| 國立交通大學 |
2015-07-21T08:31:27Z |
STABLE RESISTIVE SWITCHING CHARACTERISTICS OF Al2O3 LAYERS INSERTED IN HfPO2 BASED RRAM DEVICES
|
Huang, Chun-Yang; Jieng, Jheng-Hong; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-07-21T08:31:27Z |
IMPROVEMENT OF RESISTIVE SWITCHING PROPERTIES OF Ti/ZrO2/Pt WITH EMBEDDED GERMANIUM
|
Lin, Chun-An; Panda, Debashis; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-07-21T08:30:55Z |
Graphene/Carbon Nanotube/MnO2 Nanocomposite Based Asymmetric Pseudocapacitors
|
Hung, Chung Jung; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-07-21T08:29:39Z |
Suppression of endurance degradation by utilizing oxygen plasma treatment in HfO2 resistive switching memory
|
Chand, Umesh; Huang, Chun-Yang; Jieng, Jheng-Hong; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-07-21T08:29:32Z |
Investigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structure
|
Chand, Umesh; Huang, Kuan-Chang; Huang, Chun-Yang; Ho, Chia-Hua; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-07-21T08:29:17Z |
Unipolar resistive switching behaviors and mechanisms in an annealed Ni/ZrO2/TaN memory device
|
Tsai, Tsung-Ling; Ho, Tsung-Han; Tseng, Tseung-Yuen |
| 國立成功大學 |
2015 |
A Method to Determine the Located Region of Lateral Trap Position by Analysis of Three-Level Random Telegraph Signals in n-MOSFETs
|
Chen, Ching-En; Chang, Ting-Chang; You, Bo; Tsai, Jyun-Yu; Lo, Wen-Hung; Ho, Szu-Han; Liu, Kuan-Ju; Lu, Ying-Hsin; Hung, Yu-Ju; Tseng, Tseung-Yuen; Wu, James; Tsai, Wei-Kung; Chenge, Kuo-Yu; Syu, Yong-En |
| 國立成功大學 |
2015 |
The Impact of Pre/Post-metal Deposition Annealing on Negative-Bias-Temperature Instability in HfO2 Stack p-Channel Metal-Oxide-Semiconductor Field Effect Transistors
|
Lu, Ying-Hsin; Chang, Ting-Chang; Ho, Szu-Han; Chen, Ching-En; Tsai, Jyun-Yu; Liu, Kuan-Ju; Liu, Xi-Wen; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen |
| 國立交通大學 |
2014-12-16T08:15:20Z |
Handbook of nanoceramics and their based nanodevices. Sensors, fuel cells, and biomedical applicatio
|
Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-16T08:15:20Z |
Nonvolatile memory : materials, devices and applications
|
Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-16T08:15:20Z |
Nonvolatile memory : materials, devices and applications
|
Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-16T08:15:19Z |
Handbook of nanoceramics and their based nanodevices. synthesis and processing
|
Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-16T08:15:19Z |
Handbook of nanoceramics and their based nanodevices. Nanocomposites
|
Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-16T08:15:19Z |
Handbook of nanoceramics and their based nanodevices. Characterization and properties
|
Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-16T08:15:19Z |
Handbook of nanoceramics and their based nanodevices. Electronic applications
|
Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-16T06:16:01Z |
Gate controlled field emission triode and process for fabricating the same
|
Tseng, Tseung-Yuen; Lee, Chia-Ying; Li, Seu-Yi; Lin, Pang |
| 國立交通大學 |
2014-12-16T06:15:47Z |
Gate controlled field emission triode and process for fabricating the same
|
Tseng, Tseung-Yuan; Lee, Chia-Ying; Li, Seu-Yi; Lin, Pang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-16T06:15:24Z |
METHOD FOR FABRICATING A RESISTOR FOR A RESISTANCE RANDOM ACCESS MEMORY
|
TSENG Tseung-Yuen; Wang Sheng-Yu; Tsai Chen-Han |
| 國立交通大學 |
2014-12-16T06:14:01Z |
Method for fabricating a resistor for a resistance random access memory
|
Tseng Tseung-Yuen; Wang Sheng-Yu; Tsai Chen-Han |
| 國立交通大學 |
2014-12-13T10:51:13Z |
低成本高性能高可靠度先進氧化鋅奈米線場發射元件之研究
|
曾俊元; TSENG TSEUNG-YUEN |
| 國立交通大學 |
2014-12-13T10:50:46Z |
新世代電阻式非揮發性記憶元件之製作與特性研究
|
曾俊元; TSENG TSEUNG-YUEN |
| 國立交通大學 |
2014-12-13T10:48:23Z |
新世代電阻式非揮發性記憶元件之製作與特性研究
|
曾俊元; TSENG TSEUNG-YUEN |
| 國立交通大學 |
2014-12-13T10:47:21Z |
低成本高性能高可靠度先進氧化鋅奈米線場發射元件之研究
|
曾俊元; TSENG TSEUNG-YUEN |
| 國立交通大學 |
2014-12-13T10:47:04Z |
前瞻高能量超高電容器整合製程及其應用平台開發( I )
|
曾俊元; TSENG TSEUNG-YUEN |
| 國立交通大學 |
2014-12-13T10:46:02Z |
新穎透明電阻式記憶體元件於高密度與低功率消耗的非揮發性記憶體應用
|
曾俊元; TSENG TSEUNG-YUEN |
