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Showing items 502111-502120 of 2349007 (234901 Page(s) Totally)
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Institution	Date	Title	Author
國立交通大學	2014-12-08T15:36:33Z	InAs-based heterostructure field-effect transistor using AlAs0.16Sb0.84 double barriers	Lin, Yue-Min; Lin, Kun-Ping; Lee, Ting-Chi; Li, Meng-Ying; Lee, Chien-Ping
國立交通大學	2019-04-02T06:00:08Z	InAs-based heterostructure field-effect transistor using AlAs0.16Sb0.84 double barriers	Lin, Yue-Min; Lin, Kun-Ping; Lee, Ting-Chi; Li, Meng-Ying; Lee, Chien-Ping
元智大學	2009-04	InAs-Channel HEMTs for Ultra-Low-Power LNA Applications	許恒通; Chia-Yuan Chang; Edward Yi Chang; Yasuyuki Miyamoto
元智大學	2009-04	InAs-Channel HEMTs for Ultra-Low-Power LNA Applications	許恒通; Chia-Yuan Chang; Edward Yi Chang; Yasuyuki Miyamoto
元智大學	2008-09	InAs-Channel HEMTs for Ultra-Low-Power LNA Applications	許恒通; Chia-Yuan Chang; Edward Yi Chang; Chien-I Kuo; Yasuyuki Miyamoto
元智大學	2008-09	InAs-Channel HEMTs for Ultra-Low-Power LNA Applications	許恒通; Chia-Yuan Chang; Edward Yi Chang; Chien-I Kuo; Yasuyuki Miyamoto
元智大學	2008-09	InAs-Channel HEMTs for Ultra-Low-Power LNA Applications	許恒通; Chia-Yuan Chang; Edward Yi Chang; Chien-I Kuo; Yasuyuki Miyamoto
國立交通大學	2014-12-08T15:40:50Z	InAs-Channel High-Electron-Mobility Transistors for Ultralow-Power Low Noise Amplifier Applications	Chang, Chia-Yuan; Hsu, Heng-Tung; Chang, Edward Yi; Miyamoto, Yasuyuki
元智大學	2009-10	InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic - Layer -Deposited Al2O3 Gate Dielectric	許恒通; Chia-Yuan Chang; Edward Yi Chang; Hai-Dang Trinh; Yasuyuki Miyamoto
元智大學	2009-10	InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic - Layer -Deposited Al2O3 Gate Dielectric	許恒通; Chia-Yuan Chang; Edward Yi Chang; Hai-Dang Trinh; Yasuyuki Miyamoto

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