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显示项目 438201-438250 / 2307984 (共46160页)
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每页显示[10|25|50]项目
| 國立臺灣大學 |
2000 |
GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layer
|
Lee, Ching-Ting; Shyu, Kuo-Chuan; Lin, Iang-Jeng; Lin, Hao-Hsiung |
| 國立交通大學 |
2014-12-08T15:41:41Z |
GaAs metal-semiconductor-metal photodetectors with low dark current and high responsivity at 850 nm
|
Lin, SD; Lee, CP |
| 國立高雄師範大學 |
1998-08 |
GaAs MMIC被動元件與MESFET偏壓電路之研製
|
王瑞祿; Ruey-Lue Wang |
| 臺大學術典藏 |
2002 |
GaAs monolithic 1.5 to 2.8 GHz tunable ring oscillator withaccurate quadrature outputs
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Wu, Wen-Chieh; Lin, Hao-Hsiung; Wu, Wen-Chieh; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2002 |
GaAs monolithic 1.5 to 2.8 GHz tunable ring oscillator withaccurate quadrature outputs
|
Wu, Wen-Chieh; Lin, Hao-Hsiung |
| 臺大學術典藏 |
2018-09-10T04:14:55Z |
GaAs monolithic 1.5 to 2.8GHz tunable ring oscillator with accurate quadrature outputs
|
W. C. Wu,; H. Wang,; H. H. Lin,; HAO-HSIUNG LIN |
| 國立成功大學 |
2005-07 |
GaAs MOS capacitors with photo-CVD SiO2 insulator layers
|
Liu, C. H.; Lin, T. K.; Chang, Shoou-Jinn |
| 臺大學術典藏 |
2018-09-10T07:01:18Z |
GaAs MOSFET using MBE-grown Ga 2 O 3 (Gd 2 O 3) as gate oxide
|
Kim, S-J; Park, J-W; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:57Z |
GaAs MOSFET using MBE-grown Ga 2 O 3 (Gd 2 O 3 ) as gate oxide
|
Kim, S.-J.; Park, J.-W.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:35Z |
GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
|
Ye, PD;Wilk, GD;Kwo, J;Yang, BAYB;Gossmann, H-JL;Frei, MAFM;Chu, SNG;Mannaerts, JP;Sergent, MASM;Hong, MAHM;others; Ye, PD; Wilk, GD; Kwo, J; Yang, BAYB; Gossmann, H-JL; Frei, MAFM; Chu, SNG; Mannaerts, JP; Sergent, MASM; Hong, MAHM; others; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:51Z |
GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
|
Ye, P.D.;Wilk, G.D.;Kwo, J.;Yang, B.;Gossmann, H.-J.L.;Frei, M.;Chu, S.N.G.;Mannaerts, J.P.;Sergent, M.;Hong, M.;Ng, K.K.;Bude, J.; Ye, P.D.; Wilk, G.D.; Kwo, J.; Yang, B.; Gossmann, H.-J.L.; Frei, M.; Chu, S.N.G.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.K.; Bude, J.; MINGHWEI HONG |
| 國立成功大學 |
1999-01 |
GaAs MOSFET's fabrication with a selective liquid phase oxidized gate
|
Wu, Jau-Yi; Wang, Hwei-Heng; Wang, Yeong-Her; Houng, Mau-Phon |
| 臺大學術典藏 |
2018-09-10T03:28:32Z |
GaAs MOSFET-Achievements and Challenges M. Hong, YC Wang, F. Ren (,), JP Mannaerts, J. Kwo, AR Kortan, JN Baillargeon, and AY Cho Bell Laboratories, Lucent Technologies, Murray Hill, NJ
|
Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:44Z |
GaAs MOSFET-Materials Physics and Devices
|
Hong, M;Kwo, J;Kortan, AR;Mannaerts, JP;Wang, YC;Lay, TS; Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; Wang, YC; Lay, TS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:13Z |
GaAs MOSFETs using Ga 2 O 3 (Gd 2 O 3) as gate dielectric
|
Hong, Minghwei; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:14:22Z |
GaAs nanowire/PEDOT: PSS hybrid solar cells
|
