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显示项目 502111-502160 / 2349007 (共46981页)
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机构	日期	题名	作者
國立交通大學	2014-12-08T15:36:33Z	InAs-based heterostructure field-effect transistor using AlAs0.16Sb0.84 double barriers	Lin, Yue-Min; Lin, Kun-Ping; Lee, Ting-Chi; Li, Meng-Ying; Lee, Chien-Ping
國立交通大學	2019-04-02T06:00:08Z	InAs-based heterostructure field-effect transistor using AlAs0.16Sb0.84 double barriers	Lin, Yue-Min; Lin, Kun-Ping; Lee, Ting-Chi; Li, Meng-Ying; Lee, Chien-Ping
元智大學	2009-04	InAs-Channel HEMTs for Ultra-Low-Power LNA Applications	許恒通; Chia-Yuan Chang; Edward Yi Chang; Yasuyuki Miyamoto
元智大學	2009-04	InAs-Channel HEMTs for Ultra-Low-Power LNA Applications	許恒通; Chia-Yuan Chang; Edward Yi Chang; Yasuyuki Miyamoto
元智大學	2008-09	InAs-Channel HEMTs for Ultra-Low-Power LNA Applications	許恒通; Chia-Yuan Chang; Edward Yi Chang; Chien-I Kuo; Yasuyuki Miyamoto
元智大學	2008-09	InAs-Channel HEMTs for Ultra-Low-Power LNA Applications	許恒通; Chia-Yuan Chang; Edward Yi Chang; Chien-I Kuo; Yasuyuki Miyamoto
元智大學	2008-09	InAs-Channel HEMTs for Ultra-Low-Power LNA Applications	許恒通; Chia-Yuan Chang; Edward Yi Chang; Chien-I Kuo; Yasuyuki Miyamoto
國立交通大學	2014-12-08T15:40:50Z	InAs-Channel High-Electron-Mobility Transistors for Ultralow-Power Low Noise Amplifier Applications	Chang, Chia-Yuan; Hsu, Heng-Tung; Chang, Edward Yi; Miyamoto, Yasuyuki
元智大學	2009-10	InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic - Layer -Deposited Al2O3 Gate Dielectric	許恒通; Chia-Yuan Chang; Edward Yi Chang; Hai-Dang Trinh; Yasuyuki Miyamoto
元智大學	2009-10	InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic - Layer -Deposited Al2O3 Gate Dielectric	許恒通; Chia-Yuan Chang; Edward Yi Chang; Hai-Dang Trinh; Yasuyuki Miyamoto
國立交通大學	2014-12-08T15:10:28Z	InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al(2)O(3) Gate Dielectric	Chang, Chia-Yuan; Hsu, Heng-Tung; Chang, Edward Yi; Trinh, Hai-Dang; Miyamoto, Yasuyuki
國立交通大學	2019-04-02T05:58:44Z	InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric	Chang, Chia-Yuan; Hsu, Heng-Tung; Chang, Edward Yi; Trinh, Hai-Dang; Miyamoto, Yasuyuki
國立交通大學	2019-04-02T06:04:22Z	InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric	Chang, Chia-Yuan; Chang, Edward Yi; Huang, Wei-Ching; Su, Yung-Hsuan; Trinh, Hai-Dang; Hsu, Heng-Tung; Miyamoto, Yasuyuki
臺大學術典藏	2018-09-10T05:58:39Z	InAs-GaAs quantum dots: From growth to lasers	Ledentsov, N.N.; Grundmann, M.; Kirstaedter, N.; Schmidt, O.G.; Mao, M.H.; Ustinov, V.M.; Egorov, A.Yu.; Zhukov, A.E.; Kopev, P.S.; Alferov, Zh.I.; Ruvimov, S.S.; G\\osele, U.; Heydenreich, J.; Bimberg, D.; MING-HUA MAOet al.
臺大學術典藏	2018-09-10T05:58:39Z	InAs-GaAs quantum pyramid lasers: In situ growth, radiative lifetimes and polarization properties	Ledentsov, N.N.; Grundmann, M.; Kirstaedter, N.; Schmidt, O.G.; Mao, M.H.; Ustinov, V.M.; Egorov, A.Yu.; Zhukov, A.E.; Kop\\'ev, P.S.; Alferov, Zh.I.; Ruvimov, S.S.; G\\osele, U.; Heydenreich, J.; Bimberg, D.; MING-HUA MAOet al.
