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Showing items 503076-503100 of 2303212 (92129 Page(s) Totally)
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| 國立成功大學 |
2004-05 |
InGaN/AlGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer
|
Chen, C. H.; Chang, Shoou-Jinn; Su, Yan-Kuin |
| 國立成功大學 |
2004-03 |
InGaN/GaN blue light-emitting diodes with self-assembled quantum dots
|
Su, Yan-Kuin; Chang, Shoou-Jinn; Ji, L. W.; Chang, C. S.; Wu, L. W.; Fang, T. H.; Lam, K. T. |
| 國立成功大學 |
2003-05 |
InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer
|
Wu, L. W.; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsai, T. Y.; Wen, Ten-Chin; Kuo, C. H.; Lai, W. C.; Sheu, Jinn-Kong; Tsai, J. M.; Chen, S. C.; Huang, B. R. |
| 國立成功大學 |
2002-05 |
InGaN/GaN light emitting diodes activated in O-2 ambient
|
Kuo, Chih-Hung; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, Jiann-Fuh; Wu, Liang-Wen; Sheu, Jinn-Kung; Chen, C. H.; Chi, Gou-Chung |
| 國立成功大學 |
2004-04 |
InGaN/GaN light emitting diodes with a lateral current blocking structure
|
Wang, Hsin-Chuan; Su, Yan-Kuin; Lin, Chun-Liang; Chen, Wen-Bin; Chen, Shi-Ming |
| 國立成功大學 |
2002-08 |
InGaN/GaN light emitting diodes with a p-down structure
|
Su, Yan-Kuin; Chang, Shoou-Jinn; Ko, Chih-Hsin; Chen, Jiann-Fuh; Kuan, Ta-Ming; Lan, Wen-How; Lin, Wen-Jen; Cherng, Y. T.; Webb, James |
| 義守大學 |
2005-12 |
InGaN/GaN light emitting diodes with Ni/Au mesh p-contacts
|
Shui-Hsiang Su;Cheng-Chieh Hou;Meiso Yokoyama;Shi-Ming Chen |
| 國立成功大學 |
2003-05 |
InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts
|
Lin, Y. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsai, Tzong-Yow; Chang, C. S.; Shei, Shih-Chang; Kuo, C. W.; Chen, S. C. |
| 南台科技大學 |
2003-06 |
InGaN/GaN light emitting diodes with rapid thermal annealed Ni/ITO p-contacts
|
Chia-Sheng Chang; Shoou-Jinn Chang; Yan-Kuin Su; Yu-Zung Chiou; Yi-Chao Lin; Yu-Pin Hus; Shih-Chang Shei; Jung-Chin Ke; Hsin-Ming Lo; Shih-Chin. Chen; Chun-Hsing Liu |
| 國立成功大學 |
2003-05 |
InGaN/GaN light-emitting diodes with a reflector at the backside of sapphire substrates
|
Hsu, Y. P.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chang, C. S.; Shei, Shih-Chang; Lin, Y. C.; Kuo, C. H.; Wu, L. W.; Chen, S. C. |
| 國立成功大學 |
2003-04 |
InGaN/GaN light-emitting diodes with ITO p-contact layers prepared by RF sputtering
|
Chang, C. S.; Chang, Shoou-Jinn; Su, Yan-Kuin; Lin, Y. C.; Hsu, Y. P.; Shei, Shih-Chang; Chen, S. C.; Liu, C. H.; Liaw, U. H. |
| 國立成功大學 |
2003-06 |
InGaN/GaN light-emitting diodes with rapidly thermal-annealed Ni/ITO p-contacts
|
Chang, Chia-Sheng; Chang, Shoou-Jinn; Su, Yan-Kuin; Chiou, Yu-Zung; Lin, Yi-Chao; Hsu, Yu-Pin; Shei, Shih-Chang; Lo, Hsin-Ming; Ke, Jung-Chin; Chen, Shih-Chih; Liu, Chun-Hsing |
