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Showing items 56-65 of 199  (20 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2017-04-21T06:50:14Z Anomalous Electrostatics and Intrinsic Variability in GeOI p-MOSFET Yu, Chang-Hung; Su, Pin
國立交通大學 2017-04-21T06:50:10Z Evaluation of Energy-Efficient Latch Circuits with Hybrid Tunneling FET and FinFET Devices for Ultra-Low-Voltage Applications Wu, Tse-Ching; Chen, Chien-Ju; Chen, Yin-Nien; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te
國立交通大學 2017-04-21T06:50:05Z Investigation of BTI Reliability for Monolithic 3D 6T SRAM with Ultra-thin-body GeOI MOSFETs Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te
國立交通大學 2017-04-21T06:49:57Z Impacts of Work Function Variation and Line-Edge Roughness on TFET and FinFET Devices and Logic Circuits Chen, Chien-Ju; Chen, Yin-Nien; Fan, Ming-Long; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te
國立交通大學 2017-04-21T06:49:47Z UTB GeOI 6T SRAM Cell and Sense Amplifier considering BTI Reliability Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te
國立交通大學 2017-04-21T06:49:44Z Built-in Effective Body-Bias Effect in UTBB Hetero-Channel MOSFETs and Its Suppression Yu, Chang-Hung; Su, Pin
國立交通大學 2017-04-21T06:49:30Z Investigation and Benchmark of Intrinsic Drain-Induced-Barrier-Lowering (DIBL) for Ultra-Thin-Body III-V-on-Insulator n-MOSFETs Yu, Chang-Hung; Su, Pin
國立交通大學 2017-04-21T06:49:25Z Stability Optimization of Monolithic 3-D MoS2-n/WSe2-p SRAM Cells for Superthreshold and Near-/Sub-threshold Applications Yu, Chang-Hung; Su, Pin; Chuang, Ching-Te
國立交通大學 2017-04-21T06:49:25Z Performance Benchmarking of Monolayer and Bilayer Two-Dimensional Transition Metal Dichalcogenide (TMD) Based Logic Circuits Yu, Chang-Hung; Su, Pin; Chuang, Ching-Te
國立交通大學 2017-04-21T06:49:09Z Corner Spacer Design for Performance Optimization of Multi-Gate InGaAs-OI FinFET with Gate-to-Source/Drain Underlap Hu, Vita Pi-Ho; Lo, Chang-Ting; Sachid, Angada B.; Su, Pin; Hu, Chenming

Showing items 56-65 of 199  (20 Page(s) Totally)
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