Chao, J.-J.;Shiu, S.-C.;Lin, C.-F.; Chao, J.-J.; Shiu, S.-C.; Lin, C.-F.; CHING-FUH LIN |
| 臺大學術典藏 |
2018-09-10T08:14:22Z |
GaAs nanowire/PEDOT:PSS hybrid solar cells
|
Chao, J.-J.;Shiu, S.-C.;Lin, C.-F.; Chao, J.-J.; Shiu, S.-C.; Lin, C.-F.; CHING-FUH LIN |
| 臺大學術典藏 |
2018-09-10T08:14:22Z |
GaAs nanowire/PEDOT:PSS hybrid solar cells: Morphological and performance characterization
|
Chao, J.-J.;Shiu, S.-C.;Lin, C.-F.; Chao, J.-J.; Shiu, S.-C.; Lin, C.-F.; CHING-FUH LIN |
| 臺大學術典藏 |
2018-09-10T08:42:04Z |
GaAs nanowire/PEDOT:PSS hybrid solar cells: The relationship between nanowire morphology and device performance
|
Chao, J.-J.;Shiu, S.-C.;Hung, S.-C.;Lin, C.-F.; Chao, J.-J.; Shiu, S.-C.; Hung, S.-C.; Lin, C.-F.; CHING-FUH LIN |
| 臺大學術典藏 |
2018-09-10T08:14:22Z |
GaAs nanowire/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) hybrid solar cells
|
Chao, J.-J.;Shiu, S.-C.;Hung, S.-C.;Lin, C.-F.; Chao, J.-J.; Shiu, S.-C.; Hung, S.-C.; Lin, C.-F.; CHING-FUH LIN |
| 臺大學術典藏 |
2018-09-10T09:22:03Z |
GaAs nanowire/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) hybrid solar cells with incorporating electron blocking poly(3-hexylthiophene) layer
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Chao, J.-J.; Shiu, S.-C.; Lin, C.-F.; CHING-FUH LIN |
| 國立高雄師範大學 |
1992 |
GaAs Negative Differential Resistance Devices
|
Ruey-Lue Wang;Y. K. Su;H. H. Tsai; 王瑞祿 |
| 元智大學 |
2006-08 |
GaAs pHEMT characterization for OFDM power amplifier application
|
黃建彰; 李菘茂; 陳冠宇 |
| 元智大學 |
2005-08 |
GaAs pHEMT characterization for OFDM power amplifier application
|
黃建彰; 李菘茂; 陳冠宇 |
| 元智大學 |
2005-08 |
GaAs pHEMT characterization for OFDM power amplifier application
|
黃建彰; 李菘茂; 陳冠宇 |
| 義守大學 |
2011 |
GaAs pHEMT射頻切換開關的特性分析
|
李威儂; Wei-Nung Li |
| 國立交通大學 |
2015-07-21T08:28:30Z |
GaAs Polariton Interference in Magnetic Field: Oblique Incident Ellipsometry Measurement
|
Su, Sheng-Kai; Voskoboynikov, Oleksandr; Li, Liang-Chen; Suen, Yuen-Wuu; Lee, Chien-Ping |
| 元智大學 |
2006-09 |
GaAs power pHEMT characterization for extracting nonlinear parameters of drain current by harmonic measurement
|
陳冠宇; 黃建彰 |
| 元智大學 |
2006-09 |
GaAs power pHEMT characterization for extracting nonlinear parameters of drain current by harmonic measurement
|
陳冠宇; 黃建彰 |
| 臺大學術典藏 |
2018-09-10T05:56:11Z |
GaAs surface passivation using in-situ oxide deposition
|
Passlack, M;Hong, M;Opila, RL;Mannaerts, JP;Kwo, JR; Passlack, M; Hong, M; Opila, RL; Mannaerts, JP; Kwo, JR; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
GaAs surface reconstruction obtained using a dry process
|
Choquette, Kent D;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG |
| 國立高雄師範大學 |
1995 |
GaAs tristep low-low doping channel field effect transistor
|
Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Kong-Beng Thei;Cheng-Zu Wu;Wen-Shiung Lour;Yuan-Tzu Liu;Rong-Chau Liu; 蔡榮輝 |
| 中州科技大學 |
2012-12 |
GaAs 發光二極體元件的工作特性模擬分析
|
姚凱瀚, 陳奕豪,徐守棟 |
| 國立成功大學 |
2002 |
GaAs(N11)A/B 基板上成長之InGaAs 量子點其光學性質,壓電效應,表層厚度與空間分析之研究(2/2)
|
田興龍 |
| 國立臺灣大學 |
1993 |
GaAs-AlxGa1-xAs系統電子及電網Subband Energy之度量
|
張顏暉; Chang, Yuan-Huei |
| 臺大學術典藏 |
2018-09-10T07:02:54Z |
