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Showing items 1-4 of 4 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:04:20Z |
EXPERIMENTAL COMPARISON OF OFF-STATE CURRENT BETWEEN HIGH-TEMPERATURE-PROCESSED AND LOW-TEMPERATURE-PROCESSED UNDOPED CHANNEL POLYSILICON THIN-FILM TRANSISTORS
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YEH, CF; YANG, TZ; CHEN, CL; CHEN, TJ; YANG, YC |
| 國立交通大學 |
2014-12-08T15:04:07Z |
PERFORMANCE AND OFF-STATE CURRENT MECHANISMS OF LOW-TEMPERATURE PROCESSED POLYSILICON THIN-FILM TRANSISTORS WITH LIQUID-PHASE DEPOSITED SIO2 GATE INSULATOR
|
YEH, CF; LIN, SS; YANG, TZ; CHEN, CL; YANG, YC |
| 國立交通大學 |
2014-12-08T15:04:04Z |
LOW-TEMPERATURE-PROCESSED POLY-SI THIN-FILM TRANSISTORS USING SOLID-PHASE-CRYSTALLIZED AND LIQUID-PHASE-DEPOSITED GATE OXIDE
|
YEH, CF; CHEN, CL; YANG, YC; LIN, SS; YANG, TZ; HONG, TY |
| 國立交通大學 |
2014-12-08T15:03:33Z |
CHARACTERISTICS OF SELF-INDUCED LIGHTLY-DOPED-DRAIN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS WITH LIQUID-PHASE DEPOSITION SIO2 AS GATE-INSULATOR AND PASSIVATION-LAYER
|
YEH, CF; YANG, TZ; CHEN, TJ |
Showing items 1-4 of 4 (1 Page(s) Totally)
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