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"tsui bing yue"
Showing items 6-15 of 150 (15 Page(s) Totally) 1 2 3 4 5 6 7 8 9 10 > >> View [10|25|50] records per page
| 國立交通大學 |
2020-04-01 |
Well-behaved 4H-SiC PMOSFET with LOCal oxidation of SiC (LOCOSiC) isolation structure and compromised gate oxide for Sub-10V SiC CMOS application
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Tsui, Bing-Yue; Hung, Chia-Lung |
| 國立交通大學 |
2020-02-02T23:55:33Z |
Thermal Stability of Shallow Ge N+-P Junction with Thin GeSn Top Layer
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Liao, Hsiu-Hsien; Chen, Yi-Ju; Tsui, Bing-Yue |
| 國立交通大學 |
2019-04-02T06:00:30Z |
High-Performance Metal-Insulator-Metal Capacitors With HfTiO/Y2O3 Stacked Dielectric
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Tsui, Bing-Yue; Hsu, Hsiao-Hsuan; Cheng, Chun-Hu |
| 國立交通大學 |
2019-04-02T05:59:58Z |
A comprehensive study on the oxidation of 4H-SiC in diluted N2O ambient
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Tseng, Yuan-Hung; Wu, Tsung-Han; Tsui, Bing-Yue; Yen, Cheng-Tyng; Hung, Chien-Chung; Lee, Chwan-Ying |
| 國立交通大學 |
2019-04-02T05:59:52Z |
High-Performance Poly-Si Nanowire Thin-Film Transistors Using the HfO2 Gate Dielectric
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Lee, Chen-Ming; Tsui, Bing-Yue |
| 國立交通大學 |
2019-04-02T05:58:59Z |
Effect of Ion-Implantation Temperature on Contact Resistance of Metal/n-Type 4H-SiC With Ar Plasma Treatment
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Tsui, Bing-Yue; Cheng, Jung-Chien |
| 國立交通大學 |
2019-04-02T05:58:38Z |
Effects of Rapid Thermal Annealing on Ar Inductively Coupled Plasma-Treated n-Type 4H-SiC Schottky and Ohmic Contacts
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Cheng, Jung-Chien; Tsui, Bing-Yue |
| 國立交通大學 |
2019-04-02T05:58:10Z |
A High-Performance 30-nm Gate-All-Around Poly-Si Nanowire Thin-Film Transistor With NH3 Plasma Treatment
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Lee, Chen-Ming; Tsui, Bing-Yue |
| 國立交通大學 |
2018-08-21T05:57:09Z |
A Comprehensive Evaluation of the Performance of Fin-type Epitaxial Tunnel Layer (ETL) Tunnel FET
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Lin, Po-Shao; Tsui, Bing-Yue |
| 國立交通大學 |
2018-08-21T05:57:09Z |
Effects of Vanadium Incorporation on the Electron Schottky Barrier Height Reduction of NiGe/Ge
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Chen, Yi-Ju; Tsui, Bing-Yue |
Showing items 6-15 of 150 (15 Page(s) Totally) 1 2 3 4 5 6 7 8 9 10 > >> View [10|25|50] records per page
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