國立臺灣大學	2002	InAs/GaAs quantum dot infrared photodetector (QDIP) with double Al0.3Ga0.7As blocking barriers	Tang, Shiang-Feng; Lin, Shih-Yen; Lee, Si-Chen
國立交通大學	2014-12-08T15:40:15Z	InAs/GaAs quantum dot infrared photodetectors with different growth temperatures	Wang, SY; Chen, SC; Lin, SD; Lin, CJ; Lee, CP
臺大學術典藏	2018-09-10T06:31:09Z	InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition	MING-HUA MAO; Werner, P.; Kosogov, A.O.; Bimberg, D.; Grundmann, M.; Mao, M.-H.; Kirstaedter, N.; Krost, A.; Heinrichsdorff, F.
國立交通大學	2014-12-08T15:18:52Z	InAs/GaAs quantum-dot saturable absorber for a diode-pumped passively mode-locked Nd : YVO4 laser at 1342 nm	Su, KW; Lai, HC; Li, A; Chen, YF; Huang, KE
國立交通大學	2014-12-08T15:19:37Z	InAs/GaAs quantum-dot saturable absorbers for diode-pumped passively Q-switched Nd-doped 1.3-mu m lasers	Lai, HC; Li, A; Su, KW; Ku, ML; Chen, YF; Huang, KF
國立彰化師範大學	1997-03	InAs/GaAs Short-period Strained-layer Superlattices Grown on GaAs as Spatial Light Modulators: Uniformity Measurements	Huang, Man-Fang; Elsa Garmire; Tom Hasenberg; Steffen Koehler
國立交通大學	2014-12-12T02:44:03Z	InAs/GaAs自聚式量子點掺入銻與氮之特性研究	黃任鋒; Ren-Fong Huang; 陳振芳; Jenn-Fang Chen
國立高雄應用科技大學	2008	InAs/GaAs量子點及量子點分子中之激子衰變與拉比震盪研究	洪冠明
國立高雄應用科技大學	2009	InAs/GaAs量子點及量子點分子中之激子衰變與拉比震盪研究	洪冠明
國立高雄應用科技大學	2010	InAs/GaAs量子點及量子點分子中之激子衰變與拉比震盪研究	洪冠明
國立交通大學	2014-12-12T02:25:41Z	InAs/GaAs量子點電容-電壓和深層能階暫態頻譜之電性研究	石昇弘; S. H. Shih; 陳振芳; J. F. Chen
國立交通大學	2014-12-08T15:03:41Z	InAs/In(1-x)Ga(x)As Composite Channel High Electron Mobility Transistors for High Speed Applications	Chang, Edward Yi; Kuo, Chien-I; Hsu, Heng-Tung; Chang, Chia-Yuan
元智大學	2008-10	InAs/In1-xGaxAs Composite Channel High Electron Mobility Transistors for High Speed Applications	許恒通; Edward Yi Chang; Chien-I Kuo; Chia-Yuan Chang
元智大學	2008-10	InAs/In1-xGaxAs Composite Channel High Electron Mobility Transistors for High Speed Applications	許恒通; Edward Yi Chang; Chien-I Kuo; Chia-Yuan Chang
元智大學	2008-10	InAs/In1-xGaxAs Composite Channel High Electron Mobility Transistors for High Speed Applications	許恒通; Edward Yi Chang; Chien-I Kuo; Chia-Yuan Chang
臺大學術典藏	2018-09-10T04:35:09Z	InAs/InGaAs quantum dot laser grown by solid source molecular-beam epitaxy	F. Y. Chang,; G. H. Liao,; C. S. Lee,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	Jun-04	InAs/InGaAs quantum dot laser with high ground-state modal gain grown by solid-source molecular-beam epitaxy	Chang, Fu-Yu; Lee, Chi-Sen; Liao, Gang-Hua; Lin, Hao-Hsiung; Chang, Fu-Yu; Lee, Chi-Sen; Liao, Gang-Hua; Lin, Hao-Hsiung
國立臺灣大學	2004-06	InAs/InGaAs quantum dot laser with high ground-state modal gain grown by solid-source molecular-beam epitaxy	Chang, Fu-Yu; Lee, Chi-Sen; Liao, Gang-Hua; Lin, Hao-Hsiung
