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| 國立成功大學 |
2003-10-16 |
Hf-doped and NH3-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift
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Yang, Chih-Wei; Fang, Yean-Kuen; Lin, C. S.; Tsair, Y. S.; Chen, Shi-Ming; Wang, W. D.; Wang, M. F.; Cheng, Juing-Yi; Chen, C. H.; Yao, Liang-Gi; Chen, S. C.; Liang, M. S. |
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