| 臺大學術典藏 |
2022-03-22T08:34:53Z |
Robust Unencapsulated Perovskite Solar Cells Protected by a Fluorinated Fullerene Electron Transporting Layer
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Huang H.-H;Tsai H;Raja R;Lin S.-L;Ghosh D;Hou C.-H;Shyue J.-J;Tretiak S;Chen W;Lin K.-F;Nie W;Wang L.; Wang L.; LEE-YIH WANG et al. |
| 臺大學術典藏 |
2022-03-22T08:31:51Z |
Robust Unencapsulated Perovskite Solar Cells Protected by a Fluorinated Fullerene Electron Transporting Layer
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Huang H.-H;Tsai H;Raja R;Lin S.-L;Ghosh D;Hou C.-H;Shyue J.-J;Tretiak S;Chen W;Lin K.-F;Nie W;Wang L.; Wang L.; LEE-YIH WANG et al. |
| 臺大學術典藏 |
2022-03-22T08:30:48Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
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Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:48Z |
Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices
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Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:47Z |
Atomic Layer Nucleation Engineering: Inhibitor-Free Area-Selective Atomic Layer Deposition of Oxide and Nitride
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Chou C.-Y;Lee W.-H;Chuu C.-P;Chen T.-A;Hou C.-H;Yin Y.-T;Wang T.-Y;Shyue J.-J;Li L.-J;Chen M.-J.; Chou C.-Y; Lee W.-H; Chuu C.-P; Chen T.-A; Hou C.-H; Yin Y.-T; Wang T.-Y; Shyue J.-J; Li L.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:46Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
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Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:46Z |
Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices
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Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:45Z |
Atomic Layer Nucleation Engineering: Inhibitor-Free Area-Selective Atomic Layer Deposition of Oxide and Nitride
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Chou C.-Y;Lee W.-H;Chuu C.-P;Chen T.-A;Hou C.-H;Yin Y.-T;Wang T.-Y;Shyue J.-J;Li L.-J;Chen M.-J.; Chou C.-Y; Lee W.-H; Chuu C.-P; Chen T.-A; Hou C.-H; Yin Y.-T; Wang T.-Y; Shyue J.-J; Li L.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:38Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
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Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN |
| 臺大學術典藏 |
2022-03-22T08:30:36Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
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Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN |
| 臺大學術典藏 |
2022-03-22T08:27:46Z |
Atomic Layer Nucleation Engineering: Inhibitor-Free Area-Selective Atomic Layer Deposition of Oxide and Nitride
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Chou C.-Y;Lee W.-H;Chuu C.-P;Chen T.-A;Hou C.-H;Yin Y.-T;Wang T.-Y;Shyue J.-J;Li L.-J;Chen M.-J.; Chou C.-Y; Lee W.-H; Chuu C.-P; Chen T.-A; Hou C.-H; Yin Y.-T; Wang T.-Y; Shyue J.-J; Li L.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:27:46Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
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Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:27:46Z |
Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices
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Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:27:37Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
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Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN |
| 臺大學術典藏 |
2022-03-09T03:12:27Z |
Rapid label-free determination of ketamine in whole blood using secondary ion mass spectrometry
