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"mannaerts jp"的相关文件
显示项目 136-185 / 268 (共6页)
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| 臺大學術典藏 |
2018-09-10T04:31:33Z |
Relative intensity noise of vertical cavity surface emitting lasers
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Lau, KY; Smith, JS; Hong, M; Mannaerts, JP; MINGHWEI HONG; Kuchta, Daniel M;Gamelin, J;Walker, JD;Lin, J;Lau, KY;Smith, JS;Hong, M;Mannaerts, JP; Kuchta, Daniel M; Gamelin, J; Walker, JD; Lin, J |
| 臺大學術典藏 |
2018-09-10T04:31:33Z |
GaAs-based MOSFETs with Al/sub 2/O/sub 3/gate dielectrics grown by atomic layer deposition
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Ye, PD;Wilk, GD;Yang, B;Kwo, J;Gossmann, H-JL;Frei, M;Chu, SNG;Nakahara, S;Mannaerts, JP;Sergent, M;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Chu, SNG; Nakahara, S; Mannaerts, JP; Sergent, M; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:33Z |
GaAs-based MOSFETs with Al/sub 2/O/sub 3/gate dielectrics grown by atomic layer deposition
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Ye, PD;Wilk, GD;Yang, B;Kwo, J;Gossmann, H-JL;Frei, M;Chu, SNG;Nakahara, S;Mannaerts, JP;Sergent, M;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Chu, SNG; Nakahara, S; Mannaerts, JP; Sergent, M; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
Hydrogen plasma processing of GaAs and AlGaAs
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Choquette, Kent D;Freund, RS;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC; Choquette, Kent D; Freund, RS; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
Hydrogen plasma processing of GaAs and AlGaAs
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Choquette, Kent D;Freund, RS;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC; Choquette, Kent D; Freund, RS; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
Removal of GaAs surface contaminants using H2 electron cyclotron resonance plasma treatment followed by Cl2 chemical etching
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Hong, M;Freund, RS;Choquette, KD;Luftman, HS;Mannaerts, JP;Wetzel, RC; Hong, M; Freund, RS; Choquette, KD; Luftman, HS; Mannaerts, JP; Wetzel, RC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
Removal of GaAs surface contaminants using H2 electron cyclotron resonance plasma treatment followed by Cl2 chemical etching
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Hong, M;Freund, RS;Choquette, KD;Luftman, HS;Mannaerts, JP;Wetzel, RC; Hong, M; Freund, RS; Choquette, KD; Luftman, HS; Mannaerts, JP; Wetzel, RC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
GaAs surface reconstruction obtained using a dry process
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Choquette, Kent D;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
GaAs surface reconstruction obtained using a dry process
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Choquette, Kent D;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
Hydrogen plasma removal of AlGaAs oxides before molecular beam epitaxy
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Choquette, Kent D;Hong, M;Chu, SNG;Luftman, HS;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Chu, SNG; Luftman, HS; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
Hydrogen plasma removal of AlGaAs oxides before molecular beam epitaxy
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Choquette, Kent D;Hong, M;Chu, SNG;Luftman, HS;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Chu, SNG; Luftman, HS; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
Vertical-cavity surface-emitting laser diodes fabricated by in situ dry etching and molecular beam epitaxial regrowth
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Choquette, Kent D;Hong, M;Freund, RS;Mannaerts, JP;Wetzel, RC;Leibenguth, RE; Choquette, Kent D; Hong, M; Freund, RS; Mannaerts, JP; Wetzel, RC; Leibenguth, RE; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
Vertical-cavity surface-emitting laser diodes fabricated by in situ dry etching and molecular beam epitaxial regrowth
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Choquette, Kent D;Hong, M;Freund, RS;Mannaerts, JP;Wetzel, RC;Leibenguth, RE; Choquette, Kent D; Hong, M; Freund, RS; Mannaerts, JP; Wetzel, RC; Leibenguth, RE; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:31Z |
