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顯示項目 251841-251850 / 2348570 (共234857頁) << < 25180 25181 25182 25183 25184 25185 25186 25187 25188 25189 > >> 每頁顯示[10|25|50]項目
| 臺大學術典藏 |
2018-09-10T09:18:21Z |
Charge transporting enhancement of NiO photocathodes for p-type dye-sensitized solar cells
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Hsu, C.-Y.; Chen, W.-T.; Chen, Y.-C.; Wei, H.-Y.; Yen, Y.-S.; Huang, K.-C.; Ho, K.-C.; Chu, C.-W.; Lin, J.T.; KUO-CHUAN HO |
| 國立交通大學 |
2014-12-08T15:47:59Z |
Charge Trapping and Detrapping Behavior of Fluorinated HfO(2)/SiON Gate Stacked nMOSFET
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Chen, Yung-Yu; Hsieh, Chih-Ren |
| 國立交通大學 |
2019-04-02T06:00:27Z |
Charge Trapping and Detrapping Behavior of Fluorinated HfO2/SiON Gate Stacked nMOSFET
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Chen, Yung-Yu; Hsieh, Chih-Ren |
| 國立成功大學 |
2020-07-28 |
Charge Trapping Augmented Switchable Sub-band-gap Photoresponse of Zinc-Tin Oxide Thin-Film Transistor
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Hsiao;Yang-Hsuan;Leung;Tak-Pui;Li;Jeng-Ting;Shih;Li-Chung;Chen;Jen-Sue |
| 國立成功大學 |
2009-03 |
Charge trapping behavior of SiO2-Anodic Al2O3-SiO2 gate dielectrics for nonvolatile memory applications
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Huang, Chun-Hsien; Li, En-Jui; Chang, Wai-Jyh; Wang, Na-Fu; Hung, Chen-I; Houng, Mau-Phon |
| 國立臺灣大學 |
2007 |
Charge trapping characteristics of atomic-layer-deposited HfO2 films with Al2O3 as a blocking oxide for high-density non-volatile memory device applications
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Maikap, S.; Lee, H.Y.; Wang, T.Y.; Tzeng, P.J.; Wang, C.C.; Lee, L.S.; Liu, K.C.; Yang, J.R.; Tsai, M.J. |
| 國立交通大學 |
2014-12-08T15:22:43Z |
Charge trapping induced drain-induced-barrier-lowering in HfO2/TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stress
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Lo, Wen-Hung; Chang, Ting-Chang; Tsai, Jyun-Yu; Dai, Chih-Hao; Chen, Ching-En; Ho, Szu-Han; Chen, Hua-Mao; Cheng, Osbert; Huang, Cheng-Tung |
| 國立成功大學 |
2012-04-09 |
Charge trapping induced drain-induced-barrier-lowering in HfO2/TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stress
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Lo, Wen-Hung; Chang, Ting-Chang; Tsai, Jyun-Yu; Dai, Chih-Hao; Chen, Ching-En; Ho, Szu-Han; Chen, Hua-Mao; Cheng, Osbert; Huang, Cheng-Tung |
| 國立交通大學 |
2014-12-08T15:21:35Z |
Charge trapping induced frequency-dependence degradation in n-MOSFETs with high-k/metal gate stacks
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Dai, Chih-Hao; Chang, Ting-Chang; Chu, Ann-Kuo; Kuo, Yuan-Jui; Hung, Ya-Chi; Lo, Wen-Hung; Ho, Szu-Han; Chen, Ching-En; Shih, Jou-Miao; Chung, Wan-Lin; Chen, Hua-Mao; Dai, Bai-Shan; Tsai, Tsung-Ming; Xia, Guangrui; Cheng, Osbert; Huang, Cheng Tung |
| 國立高雄師範大學 |
2008-12 |
Charge Trapping Memory Stack with Aluminum Oxide as the Tunnel Barrier
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J.F Yang;X.W. (Sharon) Wang;Y.L. Yang;T.P. Ma; 楊宜霖 |
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