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Taiwan Academic Institutional Repository >
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"tseng tseung yuen"
Showing items 66-90 of 359 (15 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T05:58:38Z |
Resistive Switching Characteristics and Reliability of SiNx-Based Conductive Bridge Random Access Memory
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Lin, Chun-An; Dai, Guang-Jyun; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:26Z |
Ti-Induced Recovery Phenomenon of Resistive Switching in ZrO2 Thin Films
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Lee, Dai-Ying; Wang, Sheng-Yu; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:14Z |
Field Emission Properties and Reliability of ZnO Nanorod, Nanopagoda, and Nanotip Current Emitters
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Yao, I. -Chuan; Lin, Pang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:11Z |
Hydrogen Gas Sensors Using ZnO-SnO2 Core-Shell Nanostructure
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Yao, I-Chuan; Lin, Pang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:00Z |
Second Phase and Defect Formation in Bi0.5Na0.5-xKxTiO3 Ceramics
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Chen, Pin-Yi; Chou, Chen-Chia; Tseng, Tseung-Yuen; Chen, Haydn |
| 國立交通大學 |
2019-04-02T05:57:58Z |
Flexible solid-like electrolytes with ultrahigh conductivity and their applications in all-solid-state supercapacitors
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Yang, Chih-Chieh; Lin, Hao-Yang; Kumar, Amit; Pattanayak, Bhaskar; Tsai, Hung-Yi; Winie, Tan; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:57:56Z |
Forming-free resistive switching behaviors in Cr-embedded Ga2O3 thin film memories
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Lee, Dai-Ying; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:57:53Z |
High-speed and localized resistive switching characteristics of double-layer SrZrO3 memory devices
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Lin, Meng-Han; Wu, Ming-Chi; Huang, Chun-Yang; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:57:52Z |
Robust unipolar resistive switching of Co nano-dots embedded ZrO2 thin film memories and their switching mechanism
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Wu, Ming-Chi; Wu, Tsung-Han; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:57:09Z |
Solid Solubility Limited Dopant Activation of Group III Dopants (B, Ga & In) in Ge Targeting sub-7nm Node Low p plus Contact Resistance
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Borland, John; Lee, Yao-Jen; Chuang, Shang-Shiun; Tseng, Tseung-Yuen; Liu, Chee-Wee; Huet, Karim; Goodman, Gary; Marino, John |
| 國立交通大學 |
2018-08-21T05:57:08Z |
High Performance Bipolar Resistive Switching Characteristics in SiO2/ZrO2/SiO2 Tri-layer Based CBRAM Device
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Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:56:59Z |
A Comprehensive Study of 3-stage High Resistance State Retention Behavior for TMO ReRAMs from Single Cells to a Large Array
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Lin, Yu-Hsuan; Ho, Yung-Han; Lee, Ming-Hsiu; Wang, Chao-Hung; Lin, Yu-Yu; Lee, Feng-Ming; Hsu, Kai-Chieh; Tseng, Po-Hao; Lee, Dai-Ying; Chiang, Kuang-Hao; Wang, Keh-Chung; Tseng, Tseung-Yuen; Lu, Chih-Yuan |
| 國立交通大學 |
2018-08-21T05:56:42Z |
The External Light Trapping for Perovskite Solar Cells Using Nanoimprinted Polymer Metamaterial Patterns
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Lin, Albert; Fu, Sze Ming; Chen, Bo-Ruei; Yan, Sheng-Lun; Zhong, Yan Kai; Kao, Ming-Hsuan; Shen, Chang-Hong; Shieh, Jia-Min; Tseng, Tseung Yuen |
| 國立交通大學 |
2018-08-21T05:56:42Z |
The External Light Trapping Using Down-Conversion Polymer and Diffuse Trench Reflectors
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Lin, Albert; Han, Hau-Vei; Huang, Chien-Yao; Chen, Bo-Ruei; Fu, Sze Ming; Zhong, Yan Kai; Kao, Ming-Hsuan; Shen, Chang-Hong; Shieh, Jia-Min; Lin, Chien-Chung; Kuo, Hao-Chung; Tseng, Tseung Yuen |
| 國立交通大學 |
2018-08-21T05:54:33Z |
In Situ TEM Investigation of the Electrochemical Behavior in CNTs/MnO2-Based Energy Storage Devices
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Tsai, Tsung-Chun; Huang, Guan-Min; Huang, Chun-Wei; Chen, Jui-Yuan; Yang, Chih-Chieh; Tseng, Tseung-Yuen; Wu, Wen-Wei |
| 國立交通大學 |
2018-08-21T05:54:29Z |
Ultra-Shallow Junction Formation by Monolayer Doping Process in Single Crystalline Si and Ge for Future CMOS Devices
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Chuang, Shang-Shiun; Cho, Ta-Chun; Sung, Po-Jung; Kao, Kuo-Hsing; Chen, Henry J. H.; Lee, Yao-Jen; Current, Michael I.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:54:29Z |
Preface
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Tuan, Wei-Hsing; Chou, Chen-Chia; Tseng, Tseung-Yuen; Wang, Sea-Fue; Tseng, Wen-Jea; Shieh, Jay; Huang, Chi-Yuen; Chen, Jhewn-Kuang |
| 國立交通大學 |
2018-08-21T05:54:28Z |
Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell
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Simanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Pattanayak, Bhaskar; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:54:23Z |
Ternary Au/ZnO/rGO nanocomposites electrodes for high performance electrochemical storage devices
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Chaudhary, Manchal; Doong, Ruey-an; Kumar, Nagesh; Tseng, Tseung Yuen |
| 國立交通大學 |
2018-08-21T05:54:17Z |
Carbon Nanotube/Nitrogen-Doped Reduced Graphene Oxide Nanocomposites and Their Application in Supercapacitors
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Yang, Chih-Chieh; Tsai, Meng-Han; Huang, Chun-Wei; Yen, Po-Jen; Pan, Chien-Chung; Wu, Wen-Wei; Wei, Kung-Hwa; Dung, Lan-Rong; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:54:10Z |
Fast-IV Measurement Investigation of the Role of TiN Gate Nitrogen Concentration on Bulk Traps in HfO2 Layer in p-MOSFETs
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Lu, Ying-Hsin; Chang, Ting-Chang; Liao, Jih-Chien; Chen, Li-Hui; Lin, Yu-Shan; Chen, Ching-En; Liu, Kuan-Ju; Liu, Xi-Wen; Lin, Chien-Yu; Lien, Chen-Hsin; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Yen, Wei-Ting |
| 國立交通大學 |
2018-08-21T05:54:05Z |
Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al2O3 thin layer
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Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:53:36Z |
Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layer
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Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:53:36Z |
Role of Al2O3 thin layer on improving the resistive switching properties of Ta5Si3-based conductive bridge random accesses memory device
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Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:53:18Z |
Conductive bridge random access memory characteristics of SiCN based transparent device due to indium diffusion
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Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen |
Showing items 66-90 of 359 (15 Page(s) Totally)
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