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机构 日期 题名 作者
國立交通大學 2014-12-08T15:48:52Z The relaxation phenomena of positive charges in thin gate oxide during Fowler-Nordheim tunneling stress Chang, KM; Li, CH; Wang, SW; Yeh, TH; Yang, JY; Lee, TC
國立交通大學 2014-12-08T15:46:52Z Thermal stability of amorphous-like WNx/W bilayered diffusion barrier for chemical vapor deposited-tungsten/p(+)-Si contact system Chang, KM; Deng, IC; Yeh, TH; Lain, KD; Fu, CM
國立交通大學 2014-12-08T15:46:27Z Barrier characteristics of chemical vapor deposited amorphous-like tungsten silicide with in situ nitrogen plasma treatment Chang, KM; Deng, IC; Yeh, TH; Shih, CW
國立交通大學 2014-12-08T15:27:43Z Reactive ion etching of compound semiconductors grown by MOCVD technique with BCl3/SF6/Ar mixtures Chang, KM; Tsai, JY; Yeh, CB; Yeh, TH; Wang, SW; Jou, MJ
國立交通大學 2014-12-08T15:27:04Z Suppress copper diffusion through barrier metal-free hydrogen silisequioxane dielectrics by using NH3 plasma treatment Chang, KM; Deng, IC; Yeh, SJ; Yeh, TH
國立交通大學 2014-12-08T15:19:22Z Design of microstrip bandpass filters with a dual-passband response Kuo, JT; Yeh, TH; Yeh, CC
國立交通大學 2014-12-08T15:17:17Z Risk factors to driver fatalities in single-vehicle crashes: Comparisons between non-motorcycle drivers and motorcyclists Chang, HL; Yeh, TH
國立交通大學 2014-12-08T15:04:06Z ACTIVITY-COEFFICIENTS OF ELECTRONS AND HOLES IN DEGENERATE SEMICONDUCTORS WITH NONUNIFORM COMPOSITION CHANG, KM; YEH, TH; WANG, SW; LEE, CH
國立交通大學 2014-12-08T15:03:41Z A SIMPLE AND EFFICIENT PRETREATMENT TECHNOLOGY FOR SELECTIVE TUNGSTEN DEPOSITION IN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION REACTOR CHANG, KM; YEH, TH; LI, CH; WANG, SW
國立交通大學 2014-12-08T15:02:36Z Effects of gas ratio on electrical properties of electron-cyclotron-resonance nitride films grown at room temperature Chang, KM; Tsai, JY; Li, CH; Yeh, TH; Wang, SW; Yang, JY
國立交通大學 2014-12-08T15:02:31Z Dry etching of polysilicon with high selectivity using a chlorine-based plasma in an ECR reactor Chang, KM; Yeh, TH; Wang, SW; Li, CH; Yang, JY
國立交通大學 2014-12-08T15:02:25Z Influences of deposition temperature on thermal stability and moisture resistance of chemical vapor deposited fluorinated silicon oxide by using indirect fluorinating precursor Chang, KM; Wang, SW; Wu, CJ; Yeh, TH; Li, CH; Yang, JY
國立交通大學 2014-12-08T15:02:24Z Influences of damage and contamination from reactive ion etching on selective tungsten deposition in a low-pressure chemical-vapor-deposition reactor Chang, KM; Yeh, TH; Wang, SW; Li, CH
國立交通大學 2014-12-08T15:02:22Z Highly selective etching for polysilicon and etch-induced damage to gate oxide with halogen-bearing electron-cyclotron-resonance plasma Chang, KM; Yeh, TH; Deng, IC; Lin, HC
國立交通大學 2014-12-08T15:02:13Z Comprehensive study of plasma pretreatment process for thin gate oxide (<10 nm) fabricated by electron cyclotron resonance plasma oxidation Chang, KM; Li, CH; Fahn, FJ; Yeh, TH; Wang, SW
國立交通大學 2014-12-08T15:02:13Z Reduction of selectivity loss probability on dielectric surface during chemical vapor deposition of tungsten using fluorinated oxide and removing silanol units on dielectric surface Chang, KM; Wang, SW; Li, CH; Tsai, JY; Yeh, TH
國立交通大學 2014-12-08T15:02:10Z Characteristics of selective chemical vapor deposition of tungsten on aluminum with a vapor phase precleaning technology Chang, KM; Yeh, TH; Wang, SW; Li, CH
國立交通大學 2014-12-08T15:02:10Z The influence of precleaning process on the gate oxide film fabricated by electron cyclotron resonance plasma oxidation Chang, KM; Li, CH; Fahn, FJ; Tsai, JY; Yeh, TH; Wang, SW; Yang, JY
國立交通大學 2014-12-08T15:01:59Z SiH4-WF6 gas-phase nucleated tungsten as an adhesion layer in blanket chemical vapor deposition for ultralarge scale integration Chang, KM; Yeh, TH; Wang, SW; Li, CH
國立交通大學 2014-12-08T15:01:54Z Suppression of fluorine impurity in blanket chemical vapor deposited tungsten film for via fills with a novel two-step deposition technique Chang, KM; Yeh, TH; Lain, KD; Fu, CM
國立交通大學 2014-12-08T15:01:50Z Leakage performance and breakdown mechanism of silicon-rich oxide and fluorinated oxide prepared by electron cyclotron resonance chemical vapor deposition Chang, KM; Wang, SW; Yeh, TH; Li, CH; Luo, JJ
國立交通大學 2014-12-08T15:01:50Z Nitridation of fine grain chemical vapor deposited tungsten film as diffusion barrier for aluminum metallization Chang, KM; Yeh, TH; Deng, IC
國立交通大學 2014-12-08T15:01:46Z Effect of adding Ar on the thermal stability of chemical vapor deposited fluorinated silicon oxide using an indirect fluorinating precursor Chang, KM; Wang, SW; Li, CH; Yeh, TH; Yang, JY
國立交通大學 2014-12-08T15:01:32Z Amorphouslike chemical vapor deposited tungsten diffusion barrier for copper metallization and effects of nitrogen addition Chang, KM; Yeh, TH; Deng, IC; Shih, CW
國家衛生研究院 2013-02 Epstein-Barr virus Zta upregulates matrix metalloproteinases 3 and 9 that synergistically promote cell invasion in vitro Lan, YY;Yeh, TH;Lin, WH;Wu, SY;Lai, HC;Chang, FH;Takada, K;Chang, Y

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