| 國立臺灣海洋大學 |
2010-07-26 |
InGaP/GaAs superlattice-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure
|
Jung-Hui Tsai; Der-Feng Guo; Yuan-Hong Lee; Ning-Feng Dale; Wen-Shiung Lour |
| 國立臺灣海洋大學 |
2011-05 |
InGaP/GaAs superlattice-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure
|
Wen-Shiung Lour; Ning-Feng Dale; Yuan-Hong Lee; Der-Feng Guo; Jung-Hui Tsai |
| 國立高雄師範大學 |
1997 |
InGaP/GaAs Superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)
|
Jung-Hui Tsai;Wen-Chau Liu;Shiou-Ying Cheng;Po-Hung Lin;Jing-Yuh Chen;Wei-Chou Wang; 蔡榮輝 |
| 國立成功大學 |
2013-12 |
InGaP/GaAs/Ge triple-junction solar cells with ZnO nanowires
|
Hou, Jei-Li; Chang, Shoou-Jinn; Hsueh, Ting-Jen; Wu, Chih-Hung; Weng, Wen-Yin; Shieh, Jia-Min |
| 元智大學 |
2011 |
InGaP/GaAs/Ge三接面串接式太陽能電池優化及製作
|
鄭勇釗; Yung-Chao Cheng |
| 國立成功大學 |
2009-05-21 |
InGaP/GaAs/InGaAs delta-doped p-channel field-effect transistor with p(+)/n(+)/p camel-like gate structure
|
Tsai, Jung-Hui; Lour, W. S.; Liu, Wen-Chau |
| 國立高雄師範大學 |
2010 |
InGaP/GaAs/InGaAs doped-Channel field-Effect transistor using camel-Like gate structure
|
Jung-Hui Tsai;Der-Feng Guo;Yuan-Hong Lee;Ying-Feng Da;Wen-Shiung Lour; 蔡榮輝 |
| 國立臺灣海洋大學 |
2010-07-26 |
InGaP/GaAs/InGaAs doped-channel field-effect transistor using camel-like gate structure
|
Jung-Hui Tsai; Der-Feng Guo; Yuan-Hong Lee; Ning-Feng Dale; Wen-Shiung Lour |
| 國立臺灣海洋大學 |
2009 |
InGaP/GaAs/InGaAs δ-doped p-channel field-effect transistor with p +/n +/p camel-like gate structure
|
J.-H. Tsai; W.-S. Lour; W.-C. Liu |
| 國立高雄師範大學 |
2009 |
InGaP/GaAs/InGaAs δ-doped p-channel field-effect transistor with p+/n+/p camel-like gate structure
|
Jung-Hui Tsai;Wen-Shiung Lour;Wen-Chau Liu; 蔡榮輝 |
| 臺大學術典藏 |
2018-09-10T09:24:39Z |
InGaP/GaAs0.57P0.28Sb0.15/GaAs double HBT with weakly type-II base/collector junction
|
Y. C. Chin,;H. H. Lin,;C. H. Huang,;M. N. Tseng,; Y. C. Chin,; H. H. Lin,; C. H. Huang,; M. N. Tseng,; HAO-HSIUNG LIN |
| 國立彰化師範大學 |
2009 |
InGaP/GaAs雙接面與InGaP/GaAs/InGaAs三接面串接式太陽能電池之模擬與分析
|
張仕添 |
| 國立交通大學 |
2014-12-12T02:11:10Z |
InGaP/InGaAlP可見光雷射二極體之包裝結構與熱阻量測
|
傅光正; FU, GUANG-ZHENG; 戴國仇 |
| 國立高雄師範大學 |
2010 |
InGaP/InGaAs doped-channel direct-coupled field-effect transistors logic with low supply voltage
|
Jung-Hui Tsai;Wen-Shiung Lour;Tzu-Yen Weng;Chien-Ming Li; 蔡榮輝 |
| 國立臺灣海洋大學 |
2010-03-05 |
InGaP/InGaAs doped-channel direct-coupled field-effect transistors logic with low supply voltage
|
Jung-Hui Tsai; Wen-Shiung Lour; Tzu-Yen Weng; Chien-Ming Li |
| 國立高雄師範大學 |
2009 |
InGaP/InGaAs doped-channel heterostructure field-effect transistors s for complementary logic inverter application
|
Jung-Hui Tsai;Wen-Shiung Lour;Der-Feng Guo;Chien-Ming Li;Yuan-Hong Lee; 蔡榮輝 |
| 國立成功大學 |
2003-06-26 |
InGaP/InGaAs double delta-doped channel transistor
|
Chuang, Hung-Ming; Cheng, S .Y.; Liao, X. D.; Chen, C. Y.; Liu, Wen-Chau |
| 臺大學術典藏 |
2018-09-10T03:51:07Z |
InGaP/InGaAs dual gate pseudomorphic high electron mobility transistors
|
W.-S. Lour; M.-K. Tsai; K.-C. Chen; Y.-W. Wu; S.-W. Tan; Y. J. Yang; YING-JAY YANG |
| 義守大學 |
2004 |
InGaP/InGaAs dual-channel transistor
|
Chuang H.-M.; Uang C.-M.; Cheng S.-Y.; Chen C.-Y.; Lai P.-H.; Kao C.-I.; Tsai Y.-Y.; Hsu W.-H.; Liu W.-C. |
| 國立成功大學 |
2005-12 |
InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid-phase-oxidized InGaP as gate dielectric
|
Lee, Kuan-Wei; Wang, Yeong-Her; Houng, Mau-Phon; Yang, Nan-Ying; Lin, Yu-Ju; Sze, Po-Wen |
| 義守大學 |
2007 |
InGaP/InGaAs MOS-PHEMT with a liquid phase oxidized InGaP gate insulator
|
Hsien-Chang Lin;Kuan-Wei Lee;Chao-Hsien Tu;Po-Wen Sze;Yeong-Her Wang; |
| 義守大學 |
2012-02 |
InGaP/InGaAs MOS-PHEMT with a nanoscale liquid phase-oxidized InGaP dielectric
|
Hsien-Cheng Lin;Fang-Ming Lee;Yu-Chun Cheng;Kuan-Wei Lee;Feri Adriyanto;Yeong-Her Wang |
| 國立成功大學 |
2012-02 |
InGaP/InGaAs MOS-PHEMT with a nanoscale liquid phase-oxidized InGaP dielectric
|
Lin, Hsien-Cheng; Lee, Fang-Ming; Cheng, Yu-Chun; Lee, Kuan-Wei; Adriyanto, Feri; Wang, Yeong-Her |
| 國立交通大學 |
2014-12-08T15:38:58Z |
InGaP/InGaAs PHEMT with high IP3 for low noise applications
|
Lin, YC; Chang, EY; Chen, GJ; Lee, HM; Huang, GW; Biswas, D; Chang, CY |
| 國立臺灣海洋大學 |
2006-12 |
InGaP/InGaAs Pseudomorphic Heterodoped-Channel FETs With a Field Plate and a Reduced Gate Length by Splitting Gate Metal
|
H. R. Chen;M. K. Hsu;S. Y. Chiu;W. T. Chen;G. H. Chen;Y. C. Chang;W. S. Lour |