Buried heterostructure surface emitting laser diodes fabricated using integrated vacuum processing
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Hong, M;Vakhshoori, D;Grover, LH;Mannaerts, JP;Wynn, JD;Freund, RS; Hong, M; Vakhshoori, D; Grover, LH; Mannaerts, JP; Wynn, JD; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:31Z |
Buried heterostructure surface emitting laser diodes fabricated using integrated vacuum processing
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Hong, M;Vakhshoori, D;Grover, LH;Mannaerts, JP;Wynn, JD;Freund, RS; Hong, M; Vakhshoori, D; Grover, LH; Mannaerts, JP; Wynn, JD; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:31Z |
Vacuum integrated fabrication of vertical-cavity surface emitting lasers
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Choquette, Kent D;Hong, M;Freund, RS;Chu, SNG;Wetzel, RC;Mannaerts, JP;Leibenguth, RE; Choquette, Kent D; Hong, M; Freund, RS; Chu, SNG; Wetzel, RC; Mannaerts, JP; Leibenguth, RE; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:31Z |
Vacuum integrated fabrication of vertical-cavity surface emitting lasers
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Choquette, Kent D;Hong, M;Freund, RS;Chu, SNG;Wetzel, RC;Mannaerts, JP;Leibenguth, RE; Choquette, Kent D; Hong, M; Freund, RS; Chu, SNG; Wetzel, RC; Mannaerts, JP; Leibenguth, RE; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:31Z |
Vacuum Integrated Fabrication of Buried Heterostructure Edge Emitting Laser Diodes
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Hong, M;Vahkshoori, D;Grober, LH;Mannaerts, JP;Chu, SNG;Wynn, JD;Freund, RS; Hong, M; Vahkshoori, D; Grober, LH; Mannaerts, JP; Chu, SNG; Wynn, JD; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:31Z |
Vacuum Integrated Fabrication of Buried Heterostructure Edge Emitting Laser Diodes
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Hong, M;Vahkshoori, D;Grober, LH;Mannaerts, JP;Chu, SNG;Wynn, JD;Freund, RS; Hong, M; Vahkshoori, D; Grober, LH; Mannaerts, JP; Chu, SNG; Wynn, JD; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:30Z |
Low resistance and large current range CW single-mode top surface-emitting laser with small window
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Du, Guotong;Zhao, Fanghai;Zhang, Xiaobo;Gao, Dingsan;Lin, J;Gamelin, JK;Wu, B;Wang, S;Hong, Minghwei;Mannaerts, JP; Du, Guotong; Zhao, Fanghai; Zhang, Xiaobo; Gao, Dingsan; Lin, J; Gamelin, JK; Wu, B; Wang, S; Hong, Minghwei; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:30Z |
Low resistance and large current range CW single-mode top surface-emitting laser with small window
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Du, Guotong;Zhao, Fanghai;Zhang, Xiaobo;Gao, Dingsan;Lin, J;Gamelin, JK;Wu, B;Wang, S;Hong, Minghwei;Mannaerts, JP; Du, Guotong; Zhao, Fanghai; Zhang, Xiaobo; Gao, Dingsan; Lin, J; Gamelin, JK; Wu, B; Wang, S; Hong, Minghwei; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:30Z |
Buried AlGaAs/GaAs/InGaAs laser diodes fabricated by in-situ anisotropic etching and molecular beam epitaxy
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Vakhshoori, D;Hong, M;Grober, LH;Mannaerts, JP;Chu, SNG;Wynn, JD;Freund, RS; Vakhshoori, D; Hong, M; Grober, LH; Mannaerts, JP; Chu, SNG; Wynn, JD; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:30Z |
Buried AlGaAs/GaAs/InGaAs laser diodes fabricated by in-situ anisotropic etching and molecular beam epitaxy
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Vakhshoori, D;Hong, M;Grober, LH;Mannaerts, JP;Chu, SNG;Wynn, JD;Freund, RS; Vakhshoori, D; Hong, M; Grober, LH; Mannaerts, JP; Chu, SNG; Wynn, JD; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:35Z |
TRANSMISSION ELECTRON-MICROSCOPY STUDY OF INTERMETALLIC COMPOUND FE3ALXSI1-X EPITAXIALLY GROWN ON GAAS
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Hsieh, YF;Hong, M;Kwo, J;Kortan, AR;Chen, HS;Mannaerts, JP; Hsieh, YF; Hong, M; Kwo, J; Kortan, AR; Chen, HS; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:35Z |
TRANSMISSION ELECTRON-MICROSCOPY STUDY OF INTERMETALLIC COMPOUND FE3ALXSI1-X EPITAXIALLY GROWN ON GAAS
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Hsieh, YF;Hong, M;Kwo, J;Kortan, AR;Chen, HS;Mannaerts, JP; Hsieh, YF; Hong, M; Kwo, J; Kortan, AR; Chen, HS; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:35Z |
