臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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机构	日期	题名	作者
臺大學術典藏	2022-03-22T08:34:53Z	Robust Unencapsulated Perovskite Solar Cells Protected by a Fluorinated Fullerene Electron Transporting Layer	Huang H.-H;Tsai H;Raja R;Lin S.-L;Ghosh D;Hou C.-H;Shyue J.-J;Tretiak S;Chen W;Lin K.-F;Nie W;Wang L.; Wang L.; LEE-YIH WANG et al.
臺大學術典藏	2022-03-22T08:31:51Z	Robust Unencapsulated Perovskite Solar Cells Protected by a Fluorinated Fullerene Electron Transporting Layer	Huang H.-H;Tsai H;Raja R;Lin S.-L;Ghosh D;Hou C.-H;Shyue J.-J;Tretiak S;Chen W;Lin K.-F;Nie W;Wang L.; Wang L.; LEE-YIH WANG et al.
臺大學術典藏	2022-03-22T08:30:48Z	Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget	Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:30:48Z	Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices	Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:30:47Z	Atomic Layer Nucleation Engineering: Inhibitor-Free Area-Selective Atomic Layer Deposition of Oxide and Nitride	Chou C.-Y;Lee W.-H;Chuu C.-P;Chen T.-A;Hou C.-H;Yin Y.-T;Wang T.-Y;Shyue J.-J;Li L.-J;Chen M.-J.; Chou C.-Y; Lee W.-H; Chuu C.-P; Chen T.-A; Hou C.-H; Yin Y.-T; Wang T.-Y; Shyue J.-J; Li L.-J; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:30:46Z	Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget	Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:30:46Z	Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices	Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:30:45Z	Atomic Layer Nucleation Engineering: Inhibitor-Free Area-Selective Atomic Layer Deposition of Oxide and Nitride	Chou C.-Y;Lee W.-H;Chuu C.-P;Chen T.-A;Hou C.-H;Yin Y.-T;Wang T.-Y;Shyue J.-J;Li L.-J;Chen M.-J.; Chou C.-Y; Lee W.-H; Chuu C.-P; Chen T.-A; Hou C.-H; Yin Y.-T; Wang T.-Y; Shyue J.-J; Li L.-J; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:30:38Z	Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget	Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN
臺大學術典藏	2022-03-22T08:30:36Z	Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget	Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN

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