Sr0.5TiO3 thin films
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Lue, HT; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:42:52Z |
Addenda to photoluminescence and electron paramagnetic resonance studies of defect centers in porous silicon
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Lue, HT; Tseng, CY; Lue, JT |
| 國立交通大學 |
2014-12-08T15:42:30Z |
A method to characterize the dielectric and interfacial properties of metal-insulator-semiconductor structures by microwave measurement
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Lue, HT; Tseng, TY; Huang, GW |
| 國立交通大學 |
2014-12-08T15:42:22Z |
Microwave penetration depth measurement for high T-c superconductors by dielectric resonators
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Lue, HT; Lue, JT; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:42:00Z |
An improved two-frequency method of capacitance measurement for SrTiO3 as high-k gate dielectric
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Lue, HT; Liu, CY; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:41:52Z |
Device modeling of ferroelectric memory field-effect transistor (FeMFET)
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Lue, HT; Wu, CJ; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:41:39Z |
Effects of nitridation of silicon and repeated spike heating on the electrical properties of SrTiO3 gate dielectrics
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Liu, CY; Lue, HT; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:41:26Z |
Device Modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memory
|
Lue, HT; Wu, CJ; Tseng, TY |
Showing items 1-10 of 12 (2 Page(s) Totally)
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