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Taiwan Academic Institutional Repository >
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"yang 楊紹明 shao ming"
Showing items 11-19 of 19 (1 Page(s) Totally)
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| 亞洲大學 |
2015-03 |
High Voltage NLDMOS with Multiple-RESURF Structure to Achieve Improved On-resistance
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Yang)*, 楊紹明(Shao-Ming;EP), Hema EP(Hema;Mrinal), Aryadeep Mri(Aryadeep;Sheu), 許健(Gene;Chen), 陳柏安(PA |
| 亞洲大學 |
2015-03 |
A HSPICE Macro Model for the ESD Behavior of Gate Grounded NMOS and Gate coupled NMOS
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Yang), 楊紹明(Shao-Ming;EP), Hema EP(Hema;Sheu), 許健(Gene;Mrinal), Aryadeep Mri(Aryadeep;Amanullah), Md. Amanulla(Md.;Chen), 陳柏安(PA |
| 亞洲大學 |
2015-03 |
A NOVEL HSPICE MACRO MODEL FOR THE ESD BEHAVIOR BEHAVIOR BEHAVIOR BEHAVIOR OF GATE
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Yang), 楊紹明(Shao-Ming;Chen, P.A;Sheu), 許健(Gene |
| 亞洲大學 |
2015-03 |
Reliability Analysis of Amorphous Silicon Thin-Film Transistors during Accelerated ESD
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蔡宗叡(TSAI, JUNG-RUEY);Yang), 楊紹明(Shao-Ming;Sheu), 許健(Gene |
| 亞洲大學 |
2015-03 |
Negative e-beam resists using for nano-imprint lithography and silicone mold fabrication
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Anil Kumar, (Anil Kumar, T.V.);Shy, S.L(Shy, S.L);Sheu), 許健(Gene;Yang), 楊紹明(Shao-Ming;Chen, M.C.(Chen, M.C.);Hong, C.S.(Hong, C.S.) |
| 亞洲大學 |
2015-03 |
HIGH VOLTAGE VOLTAGE VOLTAGE NLDMOS WITH MULTIPLE-RESURF MULTIPLE-RESURF MULTIPLE-RESURF ULTIPLE-RESURF STRUCTURE STRUCTURE STRUCTURE TRUCTURE TO
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Yang), 楊紹明(Shao-Ming;hema;aryadeep;Sheu), 許健(Gene |
| 亞洲大學 |
2015-03 |
.Negative e-beam resists using for nano-imprint lithography and silicone mold fabricatio
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Shy, S.L;Sheu), 許健(Gene;Yang), 楊紹明(Shao-Ming;Chen, M.C |
| 亞洲大學 |
2015 |
Simulation of P-type Doping Profile Prediction Using.Applied Mechanics and Materials
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Vivek(Vivek);Antonious(Antonious);Sheu), 許健(Gene;erry(erry);Yang), 楊紹明(Shao-Ming |
| 亞洲大學 |
2015 |
Optimization of Holding Voltage for 5V multi-finger NMOS using Voltage stepping simulation
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ARYADEEP(ARYADEEP);Sheu), 許健(Gene;Yang), 楊紹明(Shao-Ming;AUNNY(AUNNY);王俊博;Amanulla(Amanulla) |
Showing items 11-19 of 19 (1 Page(s) Totally)
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