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Liao H.-Y.; Chen J.-H.; Shyue J.-J.; Shun C.-T.; HUEI-WEN CHEN; Liao S.-W.; Hong C.-K.; Chen P.-S. |
| 臺大學術典藏 |
2022-03-09T02:19:00Z |
Rapid label-free determination of ketamine in whole blood using secondary ion mass spectrometry
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Liao H.-Y.; Chen J.-H.; Shyue J.-J.; Shun C.-T.; Chen H.-W.; Liao S.-W.; Hong C.-K.; PAI-SHAN CHEN |
| 臺大學術典藏 |
2021-08-05T02:41:02Z |
Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
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Wang C.-I;Chang T.-J;Yin Y.-T;Jiang Y.-S;Shyue J.-J;Chen M.-J.; Wang C.-I; Chang T.-J; Yin Y.-T; Jiang Y.-S; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2021-08-03T01:43:19Z |
Heterocyclic-Additive-Activated Dinuclear Dysprosium Electrocatalysts for Heterogeneous Water Oxidation
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Tung C.-W;Tso C.-H;Chen B.-Y;Chu H;Hou C.-H;Chen H.-C;Chang M.-C;Shyue J.-J;Lin P.-H;Chen H.M.; Tung C.-W; Tso C.-H; Chen B.-Y; Chu H; Hou C.-H; Chen H.-C; Chang M.-C; Shyue J.-J; Lin P.-H; Chen H.M.; MU-CHIEH CHANG |
| 臺大學術典藏 |
2021-08-03T01:42:56Z |
Heterocyclic-Additive-Activated Dinuclear Dysprosium Electrocatalysts for Heterogeneous Water Oxidation
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Tung C.-W;Tso C.-H;Chen B.-Y;Chu H;Hou C.-H;Chen H.-C;Chang M.-C;Shyue J.-J;Lin P.-H;Chen H.M.; Tung C.-W; Tso C.-H; Chen B.-Y; Chu H; Hou C.-H; Chen H.-C; Chang M.-C; Shyue J.-J; Lin P.-H; Chen H.M.; HAO MING CHEN |
| 臺大學術典藏 |
2021-08-03T01:42:55Z |
In situ unraveling of the effect of the dynamic chemical state on selective CO2reduction upon zinc electrocatalysts
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Chen T.-L;Chen H.-C;Huang Y.-P;Lin S.-C;Hou C.-H;Tan H.-Y;Tung C.-W;Chan T.-S;Shyue J.-J;Chen H.M.; Chen T.-L; Chen H.-C; Huang Y.-P; Lin S.-C; Hou C.-H; Tan H.-Y; Tung C.-W; Chan T.-S; Shyue J.-J; Chen H.M.; HAO MING CHEN |
| 臺大學術典藏 |
2021-07-05T03:41:16Z |
Engineering Antifouling and Antibacterial Stainless Steel for Orthodontic Appliances through Layer-by-Layer Deposition of Nanocomposite Coatings
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BOR-SHIUNN LEE; Lin Y.-C.; Hsu W.-C.; Hou C.-H.; Shyue J.-J.; Hsiao S.-Y.; Wu P.-J.; Lee Y.-T.; Luo S.-C. |
| 臺大學術典藏 |
2021-03-18T02:02:40Z |
Rapid label-free determination of ketamine in whole blood using secondary ion mass spectrometry
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Liao H.-Y.; Chen J.-H.; Shyue J.-J.; CHIA-TUNG SHUN; Chen H.-W.; Liao S.-W.; Hong C.-K.; Chen P.-S. |
| 臺大學術典藏 |
2021-03-04T03:25:41Z |
Growth process control produces high-crystallinity and complete-reaction perovskite solar cells
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Kuan, C.-H.; Kuo, P.-T.; Hou, C.-H.; Shyue, J.-J.; Lin, C.-F.; CHING-FUH LIN |
| 臺大學術典藏 |
2021-01-27T07:50:03Z |
Perfluoro-Functionalized Conducting Polymers Enhance Electrocatalytic Oxygen Reduction
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Mansoure, T.H.;Ayalew, H.;Kao, W.-L.;Shyue, J.-J.;Luo, S.-C.;Cheng, Y.-C.;Yu, H.-H.; Mansoure, T.H.; Ayalew, H.; Kao, W.-L.; Shyue, J.-J.; Luo, S.-C.; Cheng, Y.-C.; Yu, H.-H.; YUAN-CHUNG CHENG |
| 臺大學術典藏 |
2021-01-27T07:49:24Z |
Superior Stability and Emission Quantum Yield (23% ± 3%) of Single-Layer 2D Tin Perovskite TEA2SnI4 via Thiocyanate Passivation
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Lin, J.-T.;Hu, Y.-K.;Hou, C.-H.;Liao, C.-C.;Chuang, W.-T.;Chiu, C.-W.;Tsai, M.-K.;Shyue, J.-J.;Chou, P.-T.; Lin, J.-T.; Hu, Y.-K.; Hou, C.-H.; Liao, C.-C.; Chuang, W.-T.; Chiu, C.-W.; Tsai, M.-K.; Shyue, J.-J.; Chou, P.-T.; CHING-WEN CHIU |