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Taiwan Academic Institutional Repository >
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"mannaerts jp"
Showing items 136-145 of 268 (27 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T04:31:33Z |
Relative intensity noise of vertical cavity surface emitting lasers
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Lau, KY; Smith, JS; Hong, M; Mannaerts, JP; MINGHWEI HONG; Kuchta, Daniel M;Gamelin, J;Walker, JD;Lin, J;Lau, KY;Smith, JS;Hong, M;Mannaerts, JP; Kuchta, Daniel M; Gamelin, J; Walker, JD; Lin, J |
| 臺大學術典藏 |
2018-09-10T04:31:33Z |
GaAs-based MOSFETs with Al/sub 2/O/sub 3/gate dielectrics grown by atomic layer deposition
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Ye, PD;Wilk, GD;Yang, B;Kwo, J;Gossmann, H-JL;Frei, M;Chu, SNG;Nakahara, S;Mannaerts, JP;Sergent, M;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Chu, SNG; Nakahara, S; Mannaerts, JP; Sergent, M; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:33Z |
GaAs-based MOSFETs with Al/sub 2/O/sub 3/gate dielectrics grown by atomic layer deposition
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Ye, PD;Wilk, GD;Yang, B;Kwo, J;Gossmann, H-JL;Frei, M;Chu, SNG;Nakahara, S;Mannaerts, JP;Sergent, M;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Chu, SNG; Nakahara, S; Mannaerts, JP; Sergent, M; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
Hydrogen plasma processing of GaAs and AlGaAs
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Choquette, Kent D;Freund, RS;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC; Choquette, Kent D; Freund, RS; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
Hydrogen plasma processing of GaAs and AlGaAs
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Choquette, Kent D;Freund, RS;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC; Choquette, Kent D; Freund, RS; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
Removal of GaAs surface contaminants using H2 electron cyclotron resonance plasma treatment followed by Cl2 chemical etching
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Hong, M;Freund, RS;Choquette, KD;Luftman, HS;Mannaerts, JP;Wetzel, RC; Hong, M; Freund, RS; Choquette, KD; Luftman, HS; Mannaerts, JP; Wetzel, RC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
Removal of GaAs surface contaminants using H2 electron cyclotron resonance plasma treatment followed by Cl2 chemical etching
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Hong, M;Freund, RS;Choquette, KD;Luftman, HS;Mannaerts, JP;Wetzel, RC; Hong, M; Freund, RS; Choquette, KD; Luftman, HS; Mannaerts, JP; Wetzel, RC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
GaAs surface reconstruction obtained using a dry process
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Choquette, Kent D;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
GaAs surface reconstruction obtained using a dry process
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Choquette, Kent D;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
Hydrogen plasma removal of AlGaAs oxides before molecular beam epitaxy
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Choquette, Kent D;Hong, M;Chu, SNG;Luftman, HS;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Chu, SNG; Luftman, HS; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG |
Showing items 136-145 of 268 (27 Page(s) Totally)
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