|
|
Taiwan Academic Institutional Repository >
Browse by Author
|
"yeh th"
Showing items 11-35 of 66 (3 Page(s) Totally)
1 2 3 > >>
View [10|25|50] records per page
| 國立交通大學 |
2014-12-08T15:48:52Z |
The relaxation phenomena of positive charges in thin gate oxide during Fowler-Nordheim tunneling stress
|
Chang, KM; Li, CH; Wang, SW; Yeh, TH; Yang, JY; Lee, TC |
| 國立交通大學 |
2014-12-08T15:46:52Z |
Thermal stability of amorphous-like WNx/W bilayered diffusion barrier for chemical vapor deposited-tungsten/p(+)-Si contact system
|
Chang, KM; Deng, IC; Yeh, TH; Lain, KD; Fu, CM |
| 國立交通大學 |
2014-12-08T15:46:27Z |
Barrier characteristics of chemical vapor deposited amorphous-like tungsten silicide with in situ nitrogen plasma treatment
|
Chang, KM; Deng, IC; Yeh, TH; Shih, CW |
| 國立交通大學 |
2014-12-08T15:27:43Z |
Reactive ion etching of compound semiconductors grown by MOCVD technique with BCl3/SF6/Ar mixtures
|
Chang, KM; Tsai, JY; Yeh, CB; Yeh, TH; Wang, SW; Jou, MJ |
| 國立交通大學 |
2014-12-08T15:27:04Z |
Suppress copper diffusion through barrier metal-free hydrogen silisequioxane dielectrics by using NH3 plasma treatment
|
Chang, KM; Deng, IC; Yeh, SJ; Yeh, TH |
| 國立交通大學 |
2014-12-08T15:19:22Z |
Design of microstrip bandpass filters with a dual-passband response
|
Kuo, JT; Yeh, TH; Yeh, CC |
| 國立交通大學 |
2014-12-08T15:17:17Z |
Risk factors to driver fatalities in single-vehicle crashes: Comparisons between non-motorcycle drivers and motorcyclists
|
Chang, HL; Yeh, TH |
| 國立交通大學 |
2014-12-08T15:04:06Z |
ACTIVITY-COEFFICIENTS OF ELECTRONS AND HOLES IN DEGENERATE SEMICONDUCTORS WITH NONUNIFORM COMPOSITION
|
CHANG, KM; YEH, TH; WANG, SW; LEE, CH |
| 國立交通大學 |
2014-12-08T15:03:41Z |
A SIMPLE AND EFFICIENT PRETREATMENT TECHNOLOGY FOR SELECTIVE TUNGSTEN DEPOSITION IN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION REACTOR
|
CHANG, KM; YEH, TH; LI, CH; WANG, SW |
| 國立交通大學 |
2014-12-08T15:02:36Z |
Effects of gas ratio on electrical properties of electron-cyclotron-resonance nitride films grown at room temperature
|
Chang, KM; Tsai, JY; Li, CH; Yeh, TH; Wang, SW; Yang, JY |
| 國立交通大學 |
2014-12-08T15:02:31Z |
Dry etching of polysilicon with high selectivity using a chlorine-based plasma in an ECR reactor
|
Chang, KM; Yeh, TH; Wang, SW; Li, CH; Yang, JY |
| 國立交通大學 |
2014-12-08T15:02:25Z |
Influences of deposition temperature on thermal stability and moisture resistance of chemical vapor deposited fluorinated silicon oxide by using indirect fluorinating precursor
|
Chang, KM; Wang, SW; Wu, CJ; Yeh, TH; Li, CH; Yang, JY |
| 國立交通大學 |
2014-12-08T15:02:24Z |
Influences of damage and contamination from reactive ion etching on selective tungsten deposition in a low-pressure chemical-vapor-deposition reactor
|
Chang, KM; Yeh, TH; Wang, SW; Li, CH |
| 國立交通大學 |
2014-12-08T15:02:22Z |
Highly selective etching for polysilicon and etch-induced damage to gate oxide with halogen-bearing electron-cyclotron-resonance plasma
|
Chang, KM; Yeh, TH; Deng, IC; Lin, HC |
| 國立交通大學 |
2014-12-08T15:02:13Z |
Comprehensive study of plasma pretreatment process for thin gate oxide (<10 nm) fabricated by electron cyclotron resonance plasma oxidation
|
Chang, KM; Li, CH; Fahn, FJ; Yeh, TH; Wang, SW |
| 國立交通大學 |
2014-12-08T15:02:13Z |
Reduction of selectivity loss probability on dielectric surface during chemical vapor deposition of tungsten using fluorinated oxide and removing silanol units on dielectric surface
|
Chang, KM; Wang, SW; Li, CH; Tsai, JY; Yeh, TH |
| 國立交通大學 |
2014-12-08T15:02:10Z |
Characteristics of selective chemical vapor deposition of tungsten on aluminum with a vapor phase precleaning technology
|
Chang, KM; Yeh, TH; Wang, SW; Li, CH |
| 國立交通大學 |
2014-12-08T15:02:10Z |
The influence of precleaning process on the gate oxide film fabricated by electron cyclotron resonance plasma oxidation
|
Chang, KM; Li, CH; Fahn, FJ; Tsai, JY; Yeh, TH; Wang, SW; Yang, JY |
| 國立交通大學 |
2014-12-08T15:01:59Z |
SiH4-WF6 gas-phase nucleated tungsten as an adhesion layer in blanket chemical vapor deposition for ultralarge scale integration
|
Chang, KM; Yeh, TH; Wang, SW; Li, CH |
| 國立交通大學 |
2014-12-08T15:01:54Z |
Suppression of fluorine impurity in blanket chemical vapor deposited tungsten film for via fills with a novel two-step deposition technique
|
Chang, KM; Yeh, TH; Lain, KD; Fu, CM |
| 國立交通大學 |
2014-12-08T15:01:50Z |
Leakage performance and breakdown mechanism of silicon-rich oxide and fluorinated oxide prepared by electron cyclotron resonance chemical vapor deposition
|
Chang, KM; Wang, SW; Yeh, TH; Li, CH; Luo, JJ |
| 國立交通大學 |
2014-12-08T15:01:50Z |
Nitridation of fine grain chemical vapor deposited tungsten film as diffusion barrier for aluminum metallization
|
Chang, KM; Yeh, TH; Deng, IC |
| 國立交通大學 |
2014-12-08T15:01:46Z |
Effect of adding Ar on the thermal stability of chemical vapor deposited fluorinated silicon oxide using an indirect fluorinating precursor
|
Chang, KM; Wang, SW; Li, CH; Yeh, TH; Yang, JY |
| 國立交通大學 |
2014-12-08T15:01:32Z |
Amorphouslike chemical vapor deposited tungsten diffusion barrier for copper metallization and effects of nitrogen addition
|
Chang, KM; Yeh, TH; Deng, IC; Shih, CW |
| 國家衛生研究院 |
2013-02 |
Epstein-Barr virus Zta upregulates matrix metalloproteinases 3 and 9 that synergistically promote cell invasion in vitro
|
Lan, YY;Yeh, TH;Lin, WH;Wu, SY;Lai, HC;Chang, FH;Takada, K;Chang, Y |
Showing items 11-35 of 66 (3 Page(s) Totally)
1 2 3 > >>
View [10|25|50] records per page
|
