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Showing items 1973076-1973085 of 2346473  (234648 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 2018-09-10T05:23:44Z Threading dislocation induced low frequency noise in strained-Si nMOSFETs Hua, W.-C.; Lee, M.H.; Chen, P.S.; Tsai, M.-J.; Liu, C.W.; CHEE-WEE LIU
臺大學術典藏 2018-09-10T05:23:44Z The characteristic of HfO2 on strained SiGe Chen, T.C.; Lee, L.S.; Lai, W.Z.; Liu, C.W.; CHEE-WEE LIU
臺大學術典藏 2018-09-10T05:23:44Z Strained CMOS technology with Ge Chen, P.S.; Lee, M.H.; Lee, S.W.; Liu, C.W.; Tsai, M.-J.; CHEE-WEE LIU
臺大學術典藏 2018-09-10T05:23:44Z SiGe/Si PMOSFET using graded channel technique Lin, Y.M.; Wu, S.L.; Chang, S.J.; Chen, P.S.; Liu, C.W.; CHEE-WEE LIU
臺大學術典藏 2018-09-10T05:23:44Z Visible photoluminescence from Ge quantum dots Sun, K.W.; Sue, S.H.; Liu, C.W.; CHEE-WEE LIU
臺大學術典藏 2018-09-10T05:23:45Z Novel schottky barrier strained germanium PMOS Peng, C.-Y.; Yuan, F.; Lee, M.H.; Yu, C.-Y.; Maikap, S.; Liao, M.H.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU
臺大學術典藏 2018-09-10T05:23:45Z Mobility-enhancement technologies Liu, C.W.; Maikap, S.; Yu, C.-Y.; Liu, Chee Wee
臺大學術典藏 2018-09-10T05:23:45Z High-linearity and temperature-insensitive 2.4 GHz SiGe power amplifier with dynamic-bias control Hua, Wei-Chun; Lai, Hung-Hui; Lin, Po-Tsung; Liu, Chee Wee; Yang, Tzu-Yi; Ma, Gin-Kou; CHEE-WEE LIU
臺大學術典藏 2018-09-10T05:23:45Z Buckled SiGe layers by the oxidation of SiGe on viscous SiO2 layers Yu, C.-Y.; Chen, P.-W.; Jan, S.-R.; Liao, M.-H.; Liao, K.-F.; Liu, C.W.; CHEE-WEE LIU
臺大學術典藏 2018-09-10T05:23:46Z Abnormal hole mobility of biaxial strained Si Liao, M.H.; Chang, S.T.; Lee, M.H.; Maikap, S.; Liu, C.W.; CHEE-WEE LIU

Showing items 1973076-1973085 of 2346473  (234648 Page(s) Totally)
<< < 197303 197304 197305 197306 197307 197308 197309 197310 197311 197312 > >>
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