GaAs-based bipolar cascade light-emitting-diodes and superluminescent- diodes at the 1.04-μm wavelength regime
|
Guol, S.-H. and Wang Jr., H. and Wu, Y.-H. and Lin, W. and Yang, Y.-J. and Sun, C.-K. and Pan, C.-L. and Shi, J.-W.; CHI-KUANG SUN |
| 臺大學術典藏 |
2018-09-10T03:29:19Z |
GaAs-based long-wavelength traveling-wave photodetector
|
Shi, Jin-Wei; Sun, Chi-Kuang; Yang, Ying-Jay; Chiu, Yi-Jen; Bowers, John E.; CHI-KUANG SUN |
| 臺大學術典藏 |
2018-09-10T03:51:07Z |
GaAs-based long-wavelength traveling-wave photodetector
|
Y. J. Yang,; J. E. Bowers; YING-JAY YANG; J.-W. Shi; K.-G. Gan; Y.-J. Chiu; C.-K. Sun |
| 臺大學術典藏 |
2019-12-27T07:49:50Z |
GaAs-based metal-oxide semiconductor field-effect transistors with Al 2 O 3 gate dielectrics grown by atomic layer deposition
|
Ye, P.D.; Wilk, G.D.; Yang, B.; Kwo, J.; Gossmann, H.-J.L.; Frei, M.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.K.; Bude, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:58Z |
GaAs-Based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition
|
Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Mannaerts, JP; Sergent, M; Hong, M; Ng, KK; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:33Z |
GaAs-based MOSFETs with Al/sub 2/O/sub 3/gate dielectrics grown by atomic layer deposition
|
Ye, PD;Wilk, GD;Yang, B;Kwo, J;Gossmann, H-JL;Frei, M;Chu, SNG;Nakahara, S;Mannaerts, JP;Sergent, M;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Chu, SNG; Nakahara, S; Mannaerts, JP; Sergent, M; others; MINGHWEI HONG |
| 南台科技大學 |
2021-11 |
GaAs-Based p-i-n Narrow Bandpass 850 nm IR Photodetector With a p-AlGaAs Filter Layer
|
Chun-Kai Wang;Yu-Zung Chiou;Yi-Lo Huang |
| 臺大學術典藏 |
2018-09-10T07:35:54Z |
GaAs-based transverse junction superluminescent diode at 1.1um wavelength region
|
Guol, S.-H.;Chou, M.-G.;Wang, J.-H.;Yang, Y.-J.;Sun, C.-K.;Shi, J.-W.; Guol, S.-H.; Chou, M.-G.; Wang, J.-H.; Yang, Y.-J.; Sun, C.-K.; Shi, J.-W.; CHI-KUANG SUN |
| 臺大學術典藏 |
2018-09-10T08:14:03Z |
GaAs-based transverse junction superluminescent diodes with strain-compensated InGaAs-GaAsP multiple-quantum-wells at 1.1-μm wavelength
|
Guol, S.-H.;Chou, M.-G.;Yang, Y.-J.;Sun, C.-K.;Shi, J.-W.; Guol, S.-H.; Chou, M.-G.; Yang, Y.-J.; Sun, C.-K.; Shi, J.-W.; CHI-KUANG SUN |
| 臺大學術典藏 |
2010 |
GaAs-Based Transverse Junction Superluminescent Diodes with Strain-Compensated InGaAs/GaAsP Multiple-Quantum-Wells at 1.1μm Wavelength
|
Guol, Shi-Hao; Chou, Ming-Ge; Yang, Ying-Jay; Sun, Chi-Kuang; Shi, Jin-Wei; Guol, Shi-Hao; Chou, Ming-Ge; Yang, Ying-Jay; Sun, Chi-Kuang; Shi, Jin-Wei |
| 國立臺灣大學 |
2010 |
GaAs-Based Transverse Junction Superluminescent Diodes with Strain-Compensated InGaAs/GaAsP Multiple-Quantum-Wells at 1.1μm Wavelength
|
Guol, Shi-Hao; Chou, Ming-Ge; Yang, Ying-Jay; Sun, Chi-Kuang; Shi, Jin-Wei |
| 國立成功大學 |
1999 |
GAAS-BASED 微波主動元件之研究
|
蘇炎坤; 王永和; 王瑞祿 |
| 國立成功大學 |
1999 |
GaAs-Based 微波主動元件之研究-子計劃二：PHEMT 微波功率元件之研究
|
王永和 |
| 國立成功大學 |
1999 |
GAAS-BASED 微波主動元件之研究-子計畫一：HBT 高頻元件之研製
|
蘇炎坤 |
| 國立高雄師範大學 |
1998-08 |
GaAs-Based微波主動元件之研究---子計畫III：HBT高頻元件等效電路之研究
|
王瑞祿; Ruey-Lue Wang |
显示项目 438201-438250 / 2307984 (共46160页)
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