|
|
???tair.name??? >
???browser.page.title.author???
|
"yang tsung hsi"???jsp.browse.items-by-author.description???
Showing items 1-18 of 18 (1 Page(s) Totally)
1
View [10|25|50] records per page
| 國立交通大學 |
2019-04-02T06:01:07Z |
GaN growth on Si(111) using simultaneous AlN/alpha-Si3N4 buffer structure
|
Chang, Jet Rung; Yang, Tsung Hsi; Ku, Jui Tai; Shen, Shih Guo; Chen, Yi Cheng; Wong, Yuen Yee; Chang, Chun Yen |
| 國立交通大學 |
2014-12-16T06:16:17Z |
Growth of GaAs epitaixial layers on Si substrate by using a novel GeSi buffer layer
|
Chang, Edward Y.; Luo, Guangli; Yang, Tsung Hsi; Chang, Chung Yen |
| 國立交通大學 |
2014-12-16T06:16:05Z |
Growth of GaAs expitaxial layers on Si substrate by using a novel GeSi buffer layer
|
Chang, Edward Y.; Luo, Guangli; Yang, Tsung-Hsi; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-16T06:16:04Z |
Architecture of a n-type metal-oxide-semiconductor transistor with a compressive strained silicon-germanium channel fabricated on a silicon (110) substrate
|
Luo, Guangli; Chien, Chao-Hsin; Yang, Tsung-Hsi; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-16T06:15:50Z |
Method for forming III-nitrides semiconductor epilayer on the semiconductor substrate
|
Chang, Chun-Yen; Yang, Tsung-Hsi; Shen, Shih-Guo |
| 國立交通大學 |
2014-12-16T06:15:44Z |
Light emitting device and fabrication method therefor
|
Chang, Chun-Yen; Yang, Tsung Hsi |
| 國立交通大學 |
2014-12-16T06:14:19Z |
Light emitter device
|
Chang Chun-Yen; Yang Tsung Hsi |
| 國立交通大學 |
2014-12-08T15:29:44Z |
Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy
|
Wong, Yuen-Yee; Chang, Edward Yi; Wu, Yue-Han; Hudait, Mantu K.; Yang, Tsung-Hsi; Chang, Jet-Rung; Ku, Jui-Tai; Chou, Wu-Ching; Chen, Chiang-Yao; Maa, Jer-Shen; Lin, Yueh-Chin |
| 國立交通大學 |
2014-12-08T15:23:27Z |
Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN Templates
|
Wong, Yuen-Yee; Huang, Wei-Ching; Trinh, Hai-Dang; Yang, Tsung-Hsi; Chang, Jet-Rung; Chen, Micheal; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:15:35Z |
Growth behaviour of Ge nano-islands on the nanosized Si{111} facets bordering on two {100} planes
|
Ferng, Shyh-Shin; Yang, Tsung-Hsi; Luo, Guangli; Yang, Kai-Ming; Hsieh, Ming-Feng; Lin, Deng-Sung |
| 國立交通大學 |
2014-12-08T15:14:16Z |
High-speed GaAs metal gate semiconductor field effect transistor structure grown on a composite Ge/Ge(x)Si(1-x)/Si substrate
|
Luo, Guang-Li; Hsieh, Yen-Chang; Chang, Edward Yi; Pilkuhn, M. H.; Chien, Chao-Hsin; Yang, Tsung-Hsi; Cheng, Chao-Ching; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:11:14Z |
GaN growth on Si(111) using simultaneous AlN/alpha-Si(3)N(4) buffer structure
|
Chang, Jet Rung; Yang, Tsung Hsi; Ku, Jui Tai; Shen, Shih Guo; Chen, Yi Cheng; Wong, Yuen Yee; Chang, Chun Yen |
| 國立交通大學 |
2014-12-08T15:09:52Z |
The effect of AlN buffer growth parameters on the defect structure of GaN grown on sapphire by plasma-assisted molecular beam epitaxy
|
Wong, Yuen-Yee; Chang, Edward Yi; Yang, Tsung-Hsi; Chang, Jet-Rung; Chen, Yi-Cheng; Ku, Jui-Tai; Lee, Ching-Ting; Chang, Chun-Wei |
| 國立交通大學 |
2014-12-08T15:09:46Z |
Growth of free-standing GaN layer on Si(111) substrate
|
Yang, Tsung Hsi; Ku, Jui Tai; Chang, Jet-Rung; Shen, Shih-Guo; Chen, Yi-Cheng; Wong, Yuen Yee; Chou, Wu Ching; Chen, Chien-Ying; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:07:51Z |
The Roles of Threading Dislocations on Electrical Properties of AlGaN/GaN Heterostructure Grown by MBE
|
Wong, Yuen-Yee; Chang, Edward Yi; Yang, Tsung-Hsi; Chang, Jet-Rung; Ku, Jui-Tai; Hudait, Mantu K.; Chou, Wu-Ching; Chen, Micheal; Lin, Kung-Liang |
| 國立交通大學 |
2014-12-08T15:07:41Z |
Epitaxial Overgrowth of Gallium Nitride Nano-Rods on Silicon (111) Substrates by RF-Plasma-Assisted Molecular Beam Epitaxy
|
Ku, Jui-Tai; Yang, Tsung-Hsi; Chang, Jet-Rung; Wong, Yuen-Yee; Chou, Wu-Ching; Chang, Chun-Yen; Chen, Chiang-Yao |
| 國立交通大學 |
2014-12-08T15:01:23Z |
Dependence of GaN Defect Structure on the Growth Temperature of the AlN Buffer Layer
|
Wong, Yuen-Yee; Chang, Edward Yi; Yang, Tsung-Hsi; Chang, Jet-Rung; Chen, Yi-Cheng; Ku, Jui-Tai |
| 國立成功大學 |
2009-03-01 |
The effect of AlN buffer growth parameters on the defect structure of GaN grown on sapphire by plasma-assisted molecular beam epitaxy
|
Wong, Yuen-Yee; Chang, Edward Yi; Yang, Tsung-Hsi; Chang, Jet-Rung; Chen, Yi-Cheng; Ku, Jui-Tai; Lee, Ching-Ting; Chang, Chun-Wei |
Showing items 1-18 of 18 (1 Page(s) Totally)
1
View [10|25|50] records per page
|