國立臺灣大學	2006	InAs/InGaAs/GaAs Coupled Quantum Dot Laser with Predeposited InAs Seed Layer	Lee, Chi-Sen; Chang, Fu-Yu; Liu, Day-Shan; Lin, Hao-Hsiung
國立虎尾科技大學	2006	InAs/InGaAs/GaAs coupled quantum dot laser with predeposited InAs seed layer	Lee, Chi-Sen;Chang, Fu-Yu;Liu, Day-Shan;Lin, Hao-Hsiung
臺大學術典藏	2018-09-10T06:01:58Z	InAs/InGaAs/GaAs coupled quantum dot laser with predeposited InAs seed layer	C. S. Lee,; F. Y. Chang,; D. S. Liu,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:31Z	InAs/InGaAs/GaAs coupled quantum-dot laser	C. S. Lee,; F. Y. Chang,; D. S. Liu,; H. H. Lin,; HAO-HSIUNG LIN
國立交通大學	2014-12-12T01:57:30Z	InAs/InGaAs量子點光電容特性	曾國豪; Tseng, Kuo-Hau; 陳振芳; Chen, Jenn-Fang
臺大學術典藏	2018-09-10T03:50:03Z	InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength = 2.38m	Ding-Kang Shih,; H. H. Lin,; Y. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2001	InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength λ=2.38 μm	Shih, Ding-Kang; Lin, Hao-Hsiung; Lin, Y.H.; Shih, Ding-Kang; Lin, Hao-Hsiung; Lin, Y.H.
國立臺灣大學	2001	InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength λ=2.38 μm	Shih, Ding-Kang; Lin, Hao-Hsiung; Lin, Y.H.
臺大學術典藏	2018-09-10T03:50:04Z	InAsN Grown by Plasma-assisted Gas Source MBE	HAO-HSIUNG LIN; T. R. Yang,; T. Y. Chu,; H. H. Lin,; D. K. Shih,
臺大學術典藏	1999-01	InAsN quantum wells grown on InP by gas source MBE	J. S. Wang,; H. H. Lin,; L. W. Sung,; G. R. Chen,; HAO-HSIUNG LIN
國立臺灣大學	2003	InAsN/InGaAs/InP quantum well structures for mid-infrared diode lasers	Lin, H.H.; Shih, D.K.; Lin, Y.H.; Chiang, K.H.
臺大學術典藏	2018-09-10T04:35:08Z	InAsN/InGaAs/InP quantum well structures for mid-infrared diode lasers	H.-H. Lin,; D.-K. Shih,; Y.-H. Lin,; K.-H. Chiang,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:13Z	InAsN/InGaAsP multiple quantum wells on InP substrates grown by gas source molecular beam epitaxy	J. S. Wang,; G. R. Chen,; L. W. Sung,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:59Z	InAsPSb bulk layer and quantum well grown by gas source molecular beam epitaxy	G. Tsai,; D. L. Wang,; C. E. Wu,; C. R. Wu,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:43Z	InAsPSb quaternary alloy grown by gas source molecular beam epitaxy	Y. T. Lin,; H. H. Lin; HAO-HSIUNG LIN; G. Tsai,; D. L. Wang,; C. E. Wu,; C. J. Wu,
國立臺灣大學	2007	InAsPSb quaternary alloy grown by gas source molecular beam epitaxy	Tsai, Gene; Wang, De-Lun; Wu, Chia-En; Wu, Chen-Jun; Lin, Yan-Ting; Lin, Hao-Hsiung
臺大學術典藏	2018-09-10T06:01:59Z	InAsPsb quaternary for mid-infrared application grown by gas source molecular beam epitaxy	G. Tsai,; D. L. Wang,; C. E. Wu,; C. R. Wu,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN

显示项目 502111-502160 / 2349007 (共46981页)
<< < 10038 10039 10040 10041 10042 10043 10044 10045 10046 10047 > >>
每页显示[10|25|50]项目

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