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Institution	Date	Title	Author
國立交通大學	2017-04-21T06:49:47Z	InGaAs Metal-Oxide-Semiconductor FETs with Self-Aligned Ni-Alloy Source/Drain	Wang, Shin-Yuan; Chien, Chao-Hsin; Lin, Jin-Ju; Chang, Chun-Yen
臺大學術典藏	2019-12-27T07:49:35Z	InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al 2O3/Ga2O3(Gd2O 3) as a gate dielectric	Lin, T.D.;Chiu, H.C.;Chang, P.;Lee, W.C.;Chinag, T.H.;Kwo, J.;Tsai, W.;Hong, M.; Lin, T.D.; Chiu, H.C.; Chang, P.; Lee, W.C.; Chinag, T.H.; Kwo, J.; Tsai, W.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2018-09-10T07:34:13Z	InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al2O3/Ga2O3 (Gd2O3) as a gate dielectric	Lin, TD;Chiu, HC;Chang, P;Lee, WC;Chiang, TH;Kwo, JR;Tsai, W;Hong, M; Lin, TD; Chiu, HC; Chang, P; Lee, WC; Chiang, TH; Kwo, JR; Tsai, W; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T06:28:11Z	InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation	Chang, YC; Huang, ML; Lee, YJ; Lee, KY; Lin, TD; Hong, M; Kwo, J; Liao, CC; Cheng, KY; Lay, TS; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:43Z	InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation	MINGHWEI HONG;Lay, T.S.;Cheng, K.Y.;Liao, C.C.;Kwo, J.;Hong, M.;Lin, T.D.;Lee, K.Y.;Lee, Y.J.;Huang, M.L.;Chang, Y.C.; Chang, Y.C.; Huang, M.L.; Lee, Y.J.; Lee, K.Y.; Lin, T.D.; Hong, M.; Kwo, J.; Liao, C.C.; Cheng, K.Y.; Lay, T.S.; MINGHWEI HONG
國立臺灣海洋大學	2007-01	InGaAs quantum well saturable absorbers for diode-pumped passively Q-switched Nd YAG laser at 1123 nm	K. F. Huang; J. Y. Huang; H. C. Liang; K. W. Su; H. C. Lai; Y. F. Chen
國立交通大學	2014-12-08T15:14:56Z	InGaAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd : YAG laser at 1123 nm	Huang, J. Y.; Liang, H. C.; Su, K. W.; Lai, H. C.; Chen, Y. -F.; Huang, K. F.
國立交通大學	2018-08-21T05:53:11Z	InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma Treatment	Chang, Po-Chun; Luc, Quang-Ho; Lin, Yueh-Chin; Lin, Yen-Ku; Wu, Chia-Hsun; Sze, Simon M.; Chang, Edward Yi
元智大學	2007-06	InGaAs Sub-monolayer Quantum Dots VCSEL with Extremely Temperature Insensitivity for 2.125 Gb/s Application	賴芳儀; H. C. Kuo; H. W. Huang; S. C. Wang; G. R. Lin; J. Chi; N. A. Maleev; S. A. Blokhin
臺大學術典藏	2007	InGaAs sub-monolayer quantum dots VCSEL with extremely temperature insensitivity for 2.125 Gb/s application	GONG-RU LIN; Blokhin, S.A.; Maleev, N.A.; Chi, J.; Lin, G.R.; Wang, S.C.; Huang, H.W.; Kuo, H.C.; Lai, F.-I.

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