|
"tseng tseung yuen"的相关文件
显示项目 66-115 / 359 (共8页)
<< < 1 2 3 4 5 6 7 8 > >>
每页显示[10|25|50]项目
| 國立交通大學 |
2019-04-02T05:58:38Z |
Resistive Switching Characteristics and Reliability of SiNx-Based Conductive Bridge Random Access Memory
|
Lin, Chun-An; Dai, Guang-Jyun; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:26Z |
Ti-Induced Recovery Phenomenon of Resistive Switching in ZrO2 Thin Films
|
Lee, Dai-Ying; Wang, Sheng-Yu; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:14Z |
Field Emission Properties and Reliability of ZnO Nanorod, Nanopagoda, and Nanotip Current Emitters
|
Yao, I. -Chuan; Lin, Pang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:11Z |
Hydrogen Gas Sensors Using ZnO-SnO2 Core-Shell Nanostructure
|
Yao, I-Chuan; Lin, Pang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:00Z |
Second Phase and Defect Formation in Bi0.5Na0.5-xKxTiO3 Ceramics
|
Chen, Pin-Yi; Chou, Chen-Chia; Tseng, Tseung-Yuen; Chen, Haydn |
| 國立交通大學 |
2019-04-02T05:57:58Z |
Flexible solid-like electrolytes with ultrahigh conductivity and their applications in all-solid-state supercapacitors
|
Yang, Chih-Chieh; Lin, Hao-Yang; Kumar, Amit; Pattanayak, Bhaskar; Tsai, Hung-Yi; Winie, Tan; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:57:56Z |
Forming-free resistive switching behaviors in Cr-embedded Ga2O3 thin film memories
|
Lee, Dai-Ying; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:57:53Z |
High-speed and localized resistive switching characteristics of double-layer SrZrO3 memory devices
|
Lin, Meng-Han; Wu, Ming-Chi; Huang, Chun-Yang; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:57:52Z |
Robust unipolar resistive switching of Co nano-dots embedded ZrO2 thin film memories and their switching mechanism
|
Wu, Ming-Chi; Wu, Tsung-Han; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:57:09Z |
Solid Solubility Limited Dopant Activation of Group III Dopants (B, Ga & In) in Ge Targeting sub-7nm Node Low p plus Contact Resistance
|
Borland, John; Lee, Yao-Jen; Chuang, Shang-Shiun; Tseng, Tseung-Yuen; Liu, Chee-Wee; Huet, Karim; Goodman, Gary; Marino, John |
| 國立交通大學 |
2018-08-21T05:57:08Z |
High Performance Bipolar Resistive Switching Characteristics in SiO2/ZrO2/SiO2 Tri-layer Based CBRAM Device
|
Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:56:59Z |
A Comprehensive Study of 3-stage High Resistance State Retention Behavior for TMO ReRAMs from Single Cells to a Large Array
|
Lin, Yu-Hsuan; Ho, Yung-Han; Lee, Ming-Hsiu; Wang, Chao-Hung; Lin, Yu-Yu; Lee, Feng-Ming; Hsu, Kai-Chieh; Tseng, Po-Hao; Lee, Dai-Ying; Chiang, Kuang-Hao; Wang, Keh-Chung; Tseng, Tseung-Yuen; Lu, Chih-Yuan |
| 國立交通大學 |
2018-08-21T05:56:42Z |
The External Light Trapping for Perovskite Solar Cells Using Nanoimprinted Polymer Metamaterial Patterns
|
Lin, Albert; Fu, Sze Ming; Chen, Bo-Ruei; Yan, Sheng-Lun; Zhong, Yan Kai; Kao, Ming-Hsuan; Shen, Chang-Hong; Shieh, Jia-Min; Tseng, Tseung Yuen |
| 國立交通大學 |
2018-08-21T05:56:42Z |
The External Light Trapping Using Down-Conversion Polymer and Diffuse Trench Reflectors
|
Lin, Albert; Han, Hau-Vei; Huang, Chien-Yao; Chen, Bo-Ruei; Fu, Sze Ming; Zhong, Yan Kai; Kao, Ming-Hsuan; Shen, Chang-Hong; Shieh, Jia-Min; Lin, Chien-Chung; Kuo, Hao-Chung; Tseng, Tseung Yuen |
| 國立交通大學 |
2018-08-21T05:54:33Z |
In Situ TEM Investigation of the Electrochemical Behavior in CNTs/MnO2-Based Energy Storage Devices
|
Tsai, Tsung-Chun; Huang, Guan-Min; Huang, Chun-Wei; Chen, Jui-Yuan; Yang, Chih-Chieh; Tseng, Tseung-Yuen; Wu, Wen-Wei |
| 國立交通大學 |
2018-08-21T05:54:29Z |
Ultra-Shallow Junction Formation by Monolayer Doping Process in Single Crystalline Si and Ge for Future CMOS Devices