Single-crystal GaN/Gd2O3/GaN heterostructure
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MINGHWEI HONG; Lee, CM; Chyi, JI; Anselm, KA; Cho, AY; Ng, HM; Kortan, AR; Mannaerts, JP; Chu, SNG; Kwo, J; Hong, M;Kwo, J;Chu, SNG;Mannaerts, JP;Kortan, AR;Ng, HM;Cho, AY;Anselm, KA;Lee, CM;Chyi, JI; Hong, M |
| 臺大學術典藏 |
2018-09-10T04:11:35Z |
Single-crystal GaN/Gd2O3/GaN heterostructure
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MINGHWEI HONG; Lee, CM; Chyi, JI; Anselm, KA; Cho, AY; Ng, HM; Kortan, AR; Mannaerts, JP; Chu, SNG; Kwo, J; Hong, M;Kwo, J;Chu, SNG;Mannaerts, JP;Kortan, AR;Ng, HM;Cho, AY;Anselm, KA;Lee, CM;Chyi, JI; Hong, M |
| 臺大學術典藏 |
2018-09-10T04:11:35Z |
Optical properties of gallium oxide thin films
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Rebien, M;Henrion, W;Hong, M;Mannaerts, JP;Fleischer, M; Rebien, M; Henrion, W; Hong, M; Mannaerts, JP; Fleischer, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:35Z |
Optical properties of gallium oxide thin films
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Rebien, M;Henrion, W;Hong, M;Mannaerts, JP;Fleischer, M; Rebien, M; Henrion, W; Hong, M; Mannaerts, JP; Fleischer, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:34Z |
Temperature modulation molecular-beam epitaxy and its application to the growth of periodic index separate confinement heterostructure InGaAs quantum-well lasers
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Hong, M;Wu, MC;Chen, YK;Mannaerts, JP;Chin, MA; Hong, M; Wu, MC; Chen, YK; Mannaerts, JP; Chin, MA; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:34Z |
Temperature modulation molecular-beam epitaxy and its application to the growth of periodic index separate confinement heterostructure InGaAs quantum-well lasers
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Hong, M;Wu, MC;Chen, YK;Mannaerts, JP;Chin, MA; Hong, M; Wu, MC; Chen, YK; Mannaerts, JP; Chin, MA; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:34Z |
In situ deposition of Au on plasma-prepared GaAs substrates
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Choquette, Kent D; Hong, M; Mannaerts, JP; Siconolfi, DJ; Frankenthal, RP; Baiocchi, FA; Wetzel, RC; Freund, RS; MINGHWEI HONG; Choquette, Kent D;Hong, M;Mannaerts, JP;Siconolfi, DJ;Frankenthal, RP;Baiocchi, FA;Wetzel, RC;Freund, RS |
| 臺大學術典藏 |
2018-09-10T04:11:34Z |
In situ deposition of Au on plasma-prepared GaAs substrates
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Choquette, Kent D; Hong, M; Mannaerts, JP; Siconolfi, DJ; Frankenthal, RP; Baiocchi, FA; Wetzel, RC; Freund, RS; MINGHWEI HONG; Choquette, Kent D;Hong, M;Mannaerts, JP;Siconolfi, DJ;Frankenthal, RP;Baiocchi, FA;Wetzel, RC;Freund, RS |
| 臺大學術典藏 |
2018-09-10T04:11:34Z |
MBE growth and characteristics of periodic index separate confinement heterostructure InGaAs quantum-well lasers
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Hong, M;Wu, MC;Chen, YK;Mannaerts, JP;Chin, MA; Hong, M; Wu, MC; Chen, YK; Mannaerts, JP; Chin, MA; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:34Z |
MBE growth and characteristics of periodic index separate confinement heterostructure InGaAs quantum-well lasers
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Hong, M;Wu, MC;Chen, YK;Mannaerts, JP;Chin, MA; Hong, M; Wu, MC; Chen, YK; Mannaerts, JP; Chin, MA; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:34Z |
DC and RF characteristics of depletion-mode GaAs MOSFET employing a thin Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) gate dielectric layer
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Yang, B;Ye, PD;Kwo, J;Frei, MR;Gossmann, H-JL;Mannaerts, JP;Sergent, M;Hong, M;Ng, KK;Bude, J; Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, KK; Bude, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:34Z |
DC and RF characteristics of depletion-mode GaAs MOSFET employing a thin Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) gate dielectric layer
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Yang, B;Ye, PD;Kwo, J;Frei, MR;Gossmann, H-JL;Mannaerts, JP;Sergent, M;Hong, M;Ng, KK;Bude, J; Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, KK; Bude, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:34Z |
