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Institution Date Title Author
國立中山大學 2009-11 A Non-Classical Self-Aligned _-Shaped Source/Drain Ultrathin SOI Transistor for Future Planar MOSFET Technology Jyi-Tsong Lin;Yi-Chuen Eng;Po-Hsieh Lin;Tzu-Feng Chang;Chih-Hung Sun;Chih-Hao Kuo
國立中山大學 2009-07 A Novel Self-Align Double Gate MOSFET with Source/Drain Tie Po-Hsieh Lin;Jyi-Tsong Lin;Yi-Chuen Eng
國立中山大學 2009-07 Improving Reliability and Diminishing Parasitic Capacitance Effects in a Vertical Transistor with Embedded Gate Jyi-Tsong Lin;Chih-Hao Kuo;Tai-Yi Lee;Yi-Chuen Eng;Tzu-Feng Chang;Po-Hsieh Lin;Hsuan-Hsu Chen
國立中山大學 2009-06 The impact of Junction Depth on Vertical Sidewall MOSFETs with Embedded Gate Chih-Hao Kuo;Jyi-Tsong Lin;Tai-Yi Lee;Yi-Chuen Eng;Tzu-Feng Chang;Po-Hsieh Lin;Hsuan-Hsu Chen;Chih-Hung Sun;Hsien-Nan Chiu
國立中山大學 2009-05 A Novel Double Gate MOSFET with Self-Align Process and Source/Drain Tie Jyi-Tsong Lin;Po-Hsieh Lin;Yi-Chuen Eng
國立中山大學 2009-05 Simulation Study of Novel FinFET Devices with connected body Jyi-Tsong Lin;Po-Hsieh Lin;Yi-Chuen Eng
國立中山大學 2009-05 Future of Planar Self-Aligned Block Oxide Based MOSFET Technology Jyi-Tsong Lin;Yi-Chuen Eng;Chih-Hao Kuo;Tzu-Feng Chang;Chih-Hung Sun;Po-Hsieh Lin;Hsien-Nan Chiu;Hsuan-Hsu Chen
國立中山大學 2009-05 A Novel Double Gate MOSFET with Self-align Process and Source/Drain Tie Po-Hsieh Lin;Jyi-Tsong Lin;Yi-Chuen Eng
國立中山大學 2009-04 A New Novel FinFET Device Po-Hsieh Lin;Jyi-Tsong Lin;Yi-Chuen Eng
國立中山大學 2009-03 Study of New Novel FinFET Device with Its Bodies been Connected Jyi-Tsong Lin;Po-Hsieh Lin;Yi-Chuen Eng

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