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Showing items 1-16 of 16 (1 Page(s) Totally)
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| 國立交通大學 |
2018-08-21T05:52:48Z |
Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory
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Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Tsai, Tsung-Ling; Lin, Chun-An; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-01-24T07:38:57Z |
氧化鋯電阻式記憶體元件之熱相關研究
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蔡宗霖; 曾俊元; Tsai, Tsung-Ling |
| 國立交通大學 |
2017-04-21T06:56:40Z |
Enhanced Properties in Conductive-Bridge Resistive Switching Memory With Oxide-Nitride Bilayer Structure
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Tsai, Tsung-Ling; Jiang, Fa-Shen; Ho, Chia-Hua; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2017-04-21T06:55:41Z |
A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structure
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Tsai, Tsung-Ling; Chang, Hsiang-Yu; Lou, Jesse Jen-Chung; Tseng, Tseung-Yuen |
| 國立交通大學 |
2017-04-21T06:55:13Z |
Impacts of Co doping on ZnO transparent switching memory device characteristics
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Simanjuntak, Firman Mangasa; Prasad, Om Kumar; Panda, Debashis; Lin, Chun-An; Tsai, Tsung-Ling; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-02T02:59:35Z |
Impact of Post-Oxide Deposition Annealing on Resistive Switching in HfO2-Based Oxide RRAM and Conductive-Bridge RAM Devices
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Tsai, Tsung-Ling; Chang, Hsiang-Yu; Jiang, Fa-Shen; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-02T02:59:22Z |
Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode
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Simanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-02T02:59:18Z |
Enhanced switching uniformity in AZO/ZnO1-x/ITO transparent resistive memory devices by bipolar double forming
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Simanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-02T02:59:09Z |
Resistive Switching Characteristics of WO3/ZrO2 Structure With Forming-Free, Self-Compliance, and Submicroampere Current Operation
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Tsai, Tsung-Ling; Lin, Yu-Hsuan; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-07-21T08:31:27Z |
Resistive Switching and Rectification Characteristics with CoO/ZrO2 Double Layers
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Tsai, Tsung-Ling; Wu, Jia-Woei; Tseng, Tseng-Yuen |
| 國立交通大學 |
2015-07-21T08:29:17Z |
Unipolar resistive switching behaviors and mechanisms in an annealed Ni/ZrO2/TaN memory device
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Tsai, Tsung-Ling; Ho, Tsung-Han; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-07-21T08:28:49Z |
Room-temperature fabricated, fully transparent resistive memory based on ITO/CeO2/ITO structure for RRAM applications
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Ismail, Muhammad; Rana, Anwar Manzoor; Talib, Ijaz; Tsai, Tsung-Ling; Chand, Umesh; Ahmed, Ejaz; Nadeem, Muhammad Younus; Aziz, Abdul; Shah, Nazar Abbas; Hussain, Muhammad |
| 國立交通大學 |
2014-12-08T15:36:20Z |
Resistive switching characteristics of Pt/CeOx/TiN memory device
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Ismail, Muhammad; Talib, Ijaz; Huang, Chun-Yang; Hung, Chung-Jung; Tsai, Tsung-Ling; Jieng, Jheng-Hong; Chand, Umesh; Lin, Chun-An; Ahmed, Ejaz; Rana, Anwar Manzoor; Nadeem, Muhammad Younus; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:35:07Z |
Forming-free bipolar resistive switching in nonstoichiometric ceria films
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Ismail, Muhammad; Huang, Chun-Yang; Panda, Debashis; Hung, Chung-Jung; Tsai, Tsung-Ling; Jieng, Jheng-Hong; Lin, Chun-An; Chand, Umesh; Rana, Anwar Manzoor; Ahmed, Ejaz; Talib, Ijaz; Nadeem, Muhammad Younus; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:34:59Z |
Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance
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Huang, Chun-Yang; Huang, Chung-Yu; Tsai, Tsung-Ling; Lin, Chun-An; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:31:10Z |
Unipolar resistive switching behavior in Pt/HfO2/TiN device with inserting ZrO2 layer and its 1 diode-1 resistor characteristics
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Lee, Dai-Ying; Tsai, Tsung-Ling; Tseng, Tseung-Yuen |
Showing items 1-16 of 16 (1 Page(s) Totally)
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