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"sun jyc"的相关文件
显示项目 1-6 / 6 (共1页)
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| 國立交通大學 |
2014-12-08T15:44:34Z |
Hot carrier reliability improvement by utilizing phosphorus transient enhanced diffusion for input/output devices of deep submicron CMOS technology
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Wang, HCH; Diaz, CH; Liew, BK; Sun, JYC; Wang, TH |
| 國立交通大學 |
2014-12-08T15:43:22Z |
Improving the RF performance of 0.18 mu m CMOS with deep n-well implantation
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Su, JG; Hsu, HM; Wong, SC; Chang, CY; Huang, TY; Sun, JYC |
| 國立交通大學 |
2014-12-08T15:42:55Z |
Arsenic/phosphorus LDD optimization by taking advantage of phosphorus transient enhanced diffusion for high voltage input/output CMOS devices
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Wang, HCH; Wang, CC; Diaz, CH; Liew, BK; Sun, JYC; Wang, TH |
| 國立交通大學 |
2014-12-08T15:40:51Z |
A floating well method for exact capacitance-voltage measurement of nano technology
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Su, HD; Chiou, BS; Wu, SY; Chang, MH; Lee, KH; Chen, YS; Chao, CP; See, YC; Sun, JYC |
| 國立交通大學 |
2014-12-08T15:40:26Z |
Characteristics of oxide breakdown and related impact on device of ultrathin (2.2 nm) silicon dioxide
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Su, HD; Chiou, BS; Wu, SY; Chang, MH; Lee, KH; Chen, YS; Cha, CP; See, YC; Sun, JYC |
| 國立交通大學 |
2014-12-08T15:40:05Z |
Bi-mode breakdown test methodology of ultrathin oxide
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Su, HD; Chiou, BS; Ko, CY; Wu, SY; Chang, MH; Lee, KH; Chen, YS; Chao, CP; See, YC; Sun, JYC |
显示项目 1-6 / 6 (共1页)
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