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Institution Date Title Author
國立交通大學 2020-04-01 Well-behaved 4H-SiC PMOSFET with LOCal oxidation of SiC (LOCOSiC) isolation structure and compromised gate oxide for Sub-10V SiC CMOS application Tsui, Bing-Yue; Hung, Chia-Lung
國立交通大學 2020-02-02T23:55:33Z Thermal Stability of Shallow Ge N+-P Junction with Thin GeSn Top Layer Liao, Hsiu-Hsien; Chen, Yi-Ju; Tsui, Bing-Yue
國立交通大學 2019-04-02T06:00:30Z High-Performance Metal-Insulator-Metal Capacitors With HfTiO/Y2O3 Stacked Dielectric Tsui, Bing-Yue; Hsu, Hsiao-Hsuan; Cheng, Chun-Hu
國立交通大學 2019-04-02T05:59:58Z A comprehensive study on the oxidation of 4H-SiC in diluted N2O ambient Tseng, Yuan-Hung; Wu, Tsung-Han; Tsui, Bing-Yue; Yen, Cheng-Tyng; Hung, Chien-Chung; Lee, Chwan-Ying
國立交通大學 2019-04-02T05:59:52Z High-Performance Poly-Si Nanowire Thin-Film Transistors Using the HfO2 Gate Dielectric Lee, Chen-Ming; Tsui, Bing-Yue
國立交通大學 2019-04-02T05:58:59Z Effect of Ion-Implantation Temperature on Contact Resistance of Metal/n-Type 4H-SiC With Ar Plasma Treatment Tsui, Bing-Yue; Cheng, Jung-Chien
國立交通大學 2019-04-02T05:58:38Z Effects of Rapid Thermal Annealing on Ar Inductively Coupled Plasma-Treated n-Type 4H-SiC Schottky and Ohmic Contacts Cheng, Jung-Chien; Tsui, Bing-Yue
國立交通大學 2019-04-02T05:58:10Z A High-Performance 30-nm Gate-All-Around Poly-Si Nanowire Thin-Film Transistor With NH3 Plasma Treatment Lee, Chen-Ming; Tsui, Bing-Yue
國立交通大學 2018-08-21T05:57:09Z A Comprehensive Evaluation of the Performance of Fin-type Epitaxial Tunnel Layer (ETL) Tunnel FET Lin, Po-Shao; Tsui, Bing-Yue
國立交通大學 2018-08-21T05:57:09Z Effects of Vanadium Incorporation on the Electron Schottky Barrier Height Reduction of NiGe/Ge Chen, Yi-Ju; Tsui, Bing-Yue

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