|
Chuang, Shang-Shiun; Cho, Ta-Chun; Sung, Po-Jung; Kao, Kuo-Hsing; Chen, Henry J. H.; Lee, Yao-Jen; Current, Michael I.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:54:29Z |
Preface
|
Tuan, Wei-Hsing; Chou, Chen-Chia; Tseng, Tseung-Yuen; Wang, Sea-Fue; Tseng, Wen-Jea; Shieh, Jay; Huang, Chi-Yuen; Chen, Jhewn-Kuang |
| 國立交通大學 |
2018-08-21T05:54:28Z |
Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell
|
Simanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Pattanayak, Bhaskar; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:54:23Z |
Ternary Au/ZnO/rGO nanocomposites electrodes for high performance electrochemical storage devices
|
Chaudhary, Manchal; Doong, Ruey-an; Kumar, Nagesh; Tseng, Tseung Yuen |
| 國立交通大學 |
2018-08-21T05:54:17Z |
Carbon Nanotube/Nitrogen-Doped Reduced Graphene Oxide Nanocomposites and Their Application in Supercapacitors
|
Yang, Chih-Chieh; Tsai, Meng-Han; Huang, Chun-Wei; Yen, Po-Jen; Pan, Chien-Chung; Wu, Wen-Wei; Wei, Kung-Hwa; Dung, Lan-Rong; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:54:10Z |
Fast-IV Measurement Investigation of the Role of TiN Gate Nitrogen Concentration on Bulk Traps in HfO2 Layer in p-MOSFETs
|
Lu, Ying-Hsin; Chang, Ting-Chang; Liao, Jih-Chien; Chen, Li-Hui; Lin, Yu-Shan; Chen, Ching-En; Liu, Kuan-Ju; Liu, Xi-Wen; Lin, Chien-Yu; Lien, Chen-Hsin; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Yen, Wei-Ting |
| 國立交通大學 |
2018-08-21T05:54:05Z |
Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al2O3 thin layer
|
Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:53:36Z |
Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layer
|
Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:53:36Z |
Role of Al2O3 thin layer on improving the resistive switching properties of Ta5Si3-based conductive bridge random accesses memory device
|
Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:53:18Z |
Conductive bridge random access memory characteristics of SiCN based transparent device due to indium diffusion
|
Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:53:14Z |
An ultra-compact blackbody using electrophoretic deposited carbon nanotube films
|
Lin, Albert; Yang, Chien-Chih; Parashar, Parag; Lin, Chien-Yung; Jian, Ding Rung; Huang, Wei-Ming; Huang, Yi-Wen; Fu, Sze Ming; Zhong, Yan Kai; Tseng, Tseung Yuen |
| 國立交通大學 |
2018-08-21T05:53:11Z |
A Collective Study on Modeling and Simulation of Resistive Random Access Memory
|
Panda, Debashis; Sahu, Paritosh Piyush; Tseng, Tseung Yuen |
| 國立交通大學 |
2018-08-21T05:53:08Z |
Facile synthesis of mesoporous NiFe2O4/CNTs nanocomposite cathode material for high performance asymmetric pseudocapacitors
|
Kumar, Nagesh; Kumar, Amit; Huang, Guan-Min; Wu, Wen-Wei; Tseng, Tseung Yuen |
| 國立交通大學 |
2018-08-21T05:52:56Z |
Endurance improvement and resistance stabilization of transparent multilayer resistance switching devices with oxygen deficient WOx layer and heat dissipating AlN buffer layer
|
Lin, Yu-Hsuan; Huang, Ding-Chiuan; Lou, Jen-Chung; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:52:55Z |
Dynamic observation of reversible lithium storage phenomena in hybrid supercapacitor devices
|
Huang, Guan-Min; Tsai, Tsung-Chun; Huang, Chun-Wei; Kumar, Nagesh; Tseng, Tseung-Yuen; Wu, Wen-Wei |
| 國立交通大學 |
2018-08-21T05:52:54Z |
Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell
|
Simanjuntak, Firman Mangasa; Singh, Pragya; Chandrasekaran, Sridhar; Lumbantoruan, Franky Juanda; Yang, Chih-Chieh; Huang, Chu-Jie; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:52:48Z |
Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory
|
Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Tsai, Tsung-Ling; Lin, Chun-An; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-01-24T07:40:31Z |
高導電度膠態電解液於固態超級電容之應用
|
林皓陽; 曾俊元; Lin, Hao-Yang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-01-24T07:40:30Z |
金屬氧化物選擇器搭配氧化鋯電阻式記憶體之特性研究
|
李承鴻; 曾俊元; Lee, Cheng-Hung; Tseng,Tseung-Yuen |
| 國立交通大學 |
2018-01-24T07:40:30Z |
氧化層雙向選擇器於電阻式記憶體之應用
|
楊敦智; 曾俊元; Yang, Tun-Chih; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-01-24T07:40:30Z |
單層氧化鎂選擇器應用於電阻式記憶體之研究
|
鄔晏澤; 曾俊元; Wu, Yan-ze; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-01-24T07:38:30Z |
納米電阻式記憶體導體特點的分析方法
|
白達磊; 曾俊元; berco, dan; Tseng,Tseung-Yuen |
| 國立交通大學 |
2018-01-24T07:38:03Z |
藉由電極調整及摻雜提升氧化鋅透明性電阻式記憶體電阻轉態特性
|
費玉滿; 曾俊元; 韋光華; FIRMAN, MANGASA SIMANJUNTAK; Tseng, Tseung-Yuen; Wei, Kung-Hwa |
| 國立交通大學 |
2018-01-24T07:37:07Z |
前瞻式金氧半場效電晶體之隨機電報訊號分析與熱載子劣化研究
|
陳慶恩; 曾俊元; 張鼎張; Chen, Ching-En; Tseng, Tseung-Yuen; Chang, Ting-Chang |
| 國立交通大學 |
2018-01-24T07:37:01Z |
利用碲為源層及增強阻障特性於氮化矽金屬導電橋接電阻式記憶體之可靠度優化研究
|
戴光駿; 曾俊元; Dai, Guang-Jyun; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-01-24T07:37:01Z |
二氧化鉿金屬橋樑電阻式記憶體之可靠度研究
|
黃楚傑; 曾俊元; Huang, Chu-Jie; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-01-24T07:37:01Z |
以電泳法沉積奈米碳管的電阻式記憶體之轉態特性研究
|
林千詠; 曾俊元; Lin, Chien-Yung; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-01-24T07:37:01Z |
三維多孔石墨烯/鎳鈷氧化物複合電極材料於 超級電容器之應用
|
李佳鴻; 曾俊元; Lee, Chia-Hong; Tseng, Tseung-Yuen |
| 國立交通大學 |
2017-04-21T06:56:40Z |
Enhanced Properties in Conductive-Bridge Resistive Switching Memory With Oxide-Nitride Bilayer Structure
|
Tsai, Tsung-Ling; Jiang, Fa-Shen; Ho, Chia-Hua; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2017-04-21T06:56:33Z |
Facile production of graphene nanosheets comprising nitrogen-doping through in situ cathodic plasma formation during electrochemical exfoliation
|
Yen, Po-Jen; Ting, Chao-Chi; Chiu, Yung-Chi; Tseng, Tseung-Yuen; Hsu, Yao-Jane; Wu, Wen-Wei; Wei, Kung-Hwa |
| 國立交通大學 |
2017-04-21T06:56:31Z |
Analysis of Oxide Trap Characteristics by Random Telegraph Signals in nMOSFETs With HfO2-Based Gate Dielectrics
|
Chen, Ching-En; Chang, Ting-Chang; You, Bo; Tsai, Jyun-Yu; Lo, Wen-Hung; Ho, Szu-Han; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Hung, Yu-Ju; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen |
| 國立交通大學 |
2017-04-21T06:56:20Z |
Effects of fabrication method on defects induced by nitrogen diffusion to the hafnium oxide layer in metal-oxide-semiconductor field effect transistors
|
Lu, Ying-Hsin; Chang, Ting-Chang; Ho, Szu-Han; Chen, Ching-En; Tsai, Jyun-Yu; Liu, Kuan-Ju; Liu, Xi-Wen; Lin, Chien-yu; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Yen, Wei-Ting |
| 國立交通大學 |
2017-04-21T06:56:20Z |
Impact of post-metal deposition annealing temperature on performance and reliability of high-K metal-gate n-FinFETs
|
Lin, Chien-Yu; Chang, Ting-Chang; Liu, Kuan-Ju; Tsai, Jyun-Yu; Chen, Ching-En; Liu, Hsi-Wen; Lu, Ying-Hsin; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung |
| 國立交通大學 |
2017-04-21T06:56:08Z |
Observing the evolution of graphene layers at high current density
|
Huang, Chun-Wei; Chen, Jui-Yuan; Chiu, Chung-Hua; Hsin, Cheng-Lun; Tseng, Tseung-Yuen; Wu, Wen-Wei |
| 國立交通大學 |
2017-04-21T06:55:58Z |
A Novel Varying-Bias Read Scheme for MLC and Wide Temperature Range TMO ReRAM
|
Lin, Yu-Hsuan; Lee, Ming-Hsiu; Wu, Jau-Yi; Lin, Yu-Yu; Lee, Feng-Ming; Lee, Dai-Ying; Chiang, Kuang-Hao; Lai, Erh-Kun; Tseng, Tseung-Yuen; Lu, Chih-Yuan |
显示项目 66-115 / 359 (共8页)
<< < 1 2 3 4 5 6 7 8 > >>
每页显示[10|25|50]项目
|