Periodic index separate confinement heterostructure InGaAs/AlGaAs quantum well lasers grown by temperature modulation molecular beam epitaxy
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Hong, M;Chen, YK;Wu, MC;V;enberg, JM;Chu, SNG;Mannaerts, JP;Chin, MA; Hong, M; Chen, YK; Wu, MC; V; enberg, JM; Chu, SNG; Mannaerts, JP; Chin, MA; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:34Z |
Periodic index separate confinement heterostructure InGaAs/AlGaAs quantum well lasers grown by temperature modulation molecular beam epitaxy
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Hong, M;Chen, YK;Wu, MC;V;enberg, JM;Chu, SNG;Mannaerts, JP;Chin, MA; Hong, M; Chen, YK; Wu, MC; V; enberg, JM; Chu, SNG; Mannaerts, JP; Chin, MA; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:33Z |
Study of AuAgFe/AlGaAs Schottky diodes fabricated byin situ molecular beam epitaxy
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Wang, YH;Houng, MP;Chen, FH;Sze, PW;Hong, M;Mannaerts, JP; Wang, YH; Houng, MP; Chen, FH; Sze, PW; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:33Z |
Study of AuAgFe/AlGaAs Schottky diodes fabricated byin situ molecular beam epitaxy
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Wang, YH;Houng, MP;Chen, FH;Sze, PW;Hong, M;Mannaerts, JP; Wang, YH; Houng, MP; Chen, FH; Sze, PW; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:33Z |
An investigation of molecular beam epitaxy “in-situ” grown Ag/GaAs schottky diodes
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Wang, YH;Houng, MP;Chen, FH;Sze, PW;Hong, M;Mannaerts, JP; Wang, YH; Houng, MP; Chen, FH; Sze, PW; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:33Z |
An investigation of molecular beam epitaxy “in-situ” grown Ag/GaAs schottky diodes
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Wang, YH;Houng, MP;Chen, FH;Sze, PW;Hong, M;Mannaerts, JP; Wang, YH; Houng, MP; Chen, FH; Sze, PW; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:33Z |
Advances in high & kappa gate dielectrics for Si and III-V semiconductors
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Kwo, J;Hong, M;Busch, B;Muller, DA;Chabal, YJ;Kortan, AR;Mannaerts, JP;Yang, B;Ye, P;Gossmann, H;others; Kwo, J; Hong, M; Busch, B; Muller, DA; Chabal, YJ; Kortan, AR; Mannaerts, JP; Yang, B; Ye, P; Gossmann, H; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:33Z |
Advances in high & kappa gate dielectrics for Si and III-V semiconductors
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Kwo, J;Hong, M;Busch, B;Muller, DA;Chabal, YJ;Kortan, AR;Mannaerts, JP;Yang, B;Ye, P;Gossmann, H;others; Kwo, J; Hong, M; Busch, B; Muller, DA; Chabal, YJ; Kortan, AR; Mannaerts, JP; Yang, B; Ye, P; Gossmann, H; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:33Z |
Electrical characteristics of ultrathin Pt/Y 2 O 3/Si capacitor with rapid post-metallisation annealing
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Lay, TS;Liu, WD;Kwo, J;Hong, M;Mannaerts, JP; Lay, TS; Liu, WD; Kwo, J; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:33Z |
Electrical characteristics of ultrathin Pt/Y 2 O 3/Si capacitor with rapid post-metallisation annealing
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Lay, TS;Liu, WD;Kwo, J;Hong, M;Mannaerts, JP; Lay, TS; Liu, WD; Kwo, J; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:33Z |
Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric
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Yang, B;Ye, PD;Kwo, J;Frei, MR;Gossmann, H-JL;Mannaerts, JP;Sergent, M;Hong, M;Ng, K;Bude, J; Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, K; Bude, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:33Z |
Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric
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Yang, B;Ye, PD;Kwo, J;Frei, MR;Gossmann, H-JL;Mannaerts, JP;Sergent, M;Hong, M;Ng, K;Bude, J; Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, K; Bude, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:32Z |
GaN/Gd2O3/GaN Single Crystal Heterostructure
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Hong, M;Kwo, J;Chu, SNG;Mannaerts, JP;Kortan, AR;Ng, HM;Cho, AY;Anselm, KA;Lee, CM;Chyi, JI; Hong, M; Kwo, J; Chu, SNG; Mannaerts, JP; Kortan, AR; Ng, HM; Cho, AY; Anselm, KA; Lee, CM; Chyi, JI; MINGHWEI HONG |
显示项目 136-185 / 268 (共6页)
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