|
English
|
正體中文
|
简体中文
|
總筆數 :2853327
|
|
造訪人次 :
45034465
線上人數 :
1870
教育部委託研究計畫 計畫執行:國立臺灣大學圖書館
|
|
|
"tsui bing yue"的相關文件
顯示項目 6-15 / 150 (共15頁)
1 2 3 4 5 6 7 8 9 10 > >>
每頁顯示[10|25|50]項目
| 國立交通大學 |
2020-04-01 |
Well-behaved 4H-SiC PMOSFET with LOCal oxidation of SiC (LOCOSiC) isolation structure and compromised gate oxide for Sub-10V SiC CMOS application
|
Tsui, Bing-Yue; Hung, Chia-Lung |
| 國立交通大學 |
2020-02-02T23:55:33Z |
Thermal Stability of Shallow Ge N+-P Junction with Thin GeSn Top Layer
|
Liao, Hsiu-Hsien; Chen, Yi-Ju; Tsui, Bing-Yue |
| 國立交通大學 |
2019-04-02T06:00:30Z |
High-Performance Metal-Insulator-Metal Capacitors With HfTiO/Y2O3 Stacked Dielectric
|
Tsui, Bing-Yue; Hsu, Hsiao-Hsuan; Cheng, Chun-Hu |
| 國立交通大學 |
2019-04-02T05:59:58Z |
A comprehensive study on the oxidation of 4H-SiC in diluted N2O ambient
|
Tseng, Yuan-Hung; Wu, Tsung-Han; Tsui, Bing-Yue; Yen, Cheng-Tyng; Hung, Chien-Chung; Lee, Chwan-Ying |
| 國立交通大學 |
2019-04-02T05:59:52Z |
High-Performance Poly-Si Nanowire Thin-Film Transistors Using the HfO2 Gate Dielectric
|
Lee, Chen-Ming; Tsui, Bing-Yue |
| 國立交通大學 |
2019-04-02T05:58:59Z |
Effect of Ion-Implantation Temperature on Contact Resistance of Metal/n-Type 4H-SiC With Ar Plasma Treatment
|
Tsui, Bing-Yue; Cheng, Jung-Chien |
| 國立交通大學 |
2019-04-02T05:58:38Z |
Effects of Rapid Thermal Annealing on Ar Inductively Coupled Plasma-Treated n-Type 4H-SiC Schottky and Ohmic Contacts
|
Cheng, Jung-Chien; Tsui, Bing-Yue |
| 國立交通大學 |
2019-04-02T05:58:10Z |
A High-Performance 30-nm Gate-All-Around Poly-Si Nanowire Thin-Film Transistor With NH3 Plasma Treatment
|
Lee, Chen-Ming; Tsui, Bing-Yue |
| 國立交通大學 |
2018-08-21T05:57:09Z |
A Comprehensive Evaluation of the Performance of Fin-type Epitaxial Tunnel Layer (ETL) Tunnel FET
|
Lin, Po-Shao; Tsui, Bing-Yue |
| 國立交通大學 |
2018-08-21T05:57:09Z |
Effects of Vanadium Incorporation on the Electron Schottky Barrier Height Reduction of NiGe/Ge
|
Chen, Yi-Ju; Tsui, Bing-Yue |
顯示項目 6-15 / 150 (共15頁)
1 2 3 4 5 6 7 8 9 10 > >>
每頁顯示[10|25|50]項目
|
