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Showing items 1-5 of 5 (1 Page(s) Totally)
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| 國立臺灣科技大學 |
2015 |
Temperature-dependent electrical properties of the sputtering-made n-InGaN/p-GaN junction diode with a breakdown voltage above 20 V
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Tuan, T.T.A.;Kuo, D.-H. |
| 國立臺灣科技大學 |
2015 |
Effects of Mg Doping on the Performance of InGaN Films Made by Reactive Sputtering
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Kuo, D.-H.;Li, C.-C.;Tuan, T.T.A.;Yen, W.-C. |
| 國立臺灣科技大學 |
2015 |
Temperature dependence of electrical characteristics of n-InxGa1 - XN/p-Si hetero-junctions made totally by RF magnetron sputtering
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Tuan, T.T.A.;Kuo, D.-H.;Lin, K.;Li, G.-Z. |
| 國立臺灣科技大學 |
2014 |
Effects of Mg Doping on the Performance of InGaN Films Made by Reactive Sputtering
|
Kuo, D.-H.;Li, C.-C.;Tuan, T.T.A.;Yen, W.-C. |
| 國立臺灣科技大學 |
2014 |
Schottky barrier characteristics of Pt contacts to all sputtering-made n-type GaN and MOS diodes
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Tuan, T.T.A.;Kuo, D.-H.;Li, C.-C.;Yen, W.-C. |
Showing items 1-5 of 5 (1 Page(s) Totally)
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