| 臺大學術典藏 |
2018-09-10T09:20:51Z |
InAs MOS devices passivated with molecular beam epitaxy-grown Gd2O3 dielectrics
|
Lin, CA; Huang, ML; Chiu, P-C; Lin, H-K; Chyi, J-I; Chiang, TH; Lee, WC; Chang, YC; Chang, YH; Brown, GJ; others; MINGHWEI HONG |
| 義守大學 |
2010-09 |
InAs native oxides prepared by liquid phase oxidation method
|
Hsien-Cheng Lin;Kuan-Wei Lee;Chia-Hong Hsieh;Yu-Chun Cheng;Yeong-Her Wang |
| 國立臺灣大學 |
2001 |
InAs Quantum Dots on (001) GaAs Substrate with Two Groups of Different Sizes under Arsenic Shutter Closed Condition
|
Tang, Shiang-Feng; Lin, Shih-Yen; Lee, Si-Chen |
| 元智大學 |
2023-12-01 |
InAs Quantum Dots with Emission Wavelength of 1.38 μm Grown by Molecular Beam Epitaxy on GaAs Substrates
|
Pin-Chih Liu; Kai-Yang Hsu; Bhavya Kondapavuluri; Jhih-Han Lin; Hou-Yi Chen; Balaji G; Wei-Sheng Liu; Jen-Inn Chyi |
| 元智大學 |
2008-05 |
InAs Quantum Well Transistors for High-Speed Low Power Applications
|
許恒通; Edward Yi Chang; Chien-I Kuo |
| 元智大學 |
2008-05 |
InAs Quantum Well Transistors for High-Speed Low Power Applications
|
許恒通; Edward Yi Chang; Chien-I Kuo |
| 國立交通大學 |
2014-12-08T15:29:52Z |
InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
|
Chang, Edward-Yi; Kuo, Chien-I; Hsu, Heng-Tung; Chiang, Che-Yang; Miyamoto, Yasuyuki |
| 元智大學 |
2013-03 |
InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
|
E. Y. Chang; C. I. Kuo; Heng-Tung Hsu; Che-Yang Chiang; Y. Miyamoto |
| 國立交通大學 |
2014-12-08T15:36:33Z |
InAs-based heterostructure field-effect transistor using AlAs0.16Sb0.84 double barriers
|
Lin, Yue-Min; Lin, Kun-Ping; Lee, Ting-Chi; Li, Meng-Ying; Lee, Chien-Ping |
| 國立交通大學 |
2019-04-02T06:00:08Z |
InAs-based heterostructure field-effect transistor using AlAs0.16Sb0.84 double barriers
|
Lin, Yue-Min; Lin, Kun-Ping; Lee, Ting-Chi; Li, Meng-Ying; Lee, Chien-Ping |
| 元智大學 |
2009-04 |
InAs-Channel HEMTs for Ultra-Low-Power LNA Applications
|
許恒通; Chia-Yuan Chang; Edward Yi Chang; Yasuyuki Miyamoto |
| 元智大學 |
2009-04 |
InAs-Channel HEMTs for Ultra-Low-Power LNA Applications
|
許恒通; Chia-Yuan Chang; Edward Yi Chang; Yasuyuki Miyamoto |
| 元智大學 |
2008-09 |
InAs-Channel HEMTs for Ultra-Low-Power LNA Applications
|
許恒通; Chia-Yuan Chang; Edward Yi Chang; Chien-I Kuo; Yasuyuki Miyamoto |
| 元智大學 |
2008-09 |
InAs-Channel HEMTs for Ultra-Low-Power LNA Applications
|
許恒通; Chia-Yuan Chang; Edward Yi Chang; Chien-I Kuo; Yasuyuki Miyamoto |
| 元智大學 |
2008-09 |
InAs-Channel HEMTs for Ultra-Low-Power LNA Applications
|
許恒通; Chia-Yuan Chang; Edward Yi Chang; Chien-I Kuo; Yasuyuki Miyamoto |
| 國立交通大學 |
2014-12-08T15:40:50Z |
InAs-Channel High-Electron-Mobility Transistors for Ultralow-Power Low Noise Amplifier Applications
|
Chang, Chia-Yuan; Hsu, Heng-Tung; Chang, Edward Yi; Miyamoto, Yasuyuki |
| 元智大學 |
2009-10 |
InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic - Layer -Deposited Al2O3 Gate Dielectric
|
許恒通; Chia-Yuan Chang; Edward Yi Chang; Hai-Dang Trinh; Yasuyuki Miyamoto |
| 元智大學 |
2009-10 |
InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic - Layer -Deposited Al2O3 Gate Dielectric
|
許恒通; Chia-Yuan Chang; Edward Yi Chang; Hai-Dang Trinh; Yasuyuki Miyamoto |
| 國立交通大學 |
2014-12-08T15:10:28Z |
InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al(2)O(3) Gate Dielectric
|
Chang, Chia-Yuan; Hsu, Heng-Tung; Chang, Edward Yi; Trinh, Hai-Dang; Miyamoto, Yasuyuki |
| 國立交通大學 |
2019-04-02T05:58:44Z |
InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric
|
Chang, Chia-Yuan; Hsu, Heng-Tung; Chang, Edward Yi; Trinh, Hai-Dang; Miyamoto, Yasuyuki |
| 國立交通大學 |
2019-04-02T06:04:22Z |
InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric
|
Chang, Chia-Yuan; Chang, Edward Yi; Huang, Wei-Ching; Su, Yung-Hsuan; Trinh, Hai-Dang; Hsu, Heng-Tung; Miyamoto, Yasuyuki |
| 臺大學術典藏 |
2018-09-10T05:58:39Z |
InAs-GaAs quantum dots: From growth to lasers
|
Ledentsov, N.N.; Grundmann, M.; Kirstaedter, N.; Schmidt, O.G.; Mao, M.H.; Ustinov, V.M.; Egorov, A.Yu.; Zhukov, A.E.; Kopev, P.S.; Alferov, Zh.I.; Ruvimov, S.S.; G\\osele, U.; Heydenreich, J.; Bimberg, D.; MING-HUA MAOet al. |
| 臺大學術典藏 |
2018-09-10T05:58:39Z |
InAs-GaAs quantum pyramid lasers: In situ growth, radiative lifetimes and polarization properties
|
Ledentsov, N.N.; Grundmann, M.; Kirstaedter, N.; Schmidt, O.G.; Mao, M.H.; Ustinov, V.M.; Egorov, A.Yu.; Zhukov, A.E.; Kop\\'ev, P.S.; Alferov, Zh.I.; Ruvimov, S.S.; G\\osele, U.; Heydenreich, J.; Bimberg, D.; MING-HUA MAOet al. |
| 國立臺灣大學 |
2002 |
InAs/GaAs quantum dot infrared photodetector (QDIP) with double Al0.3Ga0.7As blocking barriers
|
Tang, Shiang-Feng; Lin, Shih-Yen; Lee, Si-Chen |
| 國立交通大學 |
2014-12-08T15:40:15Z |
InAs/GaAs quantum dot infrared photodetectors with different growth temperatures
|
Wang, SY; Chen, SC; Lin, SD; Lin, CJ; Lee, CP |