| 國立成功大學 |
2005-09-20 |
InGaN/GaN MQD p-n junction photodiodes
|
Hung, Shang-Chao; Huang, C. H.; Shen, D. S.; Ji, Liang-Wen; Chang, Shoou-Jinn; Su, Yan-Kuin |
| 國立成功大學 |
2004-08-25 |
InGaN/GaN MQW blue LEDs with GaN/SiN double buffer layers
|
Liu, C. H.; Chuang, R. W.; Chang, Shoou-Jinn; Su, Yan-Kuin; Kuo, C. H.; Tsai, J. M.; Lin, C. C. |
| 元智大學 |
2007-05 |
InGaN/GaN MQW Nanorods LED Fabricated by ICP-RIE and PEC Oxidation Processes
|
賴芳儀; H. W. Huang; Ching-Hua Chiu; C. F. Lai; T.C. Lu; H. C. Kuo; S. C. Wang |
| 國立交通大學 |
2019-04-02T06:04:49Z |
InGaN/GaN MQW Nanorods LED Fabricated by ICP-RIE and PEC Oxidation Processes
|
Lai, Fang-, I; Huang, H. W.; Chiu, Ching-Hua; Lai, C. F.; Lu, T. C.; Ku, H. C.; Wang, S. C. |
| 南台科技大學 |
2002 |
InGaN/GaN MQW P-N junction photodetectors
|
Y. Z. Chiou; Y. K. Su;S. J. Chang;Y. C. Lin, C. S. Chang; C. H. Chen |
| 國立成功大學 |
2002-12 |
InGaN/GaN MQW p-n junction photodetectors
|
Chiou, Yu-Zung; Su, Yan-Kuin; Chang, Shoou-Jinn; Lin, Yi-Chao; Chang, Chia-Sheng; Chen, Chin-Hsiang |
| 臺大學術典藏 |
2014 |
InGaN/GaN MQW Photoluminescence Enhancement by Localized Surface Plasmon Resonance on Isolated Ag Nanoparticles
|
Dobrovolskas, D.; Mickevi?ius, J.; Nargelas, S.; Chen, H.S.; Tu, C.G.; Liao, C.-H.; Hsieh, C.; Su, C.Y.; Tamulaitis, G.; Yang, C.C.; CHIH-CHUNG YANG; Dobrovolskas, D.;Mickevi?ius, J.;Nargelas, S.;Chen, H.S.;Tu, C.G.;Liao, C.-H.;Hsieh, C.;Su, C.Y.;Tamulaitis, G.;Yang, C.C. |
| 國立成功大學 |
2007-01 |
InGaN/GaN MQW structures prepared with various In and Ga flow rates
|
Lai, Wei-Chi; Lam, K. T.; Liu, C. H.; Chang, Shoou-Jinn |
| 國立成功大學 |
2004-03-01 |
InGaN/GaN multi-quantum dot light-emitting diodes
|
Ji, L. W.; Su, Yan-Kuin; Chang, S. T.; Chang, C. S.; Wu, L. W.; Lai, W. C.; Du, X. L.; Chen, H. |
| 國立成功大學 |
2004-04 |
InGaN/GaN multi-quantum well metal-insulator semiconductor photodetectors with photo-CVD SiO2 layers
|
Chang, Ping-Chuan; Chen, Chin-Hsiang; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, Po-Chang; Jhou, Yi-De; Liu, Chun-Hsing; Hung, Hung; Wang, Shih-Ming |
| 國立成功大學 |
2007-10-01 |
InGaN/GaN multi-quantum-well ultraviolet photosensors by capping an unactivated Mg-doped GaN layer
|
Chang, Ping-Chuan; Yu, Chia-Lin |
| 國立成功大學 |
2003-05 |
InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping
|
Wen, Ten-Chin; Chang, Shoou-Jinn; Su, Yan-Kuin; Wu, L. W.; Kuo, C. H.; Lai, W. C.; Sheu, Jinn-Kong; Tsai, T. Y. |
| 國立成功大學 |
2008 |
InGaN/GaN multiple-quantum-well LEDs with Si-doped barriers
|
Hung, H.; Lam, K. T.; Chang, Shoou-Jinn; Chen, C. H.; Kuan, H.; Sun, Y. X. |
Showing items 503076-503100 of 2303212 (92129 Page(s) Totally)
<< < 20119 20120 20121 20122 20123 20124 20125 20126 20127 20128 > >>
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